Quantum dot layer and manufacturing method thereof, quantum dot color filter, color filter substrate, display panel, and display device

Patent metadata

Field	Value
Publication number	US-12012539-B2
Application number	US-201916650912-A
Country	US
Kind code	B2
Filing date	Sep 20, 2019
Priority date	Oct 29, 2018
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

The present disclosure relates to a manufacturing method of a quantum dot layer, a quantum dot color filter, a color filter substrate, a display panel, and a display device. The manufacturing method includes: performing lyophobic treatment on a first specified region of a first transparent layer, the first transparent layer including regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, the first specified region corresponding to the region other than the first subpixel region; and preparing a lyophilic first quantum dot solution on the first transparent layer to form a first quantum dot sublayer in a region that corresponds to the first subpixel region and is not subjected to the lyophobic.

First claim

What is claimed is:

1. A manufacturing method, comprising:
performing lyophobic treatment on a first specified region of a first transparent layer, the first transparent layer comprising regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, the first specified region corresponding to the region other than the first subpixel region, and the region other than the first subpixel region comprises a second subpixel region;
preparing a lyophilic first quantum dot solution on the first transparent layer to form a first quantum dot sublayer in a region that corresponds to the first subpixel region and is not subjected to the lyophobic treatment,
forming a second transparent layer after forming the first quantum dot sublayer;
performing lyophobic treatment on a second specified region of the second transparent layer, the second specified region corresponding to a region other than the second subpixel region; and
preparing a lyophilic second quantum dot solution on the second transparent layer to form a second quantum dot sublayer in a region that corresponds to the second subpixel region and is not subjected to the lyophobic treatment.

2. The manufacturing method according to claim 1 , wherein the region other than the first subpixel region further comprises a third subpixel region, the second subpixel region being located between the first subpixel region and the third subpixel region.

3. The manufacturing method according to claim 1 , wherein the lyophobic treatment is performed using CFx plasma.

4. The manufacturing method according to claim 1 , further comprising:
performing lyophilic treatment on the first transparent layer after forming the first quantum dot sublayer and before forming the second transparent layer.

5. The manufacturing method according to claim 1 , wherein the lyophobic treatment is performed using a mask.

6. The manufacturing method according to claim 1 , wherein the first transparent layer and the second transparent layer are of the same material, comprising a photoresist material.

7. The manufacturing method according to claim 4 , wherein the lyophilic treatment is performed using O 2 plasma or N 2 plasma.

8. The manufacturing method according to claim 1 , wherein the first quantum dot solution comprises a first alcohol ether solvent, a first water-soluble ligand, and a plurality of first quantum dots, and the second quantum dot solution comprises a second alcohol ether solvent, a second water-soluble ligand, and a plurality of second quantum dots.

9. The manufacturing method according to claim 8 , wherein the first and second quantum dots are different in size but the same in material, and comprise at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgTe, GaN, GaAs, InP, or InAs.

10. The manufacturing method according to claim 6 , wherein the photoresist material comprises at least one of polymethylmethacrylate, polyester, or epoxy.

11. A quantum dot layer, comprising:
a first transparent layer comprising regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, wherein the region other than the first subpixel region comprises a second subpixel region;
a first lyophobic layer located on an upper surface of a first specified region of the first transparent layer, the first specified region corresponding to the region other than the first subpixel region, the first lyophobic layer comprising an element constituting the first transparent layer;
a first quantum dot sublayer located in a region that corresponds to the first subpixel region, on the first transparent layer;
a second transparent layer covering the first quantum dot sublayer and the first lyophobic layer;
a second lyophobic layer located on an upper surface of a second specified region of the second transparent layer, the second specified region corresponding to a region other than the second subpixel region, the second lyophobic layer comprising an element constituting the second transparent layer; and
a second quantum dot sublayer located in a region that corresponds to the second subpixel region, on the second transparent layer.

12. The quantum dot layer according to claim 11 , wherein the region other than the first subpixel region further comprises a third subpixel region, the second subpixel region located between the first subpixel region and the third subpixel region.

13. The quantum dot layer according to claim 11 , wherein:
the first lyophobic layer is a surface fluorination layer of the first transparent layer; and/or
the second lyophobic layer is a surface fluorination layer of the second transparent layer.

14. A quantum dot color filter, comprising:
a first color filter layer in a first subpixel region, comprising a first color filter sublayer and first transparent sublayers located on upper and lower sides of the first color filter sublayer;
a second color filter layer in a second subpixel region, comprising a second color filter sublayer and a second transparent sublayer located between the second color filter sublayer and a base substrate; and
a third color filter layer in a third subpixel region, comprising a third transparent sublayer, wherein:
the second subpixel region is located between the first subpixel region and the third subpixel region;
the first transparent sublayer, the second transparent sublayers, and the third transparent sublayer are of the same material, comprising a photoresist material;
the first color filter layer further comprises a lyophobic layer located on a side of a first transparent sublayer of the first transparent sublayers farther from the base substrate, away from the first color filter sublayer; and
the third color filter layer further comprises a lyophobic layer located on a side of the third transparent sublayer away from the base substrate.

15. A color filter substrate, comprising the quantum dot color filter according to claim 14 .

16. A display panel comprising the color filter substrate according to claim 15 .

17. A display device comprising the display panel according to claim 16 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• You Juanjuan
• Sun Li

Classifications

• G03F7/0955

  one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds · CPC title

• G03F7/0007

  Filters, e.g. additive colour filters; Components for display devices · CPC title

• C09K11/62

  containing gallium, indium or thallium · CPC title

• C09K11/54

  containing zinc or cadmium · CPC title

• G02F1/133514

  Colour filters · CPC title