Light-emitting element with fluorescent material, display device, electronic device, and lighting device

US11997861B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11997861-B2
Application numberUS-202318100054-A
CountryUS
Kind codeB2
Filing dateJan 23, 2023
Priority dateAug 29, 2014
Publication dateMay 28, 2024
Grant dateMay 28, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A light-emitting element having high emission efficiency which includes a fluorescent material as a light-emitting substance is provided. A light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a light-emitting layer. The light-emitting layer includes a host material and a guest material. The host material has a difference of more than 0 eV and less than or equal to 0.2 eV between a singlet excitation energy level and a triplet excitation energy level. The guest material is capable of emitting fluorescence. The triplet excitation energy level of the host material is higher than a triplet excitation energy level of the guest material.

First claim

Opening claim text (preview).

What is claimed is: 1. A light-emitting device comprising: a first electrode; a light-emitting layer over the first electrode, the light-emitting layer comprising: a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and a second compound; and a light-emitting material capable of exhibiting fluorescence, a second electrode over the light-emitting layer, wherein the first compound comprises a condensed heterocyclic ring having three six-membered rings, wherein the light-emitting material comprises an anthracene ring, wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material, wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material, wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and wherein light emitted from the light-emitting layer comprises light emitted from the light-emitting material. 2. The light-emitting device according to claim 1 , wherein the light emitted from the light-emitting layer further comprises light emitted from the first compound. 3. The light-emitting device according to claim 1 , wherein the condensed heterocyclic ring comprises nitrogen. 4. The light-emitting device according to claim 1 , wherein the condensed heterocyclic ring comprises oxygen. 5. The light-emitting device according to claim 1 , further comprising a charge-generation layer over the light-emitting layer, and a first light-emitting unit over the charge-generation layer, wherein the light-emitting layer is included in a second light-emitting unit. 6. The light-emitting device according to claim 1 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV. 7. An electronic device comprising the light-emitting device according to claim 1 . 8. A light-emitting device comprising: a first electrode; a first light-emitting layer over the first electrode, the light-emitting layer comprising: a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and a second compound; and a light-emitting material capable of exhibiting fluorescence, a second electrode over the first light-emitting layer, wherein the first compound comprises an acridine skeleton, wherein the light-emitting material comprises an anthracene ring, wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material, wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material, wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and wherein light emitted from the first light-emitting layer comprises light emitted from the light-emitting material. 9. The light-emitting device according to claim 8 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV. 10. The light-emitting device according to claim 8 , wherein the light-emitting device comprises a first light-emitting unit comprising the first light-emitting layer, a charge-generation layer over the first light-emitting unit, and a second light-emitting unit comprising a second light-emitting layer. 11. The light-emitting device according to claim 10 , wherein the second light-emitting layer has a same structure as the first light-emitting layer. 12. The light-emitting device according to claim 8 , wherein the light emitted from the first light-emitting layer further comprises light emitted from the first compound. 13. An electronic device comprising the light-emitting device according to claim 8 . 14. A light-emitting device comprising: a first electrode; a light-emitting layer over the first electrode, the light-emitting layer comprising: a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and a second compound; and a light-emitting material capable of exhibiting fluorescence, a second electrode over the light-emitting layer, wherein the first compound comprises a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, wherein the light-emitting material comprises an anthracene ring, wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material, wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material, wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and wherein light emitted from the light-emitting layer comprises light emitted from the light-emitting material. 15. The light-emitting device according to claim 14 , wherein the π-electron deficient heteroaromatic ring is a triazine ring or a triazole ring. 16. The light-emitting device according to claim 14 , wherein the light emitted from the light-emitting layer further comprises light emitted from the first compound. 17. The light-emitting device according to claim 14 , wherein the π-electron rich heteroaromatic ring and the π-electron deficient heteroaromatic ring are directly bonded to each other. 18. The light-emitting device according to claim 14 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV. 19. An electronic device comprising the light-emitting device according to claim 14 .

Assignees

Inventors

Classifications

  • comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom · CPC title

  • Cathodes · CPC title

  • comprising colour filters or colour changing media [CCM] · CPC title

  • Tandem OLEDs · CPC title

  • Anodes · CPC title

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What does patent US11997861B2 cover?
A light-emitting element having high emission efficiency which includes a fluorescent material as a light-emitting substance is provided. A light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a light-emitting layer. The light-emitting layer includes a host material and a guest material. The host material has a difference of …
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H10K50/11. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 28 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).