Fabrication methods for electronic devices integrating magnetic nanostructures

US12002605B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-12002605-B1
Application numberUS-202117176506-A
CountryUS
Kind codeB1
Filing dateFeb 16, 2021
Priority dateFeb 16, 2021
Publication dateJun 4, 2024
Grant dateJun 4, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Magnetic nanowire components may be used in passive radio-frequency device allowing for smaller size devices, lower power consumption, and on-chip packaging potential across a wide range of technologies. A method for fabricating magnetic nanowire component electronic devices include depositing a conductive device pattern and transmission lines onto a substrate, aligning and securing a magnetic nanowire component to the device pattern, packaging the device with an insulation layer. Alternatively, the conductive device pattern and transmission lines may be deposited on the magnetic nanowire component, and the magnetic nanowire component may then be attached to a substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for fabricating magnetic nanowire composite electronic devices the method comprising: providing a substrate; depositing an electrically conductive device pattern onto the substrate; depositing at least one electrically conductive transmission line onto the substrate; securing a magnetic nanowire component to the electrically conductive device pattern, the magnetic nanowire component being aligned to the electrically conductive device pattern; applying a first mask on top of the magnetic nanowire component, transmission lines and the substrate; depositing an insulation layer on top of the transmission lines; removing the first mask; depositing a ground layer on top of the magnetic nanowire component and the substrate; and depositing an insulating or dielectric layer on top of the ground layer. 2. A method according to claim 1 , further comprising fabricating a magnetic nanowire component that further comprises: preparing a porous template; cleaning pores of the porous template; placing an ionic fluid in a chamber, wherein the porous template is exposed to the ionic fluid through an aperture in the chamber; applying a voltage across an anode and a cathode creating an electric field across the ionic fluid and porous substrate; monitoring the applied voltage with a reference electrode; and stirring the ionic fluid. 3. A method according to claim 1 , wherein removing the first mask occurs before the deposition of the ground layer and further includes applying a second mask before depositing the ground layer; and removing the second mask after depositing the ground layer. 4. A method according to claim 1 , wherein depositing an insulating or dielectric layer on top of the ground layer comprises depositing an insulating layer on top of the ground layer. 5. A method according to claim 1 , wherein depositing an insulating or dielectric layer on top of the ground layer comprises depositing a dielectric layer on top of the ground layer. 6. A method according to claim 1 , wherein the magnetic nanowire component is secured to the electrically conductive device pattern by an adhesive substance. 7. A method according to claim 1 , wherein the magnetic nanowire component is bonded to the electrically conductive device pattern. 8. A method according to claim 1 , wherein the electrically conductive device pattern comprises a circulator device pattern.

Assignees

Inventors

Classifications

  • H01F1/0081Primary

    in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane · CPC title

  • for manufacturing permanent magnets · CPC title

  • Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

  • Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

  • Manufacture or treatment of nanostructures · CPC title

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What does patent US12002605B1 cover?
Magnetic nanowire components may be used in passive radio-frequency device allowing for smaller size devices, lower power consumption, and on-chip packaging potential across a wide range of technologies. A method for fabricating magnetic nanowire component electronic devices include depositing a conductive device pattern and transmission lines onto a substrate, aligning and securing a magnetic …
Who is the assignee on this patent?
Uchicago Argonne Llc
What technology area does this patent fall under?
Primary CPC classification H01F1/0081. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 04 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).