Optical detector

Patent metadata

Field	Value
Publication number	US-11976979-B2
Application number	US-202017425160-A
Country	US
Kind code	B2
Filing date	Jan 28, 2020
Priority date	Jan 29, 2019
Publication date	May 7, 2024
Grant date	May 7, 2024

Abstract

Described herein is a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas, specifically between adjacent sensor areas, thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

First claim

The invention claimed is:

1. A detector ( 110 ) for an optical detection of an incident light beam ( 120 ), comprising
a circuit carrier ( 130 ) designed to carry at least one layer;
at least one absorptive layer ( 138 ), the absorptive layer ( 138 ) being placed on a partition of the circuit carrier ( 130 ), wherein the absorptive layer ( 138 ) is designed to at least partially absorb the incident light beam ( 120 ), wherein the absorptive layer ( 138 ) incorporates infrared absorbing pigments ( 144 ), wherein the absorptive layer ( 138 ) is or comprises an adhesive layer ( 142 ), wherein the adhesive layer ( 142 ) comprises an adhesive substance which is an organic adhesive, wherein the organic adhesive is selected from the group consisting of polypropylene, polyvinyl chloride, polyvinyl acetate, polysulfide, silyl modified polymer, polyester, silicone, polyol, polyvinyl alcohol, ethylene-vinyl-acetate, cyano-acrylate, polyacrylate, polyethylene, polyvinylpyrrolidone, acrylonitrile, rubber cement, recorcinol glue, and polyamide;
a substrate layer ( 114 ), the substrate layer ( 114 ) being directly or indirectly adjacent to the absorptive layer ( 138 ), wherein the substrate layer ( 114 ) wherein the substrate layer ( 114 ) is at least partially transparent with respect to the incident light beam ( 120 );
at least one sensor area ( 122 , 122 ′), the at least one sensor area ( 122 , 122 ′) being placed on the substrate layer ( 114 ), wherein the at least one sensor area ( 122 , 122 ′) is designed to generate at least one sensor signal in a manner dependent on an illumination of the at least one sensor area ( 122 , 122 ′) by the incident light beam ( 120 ), wherein the at least one sensor area comprises at least two individual sensor areas ( 122 , 122 ′), wherein adjacent sensor areas ( 122 , 122 ′) are separated with respect to each other by a gap ( 126 ); and
an evaluation device ( 150 ) designed to generate at least one item of information by evaluating the at least one sensor signal.

2. The detector ( 110 ) according to claim 1 , wherein the absorptive layer ( 138 ) is designed to at least partially absorb at least one wavelength in at least a partition of the infrared spectral range, the infrared spectral range ranging from 760 nm to 1000 μm.

3. The detector ( 110 ) according to claim 1 , wherein the infrared absorbing pigments ( 144 ) are selected from the group consisting of carbon black ( 146 ), graphite, carbon, vantablack, LaB 6 , copper bronze, copper chromite black, cobalt chromite black, and manganese ferrite black.

4. The detector ( 110 ) according to claim 1 , wherein a concentration of the pigments within the absorptive layer ( 138 ) is 0.1 wt. % to 10 wt. %.

5. The detector ( 110 ) according to claim 1 , comprising at least two individual absorptive layers ( 138 ), wherein the at least two absorptive layers ( 138 ) are arranged in a stack.

6. The detector ( 110 ) according to claim 1 , wherein the absorptive layer ( 138 ) exhibits a refractive index which is designed for limiting back-reflection at an interface between the absorptive layer ( 138 ) and the substrate layer ( 114 ).

7. The detector ( 110 ) according to claim 1 , wherein the at least one sensor area ( 122 , 122 ′) comprises a photosensitive material ( 128 ), wherein the photosensitive material ( 128 ) is an inorganic photoconductive material comprising one or more of selenium, tellurium, a selenium-tellurium alloy, a metal oxide, a group IV element or compound, a III-V compound, a II-VI compound, a chalcogenide, a pnictogenide, a halide, and solid solutions and/or doped variants thereof.

8. The detector ( 110 ) according to claim 7 , wherein the photosensitive material ( 128 ) chalcogenide is selected from the group consisting of lead sulfide (PbS), lead selenide (PbSe), indium antimonide (InSb), mercury cadmium telluride (MCT, HgCdTe), indium gallium arsenide (InGaAs), indium arsenide (InAs), and a solid solution and/or a doped variant thereof.

9. The detector ( 110 ) according to claim 1 , further comprising at least two individual electrical contacts ( 148 , 148 ′) contacting the sensor area ( 122 , 122 ′), wherein the electrical contacts ( 148 , 148 ′) are designed to transmit the sensor signal via the circuit carrier ( 130 ) to the evaluation device ( 150 ).

10. A method of using the optical detector ( 110 ) according to claim 1 , the method comprising using the optical detector ( 110 ) for a purpose selected from the group consisting of: gas sensing, fire detection, flame detection, heat detection, smoke detection, combustion monitoring, spectroscopy, temperature sensing, motion sensing, industrial monitoring, chemical sensing, exhaust gas monitoring, and a security application.

11. A method for manufacturing a detector ( 110 ) for an optical detection of an incident light beam ( 120 ), the method comprising the following steps:
a) depositing at least one absorptive layer ( 138 ) on a partition of a circuit carrier ( 130 ), the absorptive layer ( 138 ) being designed to at least partially absorb the incident light beam ( 120 ), wherein the absorptive layer ( 138 ) incorporates infrared absorbing pigments ( 144 ), wherein the absorptive layer ( 138 ) is or comprises an adhesive layer ( 142 ), wherein the adhesive layer ( 142 ) comprises an adhesive substance which is an organic adhesive, wherein the organic adhesive is selected from the group consisting of polypropylene, polyvinyl chloride, polyvinyl acetate, polysulfide, silyl modified polymer, polyester, silicone, polyol, polyvinyl alcohol, ethylene-vinyl-acetate, cyano-acrylate, polyacrylate, polyethylene, polyvinylpyrrolidone, acrylonitrile, rubber cement, recorcinol glue, and polyamide;
b) generating at least one sensor area ( 122 , 122 ′) by depositing a photosensitive material ( 128 ) on an at least partially transparent substrate layer ( 114 ), wherein the at least one sensor area ( 122 , 122 ′) is designed to generate at least one sensor signal in a manner dependent on an illumination of the at least one sensor area ( 122 , 122 ′) by the incident light beam ( 120 ), wherein the at least one sensor area comprises at least two individual sensor areas ( 122 , 122 ′), wherein adjacent sensor areas ( 122 , 122 ′) are separated with respect to each other by a gap ( 126 );
c) placing the substrate layer ( 114 ) carrying the at least one sensor area ( 122 , 122 ′) onto the absorptive layer ( 138 ); and
d) providing an evaluation device ( 150 ), wherein the evaluation device ( 150 ) is designed to generate at least one item of information by evaluating the at least one sensor signal.

12. The method according to claim 11 , wherein the infrared absorbing pigments ( 144 ) are selected from a group consisting of carbon black ( 146 ), graphite, carbon, vantablack, LaB6, copper bronze, copper chromite black, cobalt chromite black, and manganese ferrite black.

Assignees

• Trinamix Gmbh

Inventors

• Valouch Sebastian
• Klein Alexander
• Mueller Sebastian
• Hermes Wilfried
• Send Robert

Classifications

• H10F30/15

  comprising amorphous semiconductors · CPC title

• H10F77/127

  comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe · CPC title

• H10F77/30

  Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80) · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title