Switchable dual band antenna array with three orthogonal polarizations
US-10270185-B2 · Apr 23, 2019 · US
US12027769B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12027769-B2 |
| Application number | US-202217722811-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 18, 2022 |
| Priority date | Apr 19, 2021 |
| Publication date | Jul 2, 2024 |
| Grant date | Jul 2, 2024 |
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An antenna has a reflector and an active element. The reflector includes a multi-segment metal structure having a length within a first value range. The multi-segment metal structure includes a first metal structure connected to a second metal structure. A PIN diode is disposed on the first metal structure. The first metal structure is parallel to a polarization direction of the active element. The second metal structure is perpendicular to the first metal structure.
Opening claim text (preview).
What is claimed is: 1. An antenna comprising: an active element located at a center of a circumference of the antenna; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors comprises a multi-segment metal structure and a diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure is parallel to a polarization direction of the active element, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure, and wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 2. The antenna of claim 1 , wherein the third metal structure is parallel to the first metal structure. 3. The antenna of claim 1 , wherein a distance between the reflector and the active element is within a first value range, wherein the first value range depends on a wavelength corresponding to an operating frequency band of the reflector. 4. The antenna of claim 1 , wherein the diode is a p-type, intrinsic, and n-type (PIN) diode configured to control the reflector to be in an operating state or an off state. 5. The antenna of claim 4 , wherein a first end and a second end of the PIN diode are connected to an inductor in parallel, wherein the inductor comprises a distributed inductor and a DC blocking capacitor, and wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor. 6. The antenna of claim 5 , further comprising a resonant circuit comprising the PIN diode and the distributed inductor, wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 7. The antenna of claim 5 , wherein a length of the distributed inductor is within a third value range, wherein the third value range depends on a wavelength corresponding to an operating frequency band of the reflector. 8. The antenna of claim 5 , wherein the distributed inductor is a rectangular distributed inductor. 9. The antenna of claim 5 , wherein the multi-segment metal structure has a length within a first value range, wherein the first value range is 0.225 to 0.275 times a wavelength corresponding to an operating frequency band of the reflector. 10. An antenna comprising: an active element located at a center of a circumference of the antenna; an inductor comprising a distributed inductor and a DC blocking capacitor, wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors comprises a multi-segment metal structure and a p-type, intrinsic, and n-type (PIN) diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure extends vertically from a horizontal plane, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, and wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure. 11. The antenna of claim 10 , further comprising a resonant circuit comprising the PIN diode and the distributed inductor, wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 12. The antenna of claim 10 , wherein the PIN diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 13. The antenna of claim 12 , wherein a length of the distributed inductor is within a first value range of 0.05 to 0.5 times an operating wavelength of the reflector. 14. The antenna of claim 12 , wherein a distance between the reflector and the active element is within a second value range, wherein the second value range depends on a wavelength corresponding to an operating frequency band of the reflector. 15. A wireless device comprising: a radio frequency circuit; a switch circuit; and an antenna comprising: an active element located at a center of a circumference of the antenna; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors is connected to the switch circuit and comprises a multi-segment metal structure and a diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure is parallel to a polarization direction of the active element, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure, and wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 16. A wireless device comprising: a radio frequency circuit; a switch circuit; and an antenna comprising: an active element located at a center of a circumference of the antenna and connected to the radio frequency circuit; an inductor comprising a distributed inductor and a DC blocking capacitor, wherein the DC blocking capacitor comprises a distributed capacitor or a lumped capacitor; and a plurality of reflectors evenly disposed on the circumference, wherein a reflector in the plurality of reflectors is connected to the switch circuit and comprises a multi-segment metal structure and a p-type, intrinsic, and n-type (PIN) diode, wherein the multi-segment metal structure comprises a first metal structure, a second metal structure, and a third metal structure, wherein the first metal structure extends vertically from a horizontal plane, wherein the second metal structure is connected at a first end to a top of the first metal structure and is perpendicular to the first metal structure, wherein the second metal structure extends in a direction away from the active element, and wherein the third metal structure is connected to a second end of the second metal structure and extends vertically from the second metal structure. 17. The wireless device of claim 16 , wherein the antenna further comprises a resonant circuit comprising the PIN diode and the distributed inductor, and wherein a resonant frequency of the resonant circuit is within an operating frequency band of the active element. 18. The wireless device of claim 17 , wherein the diode is disposed on the first metal structure between a first portion of the first metal structure and a second portion of the first metal structure. 19. The antenna of claim 10 , w
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