Polishing device, polishing method, and recording medium for recording program for determining supply position of polishing liquid

Patent metadata

Field	Value
Publication number	US-11980998-B2
Application number	US-202016796903-A
Country	US
Kind code	B2
Filing date	Feb 20, 2020
Priority date	Feb 21, 2019
Publication date	May 14, 2024
Grant date	May 14, 2024

Abstract

An operation control unit includes a storage device storing a program which includes commands of: obtaining a correlation between a supply position of the polishing liquid in the radial direction of the polishing pad using the liquid injection nozzle and an average polishing rate of the substrate and an distribution of the polishing rate within the substrate; determining a movable range of the liquid injection nozzle according to a predetermined range of an allowable average polishing rate and the correlation between the supply position of the polishing liquid and the average polishing rate; determining an optimal supply position of the polishing liquid from the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate within the determined movable range of the liquid injection nozzle; and moving the liquid injection nozzle to the determined supply position to polish the substrate.

First claim

What is claimed is:

1. A polishing device comprising:
a polishing pad;
a top ring which presses a substrate against the polishing pad to polish the substrate;
a liquid injection nozzle which injects a polishing liquid in a fan shape on the polishing pad;
a nozzle moving device which moves the liquid injection nozzle in a radial direction of the polishing pad; and
an operation control unit configured to control an operation of the nozzle moving device,
wherein the operation control unit comprises a storage device which stores instructions,
which when executed by a processing device, causes the processing device to:
obtain a correlation between a supply position of the polishing liquid in the radial direction of the polishing pad using the liquid injection nozzle and an average polishing rate of the substrate and an distribution of a polishing rate within the substrate;
determine a movable range of the liquid injection nozzle according to a predetermined range of an allowable average polishing rate and the correlation between the supply position of the polishing liquid and the average polishing rate, wherein the movable range of the liquid injection nozzle is determined according to supply positions of the liquid injection nozzle whose average polishing rates are within the predetermined range of the allowable average polishing rate;
determine an optimal supply position of the polishing liquid from the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate within the determined movable range of the liquid injection nozzle; and
cause the nozzle moving device to move the liquid injection nozzle to the determined supply position to polish the substrate.

2. The polishing device according to claim 1 , further comprising a film thickness measurement sensor which measures a film thickness within the substrate,
including a remained film distribution within the substrate,
wherein the instructions, which when executed by the processing device, cause the processing device to:
receive the remained film distribution within the substrate from the film thickness measurement sensor;
determine distribution of a target polishing amount according to a difference between the measured remained film distribution and a predetermined target film distribution;
determine the optimal supply position of the polishing liquid within the determined movable range of the liquid injection nozzle from the target polishing amount distribution and the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate; and
cause the nozzle moving device to move the liquid injection nozzle to the determined supply position.

3. The polishing device according to claim 2 ,
wherein the instructions causes the processing device to:
obtain a polishing rate distribution during actual polishing from a change with a lapse of time of the measured remained film distribution; and
determine a target control range corresponding to the target polishing amount according to the polishing rate distribution during the actual polishing.

4. The polishing device according to claim 2 ,
wherein the instructions causes the processing device to obtain a polishing rate distribution during actual polishing from a change with a lapse of time of the measured remained film distribution, and determine a target polishing rate distribution corresponding to the target polishing amount according to the polishing rate distribution during the actual polishing.

5. A polishing method comprising:
obtaining a correlation between a supply position of a polishing liquid in a radial direction of a polishing pad using a liquid injection nozzle which injects the polishing liquid onto the polishing pad in a fan shape and an average polishing rate of a substrate and an distribution of a polishing rate within the substrate;
determining a movable range of the liquid injection nozzle from a predetermined range of an allowable average polishing rate and the correlation between the supply position of the polishing liquid and the average polishing rate, wherein the movable range of the liquid injection nozzle is determined according to supply positions of the liquid injection nozzle whose average polishing rates are within the predetermined range of the allowable average polishing rate;
determining an optimal supply position of the polishing liquid from the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate within the determined movable range of the liquid injection nozzle; and
cause a nozzle moving device to move the liquid injection nozzle to the determined supply position to polish the substrate.

6. The polishing method according to claim 5 , further comprising:
measuring a remained film distribution within the substrate using a film thickness measurement sensor which measures a film thickness within the substrate;
determining a target polishing amount distribution according to a difference between the measured remained film distribution and a predetermined target film distribution;
determining the optimal supply position of the polishing liquid within the determined movable range of the liquid injection nozzle from the target polishing amount distribution and the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate; and
controlling a nozzle moving device to move the liquid injection nozzle to the determined supply position.

7. The polishing method according to claim 6 , further comprising:
obtaining a polishing rate distribution during actual polishing from a change with a lapse of time of the measured remained film distribution; and
determining a target control range corresponding to the target polishing amount distribution according to the polishing rate distribution during the actual polishing.

8. The polishing method according to claim 6 , further comprising:
obtaining a polishing rate distribution during actual polishing from a change with a lapse of time of the measured remained film distribution; and
determining a target polishing rate distribution corresponding to the target polishing amount according to the polishing rate distribution during the actual polishing.

9. A non-transitory computer-readable recording medium storing instructions, which when executed by a computer, cause the computer to:
obtain a correlation between a supply position of a polishing liquid in a radial direction of a polishing pad using a liquid injection nozzle which injects the polishing liquid onto the polishing pad in a fan shape and an average polishing rate of a substrate and an distribution of a polishing rate within the substrate;
determine a movable range of the liquid injection nozzle from a predetermined range of an allowable average polishing rate and the correlation between the supply position of the polishing liquid and the average polishing rate, wherein the movable range of the liquid injection nozzle is determined according to supply positions of the liquid injection nozzle whose average polishing rates are within the predetermined range of the allowable average polishing rate;
determine an optimal supply position of the polishing liquid from the correlation between the supply position of the polishing liquid and the distribution of the polishing rate within the substrate within the determined movable range of the liquid injection nozzle; and
cause a nozzle moving device to move the liquid injection nozzle to the determined supply position to polish the substrate.

10. The recording

Assignees

• Ebara Corp

Inventors

• Kobata Itsuki
• Yamazaki Takashi
• Kosuge Ryuichi
• Sone Tadakazu

Classifications

• B24B57/02 Primary

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• B24B37/005 Primary

  Control means for lapping machines or devices · CPC title

• B24B37/34

  Accessories · CPC title

• B24B55/02

  Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant (cooling or lubricating during dressing operation B24B53/095; incorporated in grinding wheels B24D) · CPC title

• B24D13/147

  comprising assemblies of felted or spongy material; comprising pads surrounded by a flexible material · CPC title