Light emitting device and production method and use thereof

Patent metadata

Field	Value
Publication number	US-11973163-B2
Application number	US-202318157237-A
Country	US
Kind code	B2
Filing date	Jan 20, 2023
Priority date	May 2, 2018
Publication date	Apr 30, 2024
Grant date	Apr 30, 2024

Abstract

A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

First claim

What is claimed is:

1. A light emitting device comprising:
an epitaxial structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, said second-type semiconductor layer having a second-type cladding sublayer and a second-type window sublayer, said active layer being made from aluminum gallium indium phosphide (AlGaInP) and disposed on said second-type semiconductor layer, said first-type semiconductor layer being disposed on said active layer opposite to said second-type semiconductor layer, and having a first-type window sublayer and a first-type cladding sublayer that are distal from and proximate to said active layer, respectively;
a first electrode disposed on an electrode placement side of said epitaxial structure, so that said first electrode is electrically connected with said first-type semiconductor layer; and
a second electrode disposed on said electrode placement side of said epitaxial structure, so that said second electrode is electrically connected with said second-type semiconductor layer, said second electrode being in ohmic contact with said second-type window sublayer.

2. The light emitting device as claimed in claim 1 , wherein said first-type semiconductor layer is made from a material selected from the group consisting of AlGaAs, AlGaInP, aluminum indium phosphide (AlInP), gallium phosphide (GaP), and combinations thereof.

3. The light emitting device as claimed in claim 1 , wherein said second-type semiconductor layer is made from a material selected from the group consisting of AlGaAs, AlGaInP, AlInP, GaP, and combinations thereof.

4. The light emitting device as claimed in claim 1 , wherein said second-type cladding sublayer and said second-type window sublayer that are proximate to and distal from said active layer, respectively, said second-type window sublayer being made from a material selected from the group consisting of AlGaAs, AlGaInP, and a combination thereof.

5. The light emitting device as claimed in claim 1 , wherein said second electrode is in one of a single-layered form and a multi-layered form, a contact portion of said second electrode in contact with said second-type window sublayer being made from one of gold (Au) and an Au-containing alloy.

6. The light emitting device as claimed in claim 5 , wherein said contact portion of said second electrode has a thickness ranging from 5 nm to 20 nm.

7. The light emitting device as claimed in claim 1 , wherein said epitaxial structure has a size of not larger than 300 μm×300 μm, said second-type cladding sublayer and said second-type window sublayer that are proximate to and distal from said active layer, respectively.

8. The light emitting device as claimed in claim 1 , further comprising a first metallic layer that is disposed over and in contact with said first electrode, and a second metallic layer that is disposed over and in contact with said second electrode, said first and second metallic layers being larger in surface area than said first and second electrodes, respectively.

9. The light emitting device as claimed in claim 8 , wherein said first and second metallic layers are reflective layers.

10. The light emitting device as claimed in claim 1 , wherein said second-type window sublayer has a doping concentration not less than 1×10 18 atoms/cm 3 .

11. The light emitting device as claimed in claim 1 , wherein said second-type window sublayer has a doping concentration ranging from 1×10 18 atoms/cm 3 to 2×10 18 atom s/cm 3 .

12. The light emitting device as claimed in claim 1 , wherein said second-type window sublayer has a doping concentration varying in a thickness direction thereof.

13. The light emitting device as claimed in claim 1 , wherein said second-type window sublayer has a thickness ranging from 2.5 μm to 3.5 μm.

14. The light emitting device as claimed in claim 1 , wherein some metal atoms in the second electrode diffuses into the second-type window sublayer.

15. A light emitting apparatus comprising at least one light emitting device as claimed in claim 1 .

16. The light emitting apparatus as claimed in claim 15 , wherein said epitaxial structure of said light emitting device has a size of not larger than 300 μm×300 μm, said second-type cladding sublayer and said second-type window sublayer that are proximate to and distal from said active layer of said epitaxial structure, respectively.

17. The light emitting apparatus as claimed in claim 15 , wherein said epitaxial structure of said light emitting device has a size of not larger than 300 μm×300 μm.

18. The light emitting apparatus as claimed in claim 15 , wherein said second-type semiconductor layer of said epitaxial structure further includes a second-type barrier sublayer disposed on said second-type cladding sublayer opposite to said second-type window sublayer.

19. The light emitting apparatus as claimed in claim 15 , wherein said second-type window sublayer has a doping concentration not less than 1×10 18 atoms/cm 3 .

Assignees

• Tianjin Sanan Optoelectronics Co Ltd

Inventors

• Tsai Chingyuan
• Wu Chun-Yi
• Li Fulong
• Wang Duxiang
• Wu Chaoyu
• Gao Wenhao
• Liu Xiaofeng
• Li Weihuan
• Shu Liming
• Liu Chao

Classifications

• H10H20/825 Primary

  containing nitrogen, e.g. GaN · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/0137 Primary

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/032

  of electrodes · CPC title