Antenna and wireless device

US12027769B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12027769-B2
Application numberUS-202217722811-A
CountryUS
Kind codeB2
Filing dateApr 18, 2022
Priority dateApr 19, 2021
Publication dateJul 2, 2024
Grant dateJul 2, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An antenna has a reflector and an active element. The reflector includes a multi-segment metal structure having a length within a first value range. The multi-segment metal structure includes a first metal structure connected to a second metal structure. A PIN diode is disposed on the first metal structure. The first metal structure is parallel to a polarization direction of the active element. The second metal structure is perpendicular to the first metal structure.

First claim

Opening claim text (preview).

What is claimed is: 1. An antenna comprising: an active element located at a center of a circumference of the antenna; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors comprises a multi-segment metal structure and a diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure is parallel to a polarization direction of the active element, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure, and wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 2. The antenna of claim 1 , wherein the third metal structure is parallel to the first metal structure. 3. The antenna of claim 1 , wherein a distance between the reflector and the active element is within a first value range, wherein the first value range depends on a wavelength corresponding to an operating frequency band of the reflector. 4. The antenna of claim 1 , wherein the diode is a p-type, intrinsic, and n-type (PIN) diode configured to control the reflector to be in an operating state or an off state. 5. The antenna of claim 4 , wherein a first end and a second end of the PIN diode are connected to an inductor in parallel, wherein the inductor comprises a distributed inductor and a DC blocking capacitor, and wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor. 6. The antenna of claim 5 , further comprising a resonant circuit comprising the PIN diode and the distributed inductor, wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 7. The antenna of claim 5 , wherein a length of the distributed inductor is within a third value range, wherein the third value range depends on a wavelength corresponding to an operating frequency band of the reflector. 8. The antenna of claim 5 , wherein the distributed inductor is a rectangular distributed inductor. 9. The antenna of claim 5 , wherein the multi-segment metal structure has a length within a first value range, wherein the first value range is 0.225 to 0.275 times a wavelength corresponding to an operating frequency band of the reflector. 10. An antenna comprising: an active element located at a center of a circumference of the antenna; an inductor comprising a distributed inductor and a DC blocking capacitor, wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors comprises a multi-segment metal structure and a p-type, intrinsic, and n-type (PIN) diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure extends vertically from a horizontal plane, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, and wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure. 11. The antenna of claim 10 , further comprising a resonant circuit comprising the PIN diode and the distributed inductor, wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 12. The antenna of claim 10 , wherein the PIN diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 13. The antenna of claim 12 , wherein a length of the distributed inductor is within a first value range of 0.05 to 0.5 times an operating wavelength of the reflector. 14. The antenna of claim 12 , wherein a distance between the reflector and the active element is within a second value range, wherein the second value range depends on a wavelength corresponding to an operating frequency band of the reflector. 15. A wireless device comprising: a radio frequency circuit; a switch circuit; and an antenna comprising: an active element located at a center of a circumference of the antenna; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors is connected to the switch circuit and comprises a multi-segment metal structure and a diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure is parallel to a polarization direction of the active element, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure, and wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 16. A wireless device comprising: a radio frequency circuit; a switch circuit; and an antenna comprising: an active element located at a center of a circumference of the antenna and connected to the radio frequency circuit; an inductor comprising a distributed inductor and a DC blocking capacitor, wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors is connected to the switch circuit and comprises a multi-segment metal structure and a p-type, intrinsic, and n-type (PIN) diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure extends vertically from a horizontal plane, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, and wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure. 17. The wireless device of claim 16 , wherein the antenna further comprises a resonant circuit comprising the PIN diode and the distributed inductor, and wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 18. The wireless device of claim 17 , wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 19. The antenna of claim 10 , w

Assignees

Inventors

Classifications

  • using a diode or a gas filled discharge tube · CPC title

  • the primary active element being end-fed and elongated · CPC title

  • used in Bluetooth® or Wi-Fi® devices of Wireless Local Area Networks [WLAN] (H01Q1/241 takes precedence; WLAN in general H04W) · CPC title

  • Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) · CPC title

  • using reflecting surfaces · CPC title

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What does patent US12027769B2 cover?
An antenna has a reflector and an active element. The reflector includes a multi-segment metal structure having a length within a first value range. The multi-segment metal structure includes a first metal structure connected to a second metal structure. A PIN diode is disposed on the first metal structure. The first metal structure is parallel to a polarization direction of the active element.…
Who is the assignee on this patent?
Huawei Tech Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01Q19/106. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 02 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).