Heterojunction optoelectronic device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11997857-B2
Application number	US-202016913502-A
Country	US
Kind code	B2
Filing date	Jun 26, 2020
Priority date	Nov 29, 2019
Publication date	May 28, 2024
Grant date	May 28, 2024

Abstract

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

First claim

We claim:

1. An optoelectronic device, comprising:
a heterojunction of a halide perovskite single crystal and a 2D semiconductor material layer;
wherein a difference in work function between the halide perovskite single crystal and the 2D semiconductor material layer is 0.3 eV or less;
wherein a high carrier mobility in the 2D semiconductor material layer induces hole-electron separation of a carrier in the halide perovskite single crystal;
wherein the 2D semiconductor material layer has a thickness of 5 nm to 15 nm;
wherein the 2D semiconductor material layer is an electron transport layer; and
wherein the 2D semiconductor material includes WSe 2 , ReS 2 , ReSe 2 , MoTe 2 , WS 2 .

2. The optoelectronic device according to claim 1 , wherein the halide perovskite single crystal has a thickness of from 1 nm to 5000 nm.

3. The optoelectronic device according to claim 1 , wherein the 2D semiconductor material layer and the halide perovskite single crystal have a thickness ratio of from 1:10 −1 to 1:10 7 .

4. The optoelectronic device according to claim 1 , wherein the optoelectronic device is a perovskite solar cell.

5. The optoelectronic device according to claim 4 , wherein the perovskite solar cell includes:
a lower electrode formed on a substrate;
the electron transport layer formed on the lower electrode;
the halide perovskite single crystal formed on the electron transport layer;
a hole transport layer formed on the halide perovskite single crystal; and
an upper electrode formed on the hole transport layer,
wherein the electron transport layer includes the 2D semiconductor material layer.

6. The optoelectronic device according to claim 5 ,
wherein the hole transport layer includes one or more members selected from Spiro-OMeTAD [2,2′,7,7′-tetrakis-(N-di-4-methoxyphenylamino)-9,9′-spirobifluorene], PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate)] G-PEDOT [poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate):polyglycol(glycerol)], PANI:PSS [polyaniline:poly(4-styrene sulfonate)], PANI:CSA (polyaniline:camphor sulfonic acid), PDBT [poly(4,4′-dimethoxy bithophene)], poly(3-hexylthiophene) (P3HT), poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diy]] (PCPDTBT), Poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), poly(triarylamine) (PTAA), MoO 3 , V 2 O 5 , NiO, WO 3 , CuI and CuSCN.

7. A method of manufacturing an optoelectronic device, comprising:
positioning a 2D semiconductor material layer on a flexible polymer film;
adjusting the positions of the 2D semiconductor material layer and a halide perovskite single crystal by moving the flexible polymer film; and
removing the flexible polymer film and bonding the 2D semiconductor material layer to the halide perovskite single crystal;
wherein a difference in work function between the halide perovskite single crystal and the 2D semiconductor material layer is 0.3 eV or less;
wherein a high carrier mobility in the 2D semiconductor material layer induces hole-electron separation of a carrier in the halide perovskite single crystal;
wherein the 2D semiconductor material layer has a thickness of 5 nm to 15 nm;
wherein the 2D semiconductor material layer is an electron transport layer; and
wherein the 2D semiconductor material includes WSe 2 , ReS 2 , ReSe 2 , MoTe 2 , WS 2 .

8. The method of claim 7 ,
wherein the positioning of the 2D semiconductor material layer on the flexible polymer film is performed by positioning a tape on which the 2D semiconductor material layer has been formed on the flexible polymer film and removing the tape.

9. A perovskite solar cell comprising:
a lower electrode formed on a substrate;
an electron transport layer formed on the lower electrode;
a halide perovskite single crystal formed on the electron transport layer;
a hole transport layer formed on the halide perovskite single crystal; and
an upper electrode formed on the hole transport layer,
wherein the hole transport layer includes a 2D semiconductor material layer,
wherein a difference in work function between the halide perovskite single crystal and the 2D semiconductor material layer is 0.3 eV or less;
wherein a high carrier mobility in the 2D semiconductor material layer induces hole-electron separation of a carrier in the halide perovskite single crystal;
wherein the 2D semiconductor material layer has a thickness of 5 nm to 15 nm;
wherein the electron transport layer is a second 2D semiconductor material layer; and
wherein the 2D semiconductor material includes WSe 2 , ReS 2 , ReSe 2 , MoTe 2 , WS 2 .

10. The perovskite solar cell according to claim 9 , wherein the electron transport layer includes another 2D semiconductor material layer.

11. The perovskite solar cell according to claim 10 ,
wherein the hole transport layer includes one or more members selected from Spiro-OMeTAD [2,2′,7,7′-tetrakis-(N-di-4-methoxyphenylamino)-9,9′-spirobifluorene], PEDOT:P55 [poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate)] G-PEDOT [poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate):polyglycol(glycerol)], PANI:PSS [polyaniline:poly(4-styrene sulfonate)], PANI:CSA (polyaniline:camphor sulfonic acid), PDBT [poly(4,4′-dimethoxy bithophene)], poly(3-hexylthiophene) (P3HT), poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diy]] (PCPDTBT), Poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), poly(triarylamine) (PTAA), MoO 3 , V 2 O 5 , NiO, WO 3 , CuI and CuSCN.

Assignees

• Ewha University—Industry Collaboration Found
• Ewha University—Industry Collaboration Fo

Inventors

• Jo William
• Jung Hye Ri

Classifications

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H10K2102/102

  comprising tin oxides, e.g. fluorine-doped SnO2 · CPC title

• H10K2102/00

  Constructional details relating to the organic devices covered by this subclass · CPC title

• C07F11/00

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title