System and method for cryogenic optoelectronic data link

Patent metadata

Field	Value
Publication number	US-12009869-B2
Application number	US-202318130083-A
Country	US
Kind code	B2
Filing date	Apr 3, 2023
Priority date	Nov 18, 2015
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.

First claim

What is claimed is:

1. An optoelectronic device, comprising:
at least one superconducting circuit configured to generate or receive an electronic signal dependent on a state of the at least one superconducting circuit; and
an optical transducer coupled to the at least one superconducting circuit, and being configured to associate a modulation state of light in a medium with the state of the at least one superconducting circuit, the optical transducer comprising a material having a tunable Fermi energy dependent on a field effect,
wherein the electronic signal has a modulation corresponding to a modulation of the light.

2. The optoelectronic device according to claim 1 , wherein the material comprises graphene, and the at least one superconducting circuit comprises a Josephson junction.

3. The optoelectronic device according to claim 1 , configured to operate at a temperature of 100 mK or below.

4. The optoelectronic device according to claim 1 , wherein the at least one superconducting circuit is configured to interface a cryogenic quantum computing system comprising at least one qubit.

5. The optoelectronic device according to claim 4 , wherein the at least one qubit comprises a portion of the material.

6. The optoelectronic device according to claim 1 , wherein the at least one superconducting circuit is configured to modulate the optical transducer.

7. The optoelectronic device according to claim 1 , wherein the optical transducer is configured to modulate the at least one superconducting circuit.

8. The optoelectronic device according to claim 1 , wherein the material has a zero band gap.

9. The optoelectronic device according to claim 1 , wherein the modulation state of the light is communicated between the material and the at least one superconducting circuit with an electrical signal having a maximum amplitude of less than 10 mV.

10. The optoelectronic device according to claim 1 , further comprising:
at least one second superconducting circuit configured to generate or receive a second electronic signal dependent on a second state of the at least one second superconducting circuit; and
a second optical transducer coupled to the at least one second superconducting circuit, and being configured to associate a modulation state of a second light in a second medium with the second state of the at least one second superconducting circuit, the second optical transducer comprising a material having a tunable Fermi energy dependent on a field effect,
wherein the second electronic signal has a modulation corresponding to a modulation of the second light, and
wherein the light and the second light have different wavelengths, to thereby transduce a wavelength division multiplexed optical signal.

11. The optoelectronic device according to claim 1 , wherein the optical transducer is configured to have a resonant optical frequency.

12. The optoelectronic device according to claim 1 , further comprising an interface between the medium and an optical fiber.

13. A method of operating an optoelectronic device, comprising:
generating or receiving an electronic signal at least one superconducting circuit; and
coupling a state of the at least one superconducting circuit with a modulation state of light in a medium with an optical transducer having a material having a Fermi energy tuned dependent on a field effect associated with the state of the at least one superconducting circuit.

14. The method according to claim 13 , wherein:
the material comprises graphene,
the at least one superconducting circuit comprises a Josephson junction, configured to operate at a temperature below 100 mK, and
the modulation state of the light is communicated between the graphene and the at least one superconducting circuit with an electrical signal having a maximum amplitude of less than 10 mV,
further comprising interfacing the Josephson junction with at least one qubit of a quantum computing device, wherein the qubit comprises graphene.

15. The method according to claim 13 , wherein the at least one superconducting circuit modulates the optical transducer by varying the electronic signal.

16. The method according to claim 13 , wherein the optical transducer modulates the at least one superconducting circuit by varying the electronic signal in dependence on the light.

17. The method according to claim 13 , further comprising:
generating or receiving a second electronic signal associated with a state of at least one second superconducting circuit;
coupling the state of the at least one second superconducting circuit with a modulation state of second light in a second medium with a second optical transducer having a second material having a Fermi energy tuned dependent on a field effect associated with the second state of the at least one second superconducting circuit, wherein the light and the second light have different wavelengths, to thereby transduce a wavelength division multiplexed optical signal; and
interfacing the wavelength division multiplexed optical signal with an optical fiber.

18. The method according to claim 13 , wherein the optical transducer comprises an optical resonator having a resonant optical frequency.

19. An optoelectronic device, comprising:
a plurality of superconducting circuits, each configured to generate a respective electronic signal dependent on a state of the respective superconducting circuit; and
a plurality of tuned transducers, each receiving a respective electronic signal from a respective superconducting circuit, each tuned transducer comprising a material having a tunable Fermi energy dependent on a field effect controlled by the respective electronic signal, the material of each respective tuned transducer being interfaced with a resonant structure to selectively interact with electromagnetic waves having a wavelength corresponding to the resonant frequency.

20. The optoelectronic device according to claim 19 , wherein:
the at least one superconducting circuit comprises a Josephson junction configured to operate at a temperature of 100 mK or below, and
each electrical signal has a maximum amplitude of less than 1 mV,
further comprising at least one qubit comprising a portion of the material.

Assignees

• Seeqc Inc
• Center For Technology Licensing At Cornell Univ
• Univ Columbia

Inventors

• Vernik Igor V
• Mukhanov Oleg A
• Kadin Alan M
• Phare Christopher T
• Lipson Michal
• Bergman Keren

Classifications

• H04B10/505

  using external modulation · CPC title

• H04B10/541

  Digital intensity or amplitude modulation · CPC title

• H04B10/5563

  Digital frequency modulation · CPC title

• H04B10/80 Primary

  Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water · CPC title