Light-emitting device and apparatus including same

Patent metadata

Field	Value
Publication number	US-12004364-B2
Application number	US-202318218563-A
Country	US
Kind code	B2
Filing date	Jul 5, 2023
Priority date	Apr 9, 2020
Publication date	Jun 4, 2024
Grant date	Jun 4, 2024

Abstract

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m-1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m-1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an organic layer between the first electrode and the second electrode,
wherein the organic layer includes a first emission layer, a second emission layer, and a charge generating unit between the first emission layer and the second emission layer,
the charge generating unit includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer,
wherein the n-type charge generating layer includes an n-type organic compound and a metal material,
the n-type organic compound includes a phenanthrene-based compound, a phosphine oxide-based compound and/or a phenanthroline-based compound,
the metal material includes at least one metal selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal,
the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material,
the inorganic semiconductor material included in the p-type charge generating layer and the inorganic semiconductor material included in the p-type hole injection layer each independently include a halide of a transition metal, a halide of a post-transition metal, bismuth, tellurium, a halide of bismuth, a sulfide of bismuth, a selenide of bismuth, a telluride of bismuth, a telluride of a transition metal, a telluride of a post-transition metal, a sulfide of a transition metal, a sulfide of a post-transition metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof, and
the inorganic semiconductor material included in the p-type charge generating layer is substantially identical to or different from the inorganic semiconductor material included in the p-type hole injection layer.

2. The light-emitting device of claim 1 , wherein the metal material included in the n-type charge generating layer has at least one component selected from lithium (Li), sodium (Na), a Bi—Li alloy, a Bi—Na alloy, ytterbium (Yb), samarium (Sm), europium (Eu), terbium (Tb), holmium (Ho), and dysprosium (Dy).

3. The light-emitting device of claim 1 , wherein a binding energy between the n-type organic compound and the metal material included in the n-type charge generating layer is 1.25 electron volts (eV) or higher.

4. The light-emitting device of claim 1 , wherein a volume ratio of the n-type organic compound to the metal material included in the n-type charge generating layer is in a range of about 99.9:0.1 to about 80:20.

5. The light-emitting device of claim 1 , wherein the p-type charge generating layer and the p-type hole injection layer each independently further include a hole transporting organic compound.

6. The light-emitting device of claim 5 , wherein the hole transporting organic compound included in the p-type charge generating layer and the hole transporting organic compound included in the p-type hole injection layer each independently have at least one selected from a compound represented by Formula 201 and a compound represented by Formula 202:

wherein, in Formulae 201 and 202,
L 201 to L 204 are each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
L 205 is selected from *—O—*′, *—S—*′,*—N(Q 201 )-*′, a substituted or unsubstituted C 1 -C 20 alkylene group, a substituted or unsubstituted C 2 -C 20 alkenylene group, a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
xa1 to xa4 are each independently an integer from 0 to 3,
xa5 is an integer from 1 to 10, and
R 201 to R 204 and Q 201 are each independently selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group.

7. The light-emitting device of claim 5 , wherein a volume ratio of the hole transporting organic compound to the inorganic semiconductor material in the p-type charge generating layer and a volume ratio of the hole transporting organic compound to the inorganic semiconductor material in the p-type hole injection layer are each independently in a range of about 99.9:0.1 to about 80:20.

8. The light-emitting device of claim 1 , wherein the organic layer further includes a hole transport region and an electron transport region, and the electron transport region includes an inorganic insulating material.

9. The light-emitting device of claim 8 , wherein the electron transport region includes an n-type electron injection layer, and the n-type electron injection layer includes the inorganic insulating material.

10. The light-emitting device of claim 9 , wherein the n-type electron injection layer is in direct contact with the second electrode.

11. The light-emitting device of claim 8 , wherein the inorganic insulating material includes a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

12. The light-emitting device of claim 9 , wherein the n-type electron injection layer consists of the inorganic insulating material.

13. The light-emitting device of claim 9 , wherein the n-type electron injection layer further includes a metal dopant, and
the metal dopant includes at least one selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal.

14. The light-emitting device of claim 13 , wherein the metal dopant is selected from ytterbium (Yb), samarium (Sm), lithium (Li), and magnesium (Mg).

15. The light-emitting device of claim 13 , wherein a volume ratio of the inorganic insulating material to the metal dopant is in a range of about 100:0 to about 70:30.

16. An apparatus comprising:
a thin-film transistor including a source

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dongchan
• Moon Jiyoung
• Yoon Heechang
• Lee Jihye
• Lee Hakchoong
• Lee Haemyeong
• Han Myungsuk
• Yoon Jihwan
• Lee Jonghyuk
• Cho Yoonhyeung

Classifications

• H10K50/17

  Carrier injection layers · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K50/171 Primary

  Electron injection layers · CPC title

• H10K50/19 Primary

  Tandem OLEDs · CPC title

• H10K85/324

  comprising aluminium, e.g. Alq3 · CPC title