Semiconductor device

Patent metadata

Field	Value
Publication number	US-12015058-B2
Application number	US-202318333562-A
Country	US
Kind code	B2
Filing date	Jun 13, 2023
Priority date	Nov 16, 2018
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.

First claim

What is claimed is:

1. A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein
the semiconductor substrate includes a hydrogen containing region including hydrogen,
the hydrogen containing region has one or more hydrogen chemical concentration peaks in a depth direction,
a carrier concentration distribution in the depth direction of the hydrogen containing region includes:
a first carrier concentration peak;
a second carrier concentration peak that is closest to the first carrier concentration peak, among carrier peaks arranged closer to the upper surface than the first carrier concentration peak;
a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak;
a first inter peak region arranged between the first carrier concentration peak and the second carrier concentration peak;
a second inter peak region arranged between the second carrier concentration peak and the third carrier concentration peak; and
an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap each of the hydrogen chemical concentration peaks in the second carrier concentration peak and the third carrier concentration peak; and

a local minimum value of a carrier concentration in the first inter peak region is smaller than a local minimum value of a carrier concentration in the second inter peak region.

2. The semiconductor device of claim 1 , wherein
the hydrogen containing region includes a lifetime control region including an adjustment impurity for adjusting a lifetime of a carrier, and
a concentration distribution of the adjustment impurity in the depth direction has an impurity concentration peak arranged in the first inter peak region.

3. The semiconductor device of claim 2 , wherein a full width at half maximum of the impurity concentration peak is greater than a width of the second inter peak region, in the depth direction.

4. The semiconductor device of claim 1 , wherein a local minimum value of a carrier concentration in the first inter peak region is smaller than a base doping concentration in the semiconductor substrate.

5. The semiconductor device of claim 1 , wherein the inter-peaks concentration peak is a peak more gently sloped than any of the second carrier concentration peak and the third carrier concentration peak.

6. The semiconductor device of claim 1 , wherein a width of the inter-peaks concentration peak is greater than any width of the second carrier concentration peak and the third carrier concentration peak.

7. The semiconductor device of claim 6 , wherein each width of the inter-peaks concentration peak, the second carrier concentration peak and the third carrier concentration peak is defined as a full width at half maximum in their corresponding concentration peaks.

8. The semiconductor device of claim 6 , wherein each width of the inter-peaks concentration peak, the second carrier concentration peak and the third carrier concentration peak is a width of a region with a concentration being 80% or more of a local maximum value in their corresponding concentration peaks.

9. The semiconductor device of claim 1 , wherein a local maximum value of the inter-peaks concentration peak is smaller than at lease one of a local maximum value of the second carrier concentration peak or a local maximum value of the third carrier concentration peak.

10. The semiconductor device of claim 1 , wherein a local maximum value of the inter-peaks concentration peak is larger than at lease one of a local maximum value of the second carrier concentration peak or a local maximum value of the third carrier concentration peak.

11. The semiconductor device of claim 1 , wherein the inter-peaks concentration peak does not overlap any of the one or more hydrogen chemical concentration peaks.

12. The semiconductor device of claim 2 , wherein
a width between two vacancy defect concentration positions with a concentration being 10% of a peak concentration of a vacancy defect concentration distribution in the lifetime control region in the depth direction is shorter than a width of the second inter peak region.

13. The semiconductor device according to the claim 1 , wherein the second peak of the carrier concentration distribution does not correspond with any of the plurality of hydrogen peaks.

14. The semiconductor device according to the claim 1 , wherein
the second peak in the buffer region has a full width at half maximum greater than a full width at half maximum of any of the plurality of first peaks.

15. A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein
the semiconductor substrate includes a hydrogen containing region including hydrogen,
a hydrogen chemical concentration distribution in a depth direction of the hydrogen containing region includes:
a first hydrogen chemical concentration peak;
a second hydrogen chemical concentration peak that is closest to the first hydrogen chemical concentration peak, among hydrogen chemical concentration peaks arranged closer to the upper surface than the first hydrogen chemical concentration peak;
a third hydrogen chemical concentration peak arranged closer to the upper surface than the second hydrogen chemical concentration peak;
a first inter peak region arranged between the first hydrogen chemical concentration peak and the second hydrogen chemical concentration peak; and
a second inter peak region arranged between the second hydrogen chemical concentration peak and the third hydrogen chemical concentration peak; and

a carrier concentration distribution in the depth direction of the hydrogen containing region includes an inter-peaks concentration peak arranged in the second inter peak region; and
a local minimum value of a carrier concentration in the first inter peak region is smaller than a local minimum value of a carrier concentration in the second inter peak region.

16. The semiconductor device of claim 15 , wherein the third hydrogen chemical concentration peak is a hydrogen chemical concentration peak closest to the second hydrogen chemical concentration peak, among hydrogen chemical concentration peaks arranged closer to the upper surface than the second hydrogen chemical concentration peak.

17. A semiconductor device comprising a semiconductor substrate including a first main surface and a second main surface and containing a drift region of a first conductivity type, comprising:
a buffer region of the first conductivity type adjacent to the drift region at a side of the second main surface; wherein
a carrier concentration distribution in a depth direction of the buffer region has a plurality of first peaks, a carrier concentration of each of the first peaks is higher than a carrier concentration of the drift region,
a hydrogen chemical concentration distribution in the depth direction of the buffer region has a plurality of hydrogen peaks, and
at least one of the first peaks of the carrier concentration distribution in the buffer region is a second peak arranged at a depth position between two adjacent ones of the plurality of hydrogen peaks of the hydrogen chemical concentration distribution in the depth direction.

Assignees

• Fuji Electric Co Ltd

Inventors

• Kato Yoshiharu
• AJIKI Toru
• SHIRAKAWA Tohru
• Takahashi Misaki
• Mitsuzuka Kaname
• Yoshimura Takashi
• Onozawa Yuichi
• Takishita Hiroshi
• Yoshida Soichi

Classifications

• H10P30/20 Primary

  into semiconductor materials, e.g. for doping · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title