Photocatalyst, gas sensor device and gas sensor

Patent metadata

Field	Value
Publication number	US-11986806-B2
Application number	US-202017115846-A
Country	US
Kind code	B2
Filing date	Dec 9, 2020
Priority date	Jun 28, 2018
Publication date	May 21, 2024
Grant date	May 21, 2024

Abstract

A photocatalyst made of cuprous bromide, wherein the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by irradiation with light.

First claim

What is claimed is:

1. A gas sensor comprising:
a gas sensor device provided with a first electrode, a second electrode, and a sensitive film that connects the first electrode to the second electrode;
a light source that irradiates the sensitive film with light, wherein the sensitive film is made of cuprous bromide, and the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by light applied from the light source; and
a control unit that:
measures a concentration of a measuring target gas based on a value detected by the gas sensor device in a case where the measuring target gas is supplied and also controls the light source,
controls a gas supply timing and a gas supply tune for supplying the measuring target gas, and also controls a light irradiation timing and a light irradiation time for irradiating the sensitive film with light from the light source,
controls the light source to irradiate the sensitive film with light at a timing at which the supply of the measuring target gas is stopped, and
controls the light source to irradiate the sensitive film with light until a resistance value returns to a resistance value from the gas sensor device detected when the supply of the measuring target gas is started.

2. The gas sensor according to claim 1 , wherein the light source is a light source that applies light including a wavelength component in a near-ultraviolet light region.

3. The gas sensor according to claim 1 , wherein the control unit controls the light source to irradiate the sensitive film with light for a first predetermined time.

4. The gas sensor according to claim 3 , wherein the control unit measures the concentration of the measuring target gas based on a resistance value from the gas sensor device detected when the supply of the measuring target gas is stopped and the resistance value from the gas sensor device detected at the end of the light irradiation to the sensitive film.

5. The gas sensor according to claim 3 , wherein the control unit measures the concentration of the measuring target gas based on a resistance value from the gas sensor device detected at the end of the light irradiation to the sensitive film and the resistance value from the gas sensor device detected after a second predetermined time from the end of the light irradiation to the sensitive film.

6. The gas sensor according to claim 1 , wherein the control unit measures the concentration of the measuring target gas based on the resistance value from the gas sensor device detected when the supply of the measuring target gas is started and the resistance value from the gas sensor device detected when the measuring target gas is supplied for a predetermined time.

7. The gas sensor according to claim 1 , comprising: a purge gas supply mechanism that supplies purge gas in place of the measuring target gas, wherein the control unit controls a purge gas supply timing and a purge gas supply time for supplying the purge gas.

8. The gas sensor according to claim 7 , wherein the control unit executes a measurement sequence for measuring the concentration of the measuring target gas while dividing the sequence into a first region, a second region, and a third region, a specified pattern out of a plurality of patterns obtained by combining measuring target gas supply control, purge gas supply control, and light irradiation control is executed in the first region, second region, and third region, and the concentration of the measuring target gas is measured based on a value detected by the gas sensor device in the second region.

9. The gas sensor according to claim 7 , wherein the control unit controls the purge gas supply mechanism to supply the purge gas until the resistance value from the gas sensor device reaches an initial value and controls the light source to irradiate the sensitive film with light after the measurement ends, ends the control to the light source when the resistance value from the gas sensor device reaches the initial value, and continues the control to the purge gas supply mechanism for a certain time, and thereafter controls to stop operation.

10. The gas sensor according to claim 1 , wherein the control unit controls the light source to irradiate the sensitive film with light, controls the light source to irradiate the sensitive film with light while supplying the measuring target gas, or controls light source to irradiate the sensitive film with light and controls the light source to irradiate the sensitive film with light while supplying the measuring target gas at the time of starting before the measurement is started.

Assignees

• Fujitsu Ltd

Inventors

• Ushigome Michio
• Wakamura Masato
• Tsuboi Osamu

Classifications

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• B01J35/70

  characterised by their crystalline properties, e.g. semi-crystalline (catalysts comprising carbon B01J21/18; molecular sieves B01J29/00) · CPC title

• B01J27/122 Primary

  of copper · CPC title

• B01J35/004

  Operations & Transport · mapped topic

• C01G3/04

  Halides · CPC title