Light-emitting device

Patent metadata

Field	Value
Publication number	US-11990575-B2
Application number	US-202318205920-A
Country	US
Kind code	B2
Filing date	Jun 5, 2023
Priority date	May 4, 2020
Publication date	May 21, 2024
Grant date	May 21, 2024

Abstract

A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate, comprising a top surface;
a semiconductor stack formed on the top surface of the substrate, the semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer comprises a mesa continuously surrounding a periphery of the semiconductor stack;
a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; and
an insulating reflective structure comprising a protective layer covering the mesa, a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer, and a compact layer covering the reflective layer,
wherein the protective layer and the compact layer are in direct contact with each other on the mesa, the reflective layer is formed between the protective layer and the compact layer on the mesa, and the reflective layer does not contact the first semiconductor layer on the mesa.

2. The light-emitting device according to claim 1 , wherein the protective layer and the compact layer contact the first semiconductor layer.

3. The light-emitting device according to claim 1 , wherein the protective layer or the reflective layer do not cover the top surface of the substrate.

4. The light-emitting device according to claim 1 , wherein the protective layer and the reflective layer do not cover the top surface of the substrate.

5. The light-emitting device according to claim 1 , wherein the protective layer comprises silicon oxide.

6. The light-emitting device according to claim 1 , wherein the compact layer comprises silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, yttrium oxide, lanthanum oxide, tantalum oxide, silicon nitride, aluminum nitride, or silicon oxynitride.

7. The light-emitting device according to claim 1 , wherein an interface of the compact layer contacting a sidewall of the semiconductor stack comprises a metal element and oxygen.

8. The light-emitting device according to claim 1 , wherein the insulating reflective structure comprises a first insulating reflective structure opening on the first semiconductor layer and a second insulating reflective structure opening on the second semiconductor layer.

9. The light-emitting device according to claim 8 , further comprising a first electrode pad covering the first insulating reflective structure opening and a second electrode pad covering the second insulating reflective structure opening.

10. The light-emitting device according to claim 1 , further comprising a first electrode pad passing through the protective layer, the reflective layer, and the compact layer.

11. The light-emitting device according to claim 10 , further comprising a second electrode pad passing through the protective layer, the reflective layer, and the compact layer.

12. The light-emitting device according to claim 1 , wherein the compact layer contacts the top surface of the substrate.

13. The light-emitting device according to claim 12 , wherein an outer edge of the protective layer is aligned with an outer edge of the reflective layer.

14. The light-emitting device according to claim 13 , wherein the compact layer covers the outer edge of the reflective layer.

15. The light-emitting device according to claim 13 , wherein the outer edge of the reflective layer is separated from a sidewall of the first semiconductor layer by a distance, and the sidewall of the first semiconductor layer connects the top surface of the substrate.

16. The light-emitting device according to claim 15 , wherein an angle between the sidewall of the first semiconductor layer and the top surface of the substrate 10 is between 70 degrees and 110 degrees.

17. The light-emitting device according to claim 15 , wherein an angle between the sidewall of the first semiconductor layer and the top surface of the substrate 10 is between 10 degrees and 50 degrees.

Assignees

• Epistar Corp

Inventors

• Wang Hsin-Ying
• Chen Chih-Hao
• Liao Chien-Chih
• Chen Chao-Hsing
• Lo Wu-Tsung
• Ko Tsun-Kai
• Ou Chen

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/01

  Manufacture or treatment · CPC title