Low power management for sleep mode operation of a memory device

US12027227B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12027227-B2
Application numberUS-202017426963-A
CountryUS
Kind codeB2
Filing dateDec 22, 2020
Priority dateDec 22, 2020
Publication dateJul 2, 2024
Grant dateJul 2, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A determination is made that a memory device of a memory sub-system is to be transitioned to a sleep mode. A command is initiated to cause a standby circuit associated with the memory device to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state. In the low power mode, a reference voltage is supplied to a voltage regulator of the standby circuit to supply a standby current level to the memory device during the sleep mode.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: determining, by a processing device of a controller of a memory sub-system, that a memory device of a memory sub-system is to be transitioned from an active mode to a sleep mode; initiating a command to cause a standby circuit associated with the memory device to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state; and in the low power mode, causing a reference voltage to be supplied to a voltage regulator, wherein the reference voltage causes the voltage regulator to supply a standby current level to the memory device during the sleep mode, wherein the standby current level is lower than a current level supplied when the memory device is in the active mode. 2. The method of claim 1 , wherein the voltage regulator generates an output voltage that is limited based on the reference voltage. 3. The method of claim 1 , wherein the standby current level is limited based on the reference voltage. 4. The method of claim 1 , further comprising: in the low power mode, disabling supplying an output of a bandgap circuit of the standby circuit to the voltage regulator. 5. The method of claim 1 , further comprising initiating an exit from the low power mode to transition the memory device from the sleep mode to an active mode. 6. The method of claim 5 , wherein the power supply is in the powered state during transition of the memory device from the sleep mode to the active mode. 7. The method of claim 1 , wherein determining the memory device is to be transitioned to the sleep mode further comprises: determining a workload queue associated with the memory device is empty; and determining the memory device is in an idle mode. 8. A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising: determining that a memory device of a memory sub-system is to be transitioned from an active mode to a sleep mode; initiating a command to cause a standby circuit associated with the memory device to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state; and in the low power mode, causing a reference voltage to be supplied to a voltage regulator, wherein the reference voltage causes the voltage regulator to supply a standby current level to the memory device during the sleep mode, wherein the standby current level is lower than a current level supplied when the memory device is in the active mode. 9. The non-transitory computer readable medium of claim 8 , wherein a first power supply of the memory sub-system is powered on during operation the sleep mode. 10. The non-transitory computer readable medium of claim 9 , wherein the memory sub-system further comprises a second power supply that is powered on during operation in the sleep mode. 11. The non-transitory computer readable medium of claim 9 , wherein the memory sub-system further comprises a second power supply, and wherein the low power mode is entered following a powering down of the second power supply. 12. The non-transitory computer readable medium of claim 11 , wherein the low power mode is exited following a powering up of the second power supply. 13. The non-transitory computer readable medium of claim 8 , the operations further comprising in the low power mode, disabling supplying an output of a bandgap circuit of the standby circuit to the voltage regulator. 14. A memory sub-system comprising: a memory device comprising a standby circuit comprising a voltage regulator operatively coupled to one or more memory cells of the memory device; and control logic, operatively coupled with the standby circuit, to perform operations comprising: determining that the memory device is to be transitioned from an active mode to a sleep mode; initiating a command to cause the standby circuit to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state; and in the low power mode, causing a reference voltage to be supplied to a voltage regulator, wherein the reference voltage causes the voltage regulator to supply a standby current level to the memory device during the sleep mode, wherein the standby current level is lower than a current level supplied when the memory device is in the active mode. 15. The memory sub-system of claim 14 , wherein the voltage regulator generates an output voltage that is limited based on the reference voltage. 16. The memory sub-system of claim 14 , wherein the standby current level is limited based on the reference voltage. 17. The memory sub-system of claim 14 , the operations further comprising, in the low power mode, disabling supplying an output of a bandgap circuit of the standby circuit to the voltage regulator. 18. The memory sub-system of claim 14 , the operations further comprising initiating an exit from the low power mode to transition the memory device from the sleep mode to the active mode. 19. The memory sub-system of claim 18 , wherein the power supply is in the powered state during the transition of the memory device from the sleep mode to the active mode. 20. The memory sub-system of claim 14 , wherein determining the memory device is to be transitioned to the sleep mode further comprises: determining a workload queue associated with the memory device is empty; and determining the memory device is in an idle mode.

Assignees

Inventors

Classifications

  • Power supply circuits · CPC title

  • Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

  • Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction · CPC title

  • Power supply circuits · CPC title

  • G11C5/147Primary

    Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops (G11C5/141 takes precedence) · CPC title

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What does patent US12027227B2 cover?
A determination is made that a memory device of a memory sub-system is to be transitioned to a sleep mode. A command is initiated to cause a standby circuit associated with the memory device to enter into a low power mode while a power supply of the memory sub-system is maintained in a powered state. In the low power mode, a reference voltage is supplied to a voltage regulator of the standby ci…
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification G11C5/147. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 02 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).