Method for producing composite wafer having oxide single-crystal film
US-2018166622-A1 · Jun 14, 2018 · US
US12003227B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12003227-B2 |
| Application number | US-201917263872-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 29, 2019 |
| Priority date | Aug 1, 2018 |
| Publication date | Jun 4, 2024 |
| Grant date | Jun 4, 2024 |
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A composite substrate of the present disclosure is a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded, wherein the ratio of the number of oxygen atoms to the number of aluminum atoms in the bonding surface region including the bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5. The piezoelectric device of the present disclosure comprises the composite substrate. A method for manufacturing the composite substrate of the present disclosure comprises a step of preparing a piezoelectric substrate and a sapphire substrate, a step of heat-treating the sapphire substrate in a reducing atmosphere or in a vacuum, and a step of directly bonding the piezoelectric substrate to the sapphire substrate.
Opening claim text (preview).
The invention claimed is: 1. A composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded to each other, wherein a ratio of a number of oxygen atoms to a number of aluminum atoms in a bonding surface region including a bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5. 2. A composite substrate according to claim 1 , wherein the ratio of the number of oxygen atoms to the number of aluminum atoms in the bonding surface region of the sapphire substrate is less than a ratio of a number of oxygen atoms to a number of aluminum atoms in a bulk region of the sapphire substrate. 3. A composite substrate according to claim 1 , wherein a hydrogen concentration in the bonding surface region of the sapphire substrate is 1×10 16 atoms/cm 3 or less. 4. A composite substrate according to claim 1 , wherein the piezoelectric substrate comprises a piezoelectric material selected from lithium tantalate, lithium niobate, zinc oxide, and quartz crystal. 5. A piezoelectric device comprising the composite substrate according to claim 1 . 6. A piezoelectric device according to claim 5 , which is a surface acoustic wave device. 7. A method for manufacturing a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded to each other, comprising: preparing a piezoelectric substrate and a sapphire substrate, heat-treating the sapphire substrate in a reducing atmosphere or in a vacuum, and directly bonding the piezoelectric substrate and the sapphire substrate to each other, wherein a ratio of the number of oxygen atoms to the number of aluminum atoms in a bonding surface region including a bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5. 8. A method for manufacturing a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded to each other, comprising: preparing a piezoelectric substrate, growing or heat-treating a sapphire crystal in a reducing atmosphere, preparing a sapphire substrate by cutting the sapphire crystal, and directly bonding the piezoelectric substrate and the sapphire substrate to each other, wherein a ratio of the number of oxygen atoms to the number of aluminum atoms in a bonding surface region including a bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5.
of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title
for the manufacture of resonators or networks using surface acoustic waves · CPC title
of lithium niobate or lithium-tantalate substrates · CPC title
by laminating or bonding of piezoelectric or electrostrictive bodies · CPC title
Electricity · mapped topic
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