Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters

Patent metadata

Field	Value
Publication number	US-11973489-B2
Application number	US-202217940909-A
Country	US
Kind code	B2
Filing date	Sep 8, 2022
Priority date	Oct 5, 2020
Publication date	Apr 30, 2024
Grant date	Apr 30, 2024

Abstract

A radio frequency filter includes at least a first sub-filter and a second sub-filter connected in parallel between a first port and a second port. Each of the sub-filters has a piezoelectric plate having front and back surfaces, the back surface attached to a substrate, and portions of the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on the front surface of the plate, the conductor pattern includes interdigital transducers (IDTs) of a respective plurality of resonators, with interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms. A thickness of the portions of the piezoelectric plate of the first sub-filter is different from a thickness of the portions of the piezoelectric plate of the second sub-filter.

First claim

It is claimed:

1. A radio frequency filter, comprising:
at least a first sub-filter and a second sub-filter connected in parallel between a first port and a second port, each of the first and second sub-filters comprising:
at least one piezoelectric layer attached either directly or via one or more intermediate layers to a substrate, the at least one piezoelectric layer having portions that form a plurality of diaphragms over respective cavities of the respective sub-filter; and
a conductor pattern at only one surface of the at least one piezoelectric layer, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms,

wherein a thickness of the respective portion of the at least one piezoelectric layer of the first sub-filter is different from a thickness of the respective portion of the at least one piezoelectric layer of the second sub-filter, and
wherein the at least one piezoelectric layer and the respective IDTs of the first and second sub-filters are configured such that radio frequency signals applied to the respective IDTs excite primary shear acoustic modes in the respective portions of the at least one piezoelectric layer that form the respective diaphragms.

2. The filter of claim 1 , wherein the at least one piezoelectric layer of the first sub-filter is a same layer as the at least one piezoelectric layer of the second sub-filter.

3. The filter of claim 1 , wherein the at least one piezoelectric layer of the first sub-filter is a different layer than the at least one piezoelectric layer of the second sub-filter.

4. The filter of claim 3 , wherein the first port is an input of the filter, and the second port is an output of the filter.

5. The filter of claim 1 , wherein
the respective thicknesses of the portions of the at least one piezoelectric layer of the first and second sub-filters are selected to tune the primary shear acoustic modes in the respective portions of the at least one piezoelectric layer.

6. The filter of claim 1 , further comprising:
a third sub-filter connected in parallel between the first port and the second port, the third sub-filter comprising:
a piezoelectric layer attached either directly or via one or more intermediate layers to the substrate, the piezoelectric layer having portions that form a plurality of diaphragms spanning respective cavities of the third sub-filter; and
a conductor pattern at a surface of the piezoelectric layer, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms,
wherein a thickness of the piezoelectric layer of the third sub-filter is different from a thickness of the at least one piezoelectric layer of the first and second sub-filters.

7. The filter of claim 6 , wherein the thickness of the portion of the at least one piezoelectric layer of the first sub-filter is between 720 nm and 740 nm extending between a front surface and a back surface of the portion of the at least one piezoelectric layer of the first sub-filter; wherein the thickness of the portion of the at least one piezoelectric layer of the second sub-filter is between 752 nm and 772 nm extending between a front surface and a back surface of the portion of the at least one piezoelectric layer of the second sub-filter; and wherein the thickness of the piezoelectric layer of the third sub-filter is between 734 nm and 754 nm extending between a front surface and a back surface of the piezoelectric layer of the third sub-filter.

8. The filter of claim 6 , wherein each sub-filter further comprises:
three resonators connected in series between the first port and the second port; and
two coupling capacitors, each of which is connected between ground and a respective node between two of the resonators of the sub-filter.

9. The filter of claim 8 , further comprising:
a first low-edge resonator, from the three resonators, connected between the first port and ground;
a second low-edge resonator, from the three resonators, connected between the second port and ground;
wherein respective resonance frequencies of the first and second low-edge resonators are adjacent to a lower edge of a passband of the filter.

10. The filter of claim 9 , wherein:
two of the three resonators of each sub-filter are symmetrical in response;
the low-edge resonators have the same response;
each of the coupling capacitors is a metal-insulator-metal capacitor; and
the sub-filters and the low-edge resonators form a matrix filter having a contiguous passband formed by passbands of the sub-filters; and a center frequency of a passband of each sub-filter is different from a center frequency of any other sub-filter.

11. The filter of claim 6 , wherein:
the thickness of the portion of the at least one piezoelectric layer of the first sub-filter is thinner than the thickness of the portion of the at least one piezoelectric layer of the second sub-filter; and
the thickness of the portion of the at least one piezoelectric layer of the second sub-filter is thinner than the thickness of the piezoelectric layer of the third sub-filter.

12. A radio frequency filter, comprising:
a first sub-filter and a second sub-filter connected in parallel between a first port and a second port, the first sub-filters comprising:
a first piezoelectric layer attached either directly or via one or more intermediate layers to a first substrate of a first die, the first piezoelectric layer having first portions that form a first plurality of diaphragms over first respective cavities of the respective first sub-filter; and
a first conductor pattern at a surface of the first piezoelectric layer, the first conductor pattern including a first plurality of interdigital transducers (IDTs) of a first respective plurality of resonators, first interleaved fingers of each first IDT disposed on a first respective diaphragm of the first plurality of diaphragms;

the second sub-filters comprising:
a second piezoelectric layer attached either directly or via one or more intermediate layers to a second substrate of a second die, the second piezoelectric layer having second portions that form a second plurality of diaphragms over second respective cavities of the respective second sub-filter; and
a second conductor pattern at a surface of the second piezoelectric layer, the second conductor pattern including a second plurality of interdigital transducers (IDTs) of a second respective plurality of resonators, second interleaved fingers of each second IDT disposed on a second respective diaphragm of the second plurality of diaphragms; and

wherein a thickness of the portions of the first piezoelectric layer are thicker than a thickness of the portions of the second piezoelectric layer,
wherein the first port is an input of the filter, and the second port is an output of the filter, and
wherein the first and second piezoelectric layers and the first and second plurality of IDTs are configured such that radio frequency signals applied to the first and second plurality of IDTs excite primary shear acoustic modes in the first and second portions of the respective piezoelectric layers.

13. The filter of claim 12 , wherein the first piezoelectric layer is a same layer as the second piezoelectric layer.

14. The filter of claim 12 , wherein the first piezoelectric layer is a different layer than the second piezoelectric layer.

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Assignees

• Murata Manufacturing Co

Inventors

• Guyette Andrew
• Fenzi Neal
• Dyer Greg
• Mchugh Sean

Classifications

• H03H9/205 Primary

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/02031

  consisting of ceramic · CPC title

• H03H9/02157

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title