Magnetoresistive devices and methods therefor

Patent metadata

Field	Value
Publication number	US-12022741-B2
Application number	US-201917285364-A
Country	US
Kind code	B2
Filing date	Oct 17, 2019
Priority date	Oct 18, 2018
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks—for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device—of the present disclosure include one or more multilayer synthetic antiferromagnetic structures—SAFs—or synthetic ferromagnetic structures—SyFs—(A) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs ( 200 ).

First claim

What is claimed is:

1. A magnetic tunnel junction (MTJ) bit, comprising:
a synthetic antiferromagnetic (SAF) fixed region including:
a plurality of anti-parallel regions; and
a plurality of coupling regions, wherein each coupling region is disposed between two of the plurality of anti-parallel regions, and wherein a height of the SAF fixed region is greater than or equal to a width of the SAF fixed region,
wherein the SAF fixed region comprises at least four anti-parallel regions.

2. The MTJ bit of claim 1 , wherein the height of the SAF fixed region is greater than approximately 10 nm.

3. The MTJ bit of claim 1 , wherein the height of the SAF fixed region is between approximately 20 nm and approximately 40 nm.

4. The MTJ bit of claim 1 , further comprising:
a free region, wherein a height of the free region is approximately equal to the height of the SAF fixed region.

5. The MTJ bit of claim 1 , wherein the height of the SAF fixed region is between 1 and 3 times greater than the width of the SAF fixed region.

6. The MTJ bit of claim 1 , wherein the SAF fixed region is a first SAF fixed region, and further comprising:
a second SAF fixed region including:
two anti-parallel regions; and
a coupling region disposed between the anti-parallel regions; and

a free region, wherein the first SAF fixed region and the second SAF fixed region are disposed on opposite sides of the free region.

7. The MTJ bit of claim 1 , wherein each coupling region includes one of iridium, ruthenium, rhenium, or rhodium.

8. A magnetic tunnel junction (MTJ) bit, comprising:
a synthetic antiferromagnetic (SAF) fixed region including:
a plurality of anti-parallel regions, wherein each anti-parallel region comprises a plurality of layers of a first ferromagnetic material and a second ferromagnetic material; and
a plurality of coupling regions,
wherein each coupling region is disposed between two of the plurality of anti-parallel regions,
wherein the SAF fixed region comprises at least four anti-parallel regions.

9. The MTJ bit of claim 8 , wherein each of the first ferromagnetic material and the second ferromagnetic material comprises at least one of cobalt, nickel and iron.

10. The MTJ bit of claim 8 , wherein each anti-parallel region further comprises an alloy or engineered material including one or more of palladium, platinum, magnesium, manganese, and chromium.

11. The MTJ bit of claim 8 , wherein a width of the MTJ bit is between approximately 10 nm and approximately 30 nm.

12. A magnetic tunnel junction (MTJ) bit, comprising:
a synthetic antiferromagnetic (SAF) fixed region including:
a plurality of anti-parallel regions; and
a plurality of coupling regions, wherein each coupling region is disposed between two of the plurality of anti-parallel regions;

a free region, including:
a plurality of ferromagnetic regions; and
a plurality of coupling regions, wherein each coupling region is disposed between two of the plurality of ferromagnetic regions; and

an intermediate region disposed between the SAF fixed region and the free region,
wherein a height of the SAF fixed region is greater than or equal to a width of the SAF fixed region, and a height of the free region is greater than or equal to a width of the free region.

13. The MTJ bit of claim 12 , wherein the free region includes both synthetic antiferromagnetic coupling regions and synthetic ferromagnetic coupling regions.

14. The MTJ bit of claim 13 , wherein the free region includes exactly one synthetic antiferromagnetic coupling region.

15. The MTJ bit of claim 13 , wherein the free region includes no more than two synthetic ferromagnetic coupling regions.

16. The MTJ bit of claim 12 , wherein the free region includes both synthetic antiferromagnetic coupling regions and synthetic ferromagnetic coupling regions in an alternating configuration.

17. The MTJ bit of claim 12 , wherein each of the plurality of coupling regions in the free region includes one of aluminum, magnesium, tantalum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tungsten, iridium, ruthenium, palladium, rhenium, rhodium, osmium, platinum, or an alloy thereof.

18. The MTJ bit of claim 12 , wherein the height of the free region is approximately equal to the height of the SAF fixed region.

Assignees

• Everspin Technologies Inc

Inventors

• Sun Jijun

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10B61/20

  comprising components having three or more electrodes, e.g. transistors · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title