Magnetic field sensor with increased SNR

Patent metadata

Field	Value
Publication number	US-11971462-B2
Application number	US-202318298646-A
Country	US
Kind code	B2
Filing date	Apr 11, 2023
Priority date	Apr 29, 2015
Publication date	Apr 30, 2024
Grant date	Apr 30, 2024

Abstract

Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing. The improvements may be done by reducing parasitic effects, increasing sense element packing density, interleaving a Z-axis layout to reduce a subtractive effect, and optimizing an alignment between a Z-axis sense element and a flux guide, etc.

First claim

What is claimed is:

1. A magnetic field sensor, comprising:
a plurality of magnetoresistance sense elements coupled together as a first circuit to sense a magnetic field, wherein each magnetoresistance sense element of the plurality of magnetoresistance sense elements includes a first ferromagnetic layer and a second ferromagnetic layer separated by an insulating barrier layer, wherein portions of a first magnetoresistance sense element and a second magnetoresistance sense element are electrically connected,
wherein the first magnetoresistance sense element and a third magnetoresistance sense element of the plurality of magnetoresistance sense elements share a common ferromagnetic layer such that a first portion of the common ferromagnetic layer is above either the first ferromagnetic layer of the first magnetoresistance sense element or the first ferromagnetic layer of the third magnetoresistance sense element and a second portion of the common ferromagnetic layer is below the other of the first ferromagnetic layer of the first magnetoresistance sense element or the first ferromagnetic layer of the third magnetoresistance sense element.

2. The magnetic field sensor of claim 1 , further comprising:
at least one flux guide located between the first and second magnetoresistance sense elements, wherein the at least one flux guide is located above or below the first and second magnetoresistance sense elements.

3. The magnetic field sensor of claim 1 , further comprising a plurality of flux guides, and wherein the plurality of flux guides are located above or below the first and second magnetoresistance sense elements.

4. The magnetic field sensor of claim 1 , further comprising:
at least one flux guide located between the first and second magnetoresistance sense elements, wherein the at least one flux guide is located above or below the first and second magnetoresistance sense elements, and wherein the at least one flux guide includes a thin ferromagnetic material layer on both sides of the at least one flux guide.

5. The magnetic field sensor of claim 1 , wherein, when a magnetic field is sensed by the plurality of magnetoresistance sense elements, a sense current flows through the first ferromagnetic layer, the insulating barrier layer, and the second ferromagnetic layer of a magnetoresistance sense element.

6. The magnetic field sensor of claim 1 , further comprising:
at least one flux guide located between the first and second magnetoresistance sense elements, wherein the at least one flux guide is located above or below the first and second magnetoresistance sense elements, wherein the at least one flux guide is located symmetrically between the first and second magnetoresistance sense elements, and wherein a width of the at least one flux guide covers a whole width between the first and second magnetoresistance sense elements.

7. The magnetic field sensor of claim 1 , further comprising a plurality of flux guides, wherein the plurality of flux guides are located above or below the first and second magnetoresistance sense elements, and wherein at least one flux guide of the plurality of flux guides is located symmetrically between the first and second magnetoresistance sense elements.

8. The magnetic field sensor of claim 1 , further comprising:
at least one flux guide located between the first and second magnetoresistance sense elements, wherein the at least one flux guide is located above or below the first and second magnetoresistance sense elements, and wherein the at least one flux guide is located relatively closer to the first magnetoresistance sense element than to the second magnetoresistance sense element.

9. The magnetic field sensor of claim 1 , further comprising a plurality of flux guides, wherein the plurality of flux guides are located above or below the first and second magnetoresistance sense elements, and wherein at least one flux guide of the plurality of flux guides includes a high permeability magnetic material.

10. The magnetic field sensor of claim 1 , wherein the first ferromagnetic layer of each magnetoresistance sense element includes a magnetization direction free to rotate in a magnetic field, and wherein the second ferromagnetic layer of each magnetoresistance sense element includes a fixed magnetization direction.

11. The magnetic field sensor of claim 1 , wherein the plurality of magnetoresistance sense elements includes one or more tunneling magnetoresistance sense elements, giant magnetoresistance sense elements, and/or anisotropic magnetoresistance sense elements.

12. The magnetic field sensor of claim 1 , further comprising:
a conductive line coupling the first ferromagnetic layer of the first magnetoresistance sense element and the first ferromagnetic layer of the second magnetoresistance sense element; and
a second circuit comprising a plurality of current lines, wherein each current line of the plurality of current lines is adjacent to, above, or below a corresponding magnetoresistance sense element of the plurality of magnetoresistance sense elements.

13. The magnetic field sensor of claim 1 , further comprising:
a conductive line coupling the first ferromagnetic layer of the first magnetoresistance sense element and the first ferromagnetic layer of the second magnetoresistance sense element; and
a second circuit comprising a plurality of current lines, wherein each current line of the plurality of current lines is adjacent to, above, or below a corresponding magnetoresistance sense element of the plurality of magnetoresistance sense elements,
wherein at least one current line of the plurality of current lines is positioned at either a 45 degree cross angle or a 90 degree cross angle relative to a first ferromagnetic layer of a magnetoresistance sense element of the plurality of magnetoresistance sense elements.

14. The magnetic field sensor of claim 1 , further comprising:
at least one flux guide located between the first and second magnetoresistance sense elements, wherein the at least one flux guide includes a first flux guide and a second flux guide, wherein the first flux guide is located above the first and second magnetoresistance sense elements, and wherein the second flux guide is located below the first and second magnetoresistance sense elements.

15. A magnetic field sensor, comprising:
a plurality of magnetoresistance sense elements coupled together as a first circuit to sense a magnetic field, wherein each of the plurality of magnetoresistance sense elements includes a first ferromagnetic layer and a second ferromagnetic layer separated by an insulating barrier layer, wherein the plurality of magnetoresistance sense elements includes at least a first magnetoresistance sense element and a second magnetoresistance sense element located in a plane; and
a plurality of flux guides, wherein a first flux guide of the plurality of flux guides is located between the first and second magnetoresistance sense elements and above or below the first magnetoresistance sense element,
wherein the first magnetoresistance sense element and a third magnetoresistance sense element of the plurality of magnetoresistance sense elements are coupled via a first common ferromagnetic layer that extends between the first and third magnetoresistance sense elements,
wherein the second magnetoresistance sense element and a fourth magnetoresistance sense element of the plurality of magnetoresistance sense elements are coupled via a second common ferromagnetic layer that extends between the second and fourth magnetoresistance sense elements,
wherein the first common ferromagnetic layer an

Assignees

• Everspin Technologies Inc

Inventors

• Mather Phillip G
• Mohan Anuraag

Classifications

• G01R33/093 Primary

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title