Thermal emission structure
US-2018334269-A1 · Nov 22, 2018 · US
US11993405B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11993405-B2 |
| Application number | US-201916594648-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 7, 2019 |
| Priority date | Feb 22, 2019 |
| Publication date | May 28, 2024 |
| Grant date | May 28, 2024 |
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Systems and methods are provided for protecting a temperature sensitive object. A system includes a temperature sensitive object and a thermal control material in thermal communication with the temperature sensitive object. The thermal control material has an emissivity that varies as a function of temperature, and includes a substrate comprising a first surface comprising one of a photonic crystal, a metamaterial, a metasurface, and a multilayer film, a solid state phase change material in contact with the surface, and a reflective thin film material at one of a second surface of the substrate, at a surface of the solid state phase change material, and on an opposite side of an optical cavity from the substrate.
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What is claimed is: 1. A system, comprising: a temperature sensitive object; and a thermal control material in thermal communication with the temperature sensitive object and having an emissivity that varies as a function of temperature, the thermal control material comprising: a substrate comprising a first surface comprising one of a photonic crystal, a metamaterial, a metasurface, and a multilayer film; solid state phase change material in contact with the surface; an optical cavity formed of zinc selenide; and a reflective thin film material positioned on an opposite side of the optical cavity from the substrate. 2. The system of claim 1 , wherein the surface is a substrate patterned to form an array of microcones. 3. The system of claim 1 , wherein the solid-state phase change material is one of vanadium dioxide and an alloy of vanadium dioxide with a transition metal. 4. The system of claim 1 , wherein the solid-state phase change material is one of germanium telluride and an alloy of germanium with another group 6 element. 5. The system of claim 1 , wherein solid-state phase change material is a layer having a thickness less than five hundred nanometers. 6. The system of claim 1 , wherein the solid-state phase material is selected to have a phase-transition temperature within a desired operating range of the temperature sensitive object. 7. The system of claim 1 , wherein the solid-state phase change material can transition between a dielectric state, during which the thermal control material has a first emissivity, and a metallic state, during which the thermal control material has a second emissivity, the second emissivity being at least a factor of two larger than the first emissivity. 8. The system of claim 1 , each of the surface and the solid-state phase change material are configured such that a temperature at the temperature sensitive object varies by less than twenty kelvin when the thermal control material is subjected to a time-varying heat flux between one hundred fifty watts per square meter and five hundred watts per square meter. 9. The system of claim 8 , wherein each of the temperature sensitive object and the thermal control material are implemented on a spacecraft and the time-varying heat flux is solar illumination. 10. A method for providing a thermal control material, comprising: fabricating one of a photonic crystal, a metamaterial, a metasurface, and a multilayer film on a first surface of a substrate; applying a layer of solid-state phase change material to the first surface of the substrate; and positioning a layer of reflective material on an opposite side of an optical cavity from the substrate, the optical cavity being formed of zinc selenide. 11. The method of claim 10 , further comprising at least partially enclosing a temperature sensitive device in the substrate. 12. The method of claim 10 , wherein the wavelength range of interest is between ten nanometers and thirty microns. 13. The method of claim 10 , wherein fabricating the one of a photonic crystal, a metamaterial, a metasurface, and a multilayer film comprises etching the substrate. 14. The method of claim 13 , wherein the etching of the substrate provides an array of microcones. 15. The method of claim 10 , wherein fabricating the one of a photonic crystal, a metamaterial, a metasurface, and a multilayer film comprises fabricating one of a lithographically patterned and a lithographically grown feature on the substrate. 16. The method of claim 15 , wherein the one of a lithographically patterned and a lithographically grown feature provides a photonic metamaterial. 17. A thermal control material, comprising: a substrate patterned on a first surface to form an array of microcones; a layer of solid-state phase change material applied to the array of microcones; and a layer of reflective material positioned on an opposite side of an optical cavity from the substrate, the optical cavity being formed of zinc selenide. 18. The thermal control material of claim 17 , wherein the array of microcones have a height between one and one-hundred micrometers, and a period between five and fifty micrometers. 19. The thermal control material of claim 17 , wherein the layer of solid-state phase change material is a conformal layer of vanadium dioxide having a thickness less than five hundred nanometers. 20. A system, comprising: a temperature sensitive device; and the thermal control material of claim 17 , at least partially enclosing the temperature sensitive device.
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