Barrier film

Patent metadata

Field	Value
Publication number	US-12006575-B2
Application number	US-201917286880-A
Country	US
Kind code	B2
Filing date	Oct 22, 2019
Priority date	Oct 26, 2018
Publication date	Jun 11, 2024
Grant date	Jun 11, 2024

Abstract

Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10−4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

First claim

The invention claimed is:

1. A barrier film, comprising:
a base layer; and
an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS,
wherein the film has a water vapor transmission rate of 5.0×10 −4 g/m 2 ·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, and
wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta 2 O 5 at a rate of 0.09 nm/s, and
wherein the second region satisfies the relationship of Si content>N content>O content.

2. The barrier film of claim 1 , further comprising a planarizing layer.

3. The barrier film according to claim 1 , wherein the first region is in a position closer to the base layer than the second region.

4. The barrier film according to claim 1 , wherein the first region satisfies the relationship: O content>Si content>N content.

5. The barrier film according to claim 4 , wherein the O content of the first region is in a range of 50 to 65 atomic %, the Si content of the first region is in a range of 35 to 45 atomic %, and the N content of the first region is in a range of 1 to 15 atomic %.

6. The barrier film according to claim 5 , wherein the first region has a ratio (a/b) of the O content (a) to the Si content (b) in a range of 1.1 to 1.9.

7. The barrier film according to claim 1 , wherein the Si content of the second region is in a range of 45 to 60 atomic %, the N content of the second region is in a range of 20 to 35 atomic %, and the O content of the second region is in a range of 10 to 30 atomic %.

8. The barrier film according to claim 7 , wherein the N content in the second region is greater than the N content in the first region.

9. The barrier film according to claim 7 , wherein the difference between the highest value of the Si content in the second region and the highest value of the O content in the first region is 15 atomic % or less.

10. The barrier film according to claim 1 , wherein the inorganic layer is obtained by plasma-treating polysilazane having a unit of Formula 1 below:

wherein, R 1 , R 2 and R 3 are each independently a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkylsilyl group, an alkylamino group or an alkoxy group.

11. The barrier film according to claim 2 , comprising the base layer, the planarizing layer, and the inorganic layer sequentially,
wherein the planarizing layer has an average surface roughness of the surface facing the inorganic layer in a range of 15 to 45 nm, and
wherein the average surface roughness means an average value for the height difference between the highest part and the lowest part in a predetermined region having roughness and the predetermined region is 10 different designated regions having an area of about 100 μm 2 of the surface of the planarizing layer.

12. The barrier film according to claim 11 , wherein the first region has a thickness of twice or more the average surface roughness of the planarizing layer.

13. An electrical or electronic element comprising the barrier film according to claim 1 .

Assignees

• Lg Chemical Ltd

Inventors

• Shin Sung Jin
• Hwang Jang Yeon
• Jeong Hee Joon
• Park Bo Ra
• Yang Hee Wang

Classifications

• H10K50/844

  Encapsulations · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C18/14

  Decomposition by irradiation, e.g. photolysis, particle radiation {or by mixed irradiation sources} · CPC title

• C23C18/1233

  Organic substrates · CPC title

• C23C18/04

  Pretreatment of the material to be coated (C23C18/06 takes precedence) · CPC title