Apparatus and techniques for substrate processing using independent ion source and radical source

Patent metadata

Field	Value
Publication number	US-11996266-B2
Application number	US-202017093139-A
Country	US
Kind code	B2
Filing date	Nov 9, 2020
Priority date	Dec 2, 2019
Publication date	May 28, 2024
Grant date	May 28, 2024

Abstract

A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

First claim

What is claimed is:

1. A system, comprising:
a substrate stage to support a substrate;
a plurality of beam sources, comprising:
an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and
a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:
an ion beam source scanner to scan the ion beam source with respect to the substrate.

2. The system of claim 1 , wherein the substrate stage comprises a scanner to scan the substrate with respect to at least one of the ion beam source and the radical beam source.

3. The system of claim 1 , further comprising:
a radical beam source scanner to scan the radical beam source with respect to the substrate.

4. The system of claim 1 , further comprising:
a radical beam source scanner to scan the radical beam source with respect to the substrate.

5. The system of claim 1 , wherein the ion beam source is rotatable with respect to a main plane of the substrate stage.

6. The system of claim 1 , wherein the radical beam source is rotatable with respect to a main plane of the substrate stage.

7. The system of claim 4 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

8. A system, comprising:
a substrate stage to support a substrate;
a plurality of beam sources, comprising:
an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and
a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:
a radical beam source scanner to scan the radical beam source with respect to the substrate.

9. The system of claim 8 , further comprising:
an ion beam source scanner to scan the ion beam with respect to the substrate.

10. The system of claim 8 , further comprising a radical generator arranged to generate radicals for the radical beam source, the radical generator comprising an RF plasma source, a thermal source, an electron beam source, or a hot cathode source.

11. The system of claim 8 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

12. A system, comprising:
a substrate stage to support a substrate;
a plurality of beam sources, comprising:
an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and
a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the ion beam source is configured to generate a ribbon ion beam, and wherein the radical beam source is configured to generate a ribbon radical beam.

13. The system of claim 12 , further comprising a scanning system, the scanning system including at least one of a substrate scanner, ion beam source scanner, and radical beam source scanner.

14. The system of claim 12 , wherein the substrate stage is disposed in a process chamber, the system further comprising a barrier, extending within the process chamber and disposed between the ion beam source and the radical beam source.

15. The system of claim 12 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

16. A system, comprising:
a substrate stage to support a substrate;
a plurality of beam sources, comprising:
an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and
a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,

wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the substrate stage is disposed in a process chamber, the system further comprising a barrier, extending within the process chamber and disposed between the ion beam source and the radical beam source.

17. The system of claim 16 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

18. The system of claim 16 , further comprising a scanning system, the scanning system including at least one of a substrate scanner, ion beam source scanner, and radical beam source scanner.

19. The system of claim 16 , wherein the ion beam source is configured to generate a ribbon ion beam, and wherein the radical beam source is configured to generate a ribbon radical beam.

Assignees

• Applied Materials Inc

Inventors

• Renau Anthony
• Olson Joseph C
• Kurunczi Peter F

Classifications

• H01J37/304 Primary

  Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals · CPC title

• H01J37/20

  Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support · CPC title

• H01J2237/201

  for mounting multiple objects · CPC title

• H01J2237/202

  Movement · CPC title

• H01J2237/3151

  Etching · CPC title