Methods for preparing AlN based template having Si substrate and GaN based epitaxial structure having Si substrate

Patent metadata

Field	Value
Publication number	US-12020925-B2
Application number	US-202117275774-A
Country	US
Kind code	B2
Filing date	Feb 8, 2021
Priority date	Apr 30, 2020
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

First claim

What is claimed is:

1. A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising:
providing the Si substrate;
growing an AlN nucleation layer on the Si substrate;
introducing an ion passing through the AlN nucleation layer and into the Si substrate; and
introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate;
wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (μm) to 1500 μm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.

2. The method for preparing the AlN based template having the Si substrate according to claim 1 , wherein growing an AlN nucleation layer on the Si substrate comprises:
growing the AlN nucleation layer on the Si substrate using one of a molecular beam epitaxy (MBE) method, a metal-organic chemical vapor deposition (MOCVD) method, a hydride vapor phase epitaxy (HVPE) method or a physical vapor deposition (PVD) method.

3. The method for preparing the AlN based template having the Si substrate according to claim 1 , wherein introducing an ion passing through the AlN nucleation layer and into the Si substrate, and introducing another ion into the AlN nucleation layer, respectively comprise:
introducing the ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the another ion into the AlN nucleation layer using an ion implantation method.

4. The method for preparing the AlN based template having the Si substrate according to claim 3 , wherein a dose of ion for introducing the ion passing through the AlN nucleation layer and into the Si substrate is in a range from 1×10 10 cm −2 to 1×10 16 cm −2 , and an energy of ion for introducing the ion passing through the AlN nucleation layer and into the Si substrate is in a range from 10 KeV to 100 KeV.

5. The method for preparing the AlN based template having the Si substrate according to claim 3 , wherein the ion introduced into the Si substrate comprises one or more ions selected from the group consisting of argon (Ar), nitrogen (N), hydrogen (H), oxygen (O), fluorine (F), arsenic (As) and phosphorus (P); and the another ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Ar, N, iron (Fe), carbon (C), F and magnesium (Mg).

6. A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising:
preparing an AlN based template having the Si substrate;
growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate;
growing a GaN buffer layer on the group III nitride transition layer; and
growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer;
wherein preparing an AlN based template having the Si substrate comprises:
providing the Si substrate;
growing an AlN nucleation layer on the Si substrate;
introducing a first ion passing through the AlN nucleation layer and into the Si substrate; and
introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate;

wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 μm to 1500 μm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.

7. The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6 , wherein growing an AlN nucleation layer on the Si substrate comprises:
growing the AlN nucleation layer on the Si substrate using one of an MBE method, an MOCVD method, an HVPE method, or a PVD method.

8. The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6 , wherein introducing a first ion passing through the AlN nucleation layer and into the Si substrate, and introducing a second ion into the AlN nucleation layer, respectively comprises:
introducing the first ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the second ion into the AlN nucleation layer using an ion implantation method.

9. The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 8 , wherein a dose of ion for introducing the first ion is in a range from 1×10 10 cm− 2 to 1×10 16 cm−2, an energy of ion for introducing the first ion is in a range from 10 KeV to 100 KeV.

10. The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 8 , wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, O, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Ar, N, Fe, C, F and Mg.

11. A method for preparing a AlN based template having a Si substrate, comprising:
step 1 , providing the Si substrate;
step 2 , growing an AlN nucleation layer on the Si substrate;
step 3 , introducing a first ion passing through the AlN nucleation layer and into the Si substrate;
step 4 , introducing a second ion into the AlN nucleation layer, before or after the step 3 ; and
step 5 , changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3 , or after the step 4 and before the step 3 when the step 4 is before the step 3 , so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.

12. The method for preparing the AlN based template having the Si substrate according to claim 11 , wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Fe, C and Mg.

Assignees

• Univ Xidian

Inventors

• Liu Zhihong
• Liu Junwei
• Zhang Jincheng
• Hao Lu
• Song Kunlu
• Zhou Hong
• Zhao Shenglei
• Zhang Yachao
• Zhang Weihang
• Hao Yue

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3216 Primary

  Nitrides · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title