Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect

Patent metadata

Field	Value
Publication number	US-11996129-B2
Application number	US-201716308337-A
Country	US
Kind code	B2
Filing date	Jun 12, 2017
Priority date	Jun 10, 2016
Publication date	May 28, 2024
Grant date	May 28, 2024

Abstract

A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.

First claim

What is claimed is what is described or illustrated, including:

1. A semiconductor device, comprising:
a multi-layer structure including a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure that exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, the underlying structure including:
(i) a piezoelectric material structure to exert a stress to the ferromagnetic, magnetostrictive layer to cause different magnetization directions in the ferromagnetic, magnetostrictive layer to be distinctive from one another and to represent the more than two distinctive magnetic states; and
(ii) a spin Hall metal layer that exhibits the spin Hall effect to inject a spin polarized current into the ferromagnetic, magnetostrictive layer to cause the ferromagnetic, magnetostrictive layer to be in one of the different magnetization directions in the ferromagnetic, magnetostrictive layer.

2. The device as in claim 1 , wherein:
the multi-layer structure includes a multiferroic structure comprising a piezoelectric material structure disposed below the ferromagnetic, magnetostrictive layer.

3. The device as in claim 2 , wherein the multi-layer structure includes Fe and Ga.

4. The device as in claim 3 , wherein the multi-layer structure includes Fe 1-x Ga x , on BaTiO 3 .

5. The device as in claim 1 , further comprising a device circuitry coupled to the piezoelectric material structure to apply a piezoelectric control signal in controlling the exerted stress and to apply a charge current in the spin Hall metal layer to set the ferromagnetic, magnetostrictive layer in a specific magnetic state of the more than two distinctive magnetic states, wherein the device circuitry is further operable to supply a sensing current flowing through the ferromagnetic, magnetostrictive layer to produce a readout current along the spin Hall metal layer that indicates the specific magnetic state of the more than two distinctive magnetic states.

6. A semiconductor device, comprising:
a multi-state circuit that exhibits four different magnetic states and includes a multi-layer structure that includes:
a ferroelectric material layer that exhibits a piezoelectric effect and is operable to produce a strain in response to an electrical control signal applied to the ferroelectric material layer;
a ferromagnetic material layer stacked with the ferroelectric material layer in a way to expose the ferromagnetic material to the strain produced by the ferroelectric material layer, the ferromagnetic material layer exhibiting a biaxial magnetic anisotropy along two different magnetization axes that are stabilized by the strain from the ferroelectric material layer so that the ferromagnetic layer exhibits four different magnetization states based on two different magnetization directions in each of the two different magnetization axes; and
a spin Hall metal layer stacked with the ferroelectric material layer and the ferromagnetic material layer and configured to exhibit (1) a spin Hall effect in response to a charge current flowing in the spin Hall metal layer to produce a spin polarized current to flow into the ferromagnetic material layer along a direction perpendicular to the ferromagnetic material layer, and (2) an inverse spin Hall effect in response to a sensing current flowing through the ferromagnetic material layer and the spin Hall metal layer along a sensing current direction perpendicular to the ferromagnetic material layer and the spin Hall metal layer to produce a readout current along the spin Hall metal layer representing one of the four different magnetization states of the ferroelectric material layer, and
wherein the multi-state circuit includes (1) a ferroelectric driver circuit that produces the electrical control signal applied to the ferroelectric material layer, (2) a charge current source circuit coupled to the spin Hall metal layer to generate the charge current flowing in the spin Hall metal layer, and (3) a sensing current source circuit coupled to produce the sensing current flowing through the ferromagnetic material layer to produce the readout current along the spin Hall metal layer.

7. The device as in claim 6 , wherein the spin Hall metal layer is between the ferroelectric material layer and the ferromagnetic material layer.

8. The device as in claim 6 , wherein the ferroelectric material layer and the ferromagnetic material layer are placed next to each other.

9. The device as in claim 8 , wherein the spin Hall metal layer is next to the ferromagnetic material layer.

10. The device as in claim 6 , wherein the ferromagnetic material layer includes Fe and Ga.

11. The device as in claim 6 , wherein the ferroelectric material layer includes PMN-PT ((1-x)PbMg 1/3 Nb 2/3 O 3 -(x)PbTiO 3 ).

12. The device as in claim 6 , wherein the spin Hall metal layer includes Pt, Ta, W, Bi 2 Se 3 , or an Au—Bi alloy.

13. The device as in claim 6 , wherein
the multi-layer structure is structured so that the spin Hall metal layer is formed over the ferroelectric material layer and the ferromagnetic material layer is formed over the spin Hall metal layer, and
the multi-layer structure further includes an electrically conductive layer formed over the ferromagnetic material layer.

14. The device as in claim 6 , wherein
the multi-layer structure is structured so that the spin Hall metal layer is formed over the ferromagnetic material layer formed over the ferroelectric material layer.

15. The device as in claim 6 , comprising different multi-state circuits that each exhibit four different magnetic states and are coupled to collectively perform logic operations.

16. The device as in claim 6 , wherein:
the multi-state circuit is a memory circuit that stores data based on the four different magnetization states of the ferromagnetic layer,
the multi-state circuit includes a memory control circuit that controls the sensing current source circuit, in a readout operation, to produce the sensing current flowing through the ferromagnetic material layer to produce the readout current along the spin Hall metal layer that indicates which one of the four different magnetization states that the ferromagnetic material layer is in for a stored data bit, and
the memory control circuit is coupled to the ferroelectric driver circuit and the charge current source circuit, in a writing operation, to control the charge current in the spin Hall metal layer and the electrical control signal applied to the ferroelectric material layer in setting a magnetization direction of the ferromagnetic material layer to be in a selected magnetization state of the four different magnetization states of the ferromagnetic material layer to store a data bit represented by the selected magnetization state.

17. The device as in claim 6 , wherein the two different magnetization axes provides four different magnetization directions that are in-plane or in combination of the in-plane or out-of-plane.

18. The device as in claim 6 , wherein the ferroelectric driver circuit and the charge current source circuit collectively operate to switch a magnetization state of the four different magnetization states.

19. The device as in claim 6 , wherein the readout current has a selected value of four different values corresponding to the four different magnetization states, the four different values being different combinations of the charge current and the electrical control signal.

Assignees

• Univ Cornell
• Univ Missouri
• Univ Michigan Regents
• Univ Oregon State
• Rahman Mostafizur
• Kuhn Kelin
• Heron John

Inventors

• Schlom Darrell
• Rahman Mostafizur
• Kuhn Kelin
• Heron John

Classifications

• H10N50/20

  Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10) · CPC title

• H10N50/85

  Materials of the active region · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title