Perovskite nanocrystalline particles and optoelectronic device using same
US-2017358757-A1 · Dec 14, 2017 · US
US11964994B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11964994-B2 |
| Application number | US-202017109668-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 2, 2020 |
| Priority date | Dec 2, 2019 |
| Publication date | Apr 23, 2024 |
| Grant date | Apr 23, 2024 |
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The present disclosure relates to a composition that includes a perovskite of A 2 BX 4 , where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R 1 includes a first carbon chain having between 2 and 5 carbon atoms, R 2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R 3 includes a third carbon chain.
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What is claimed is: 1. A composition comprising: a perovskite comprising A 2 BX 4 , wherein: A comprises an R-form of a chiral molecule comprising at least one of or an S-form of the chiral molecule, B comprises a cation, and X comprises an anion. 2. The composition of claim 1 , wherein the composition demonstrates spin-polarization of charge transport when a current is injected into the composition. 3. The composition of claim 1 , wherein B comprises at least one of lead, tin, or germanium. 4. The composition of claim 1 , wherein X comprises a halogen. 5. The composition of claim 1 , wherein the perovskite comprises at least one of R-A 2 PbI 4 , S-A 2 PbI 4 , R-A 2 SnI 4 , S-A 2 SnI 4 , R-A 2 Pb 1-x Sn x I 4 , S-A 2 Pb 1-x Sn x I 4 , wherein 0<x<1. 6. The composition of claim 1 , wherein: the perovskite is in a form comprising a first two-dimensional (2D) network and a second 2D network, the first 2D network comprises BX 4 , the second 2D network comprises BX 4 , and a plurality of the chiral molecule forms a layer positioned between the first 2D network and the second 2D network. 7. The composition of claim 1 , wherein the perovskite is in a shape of a film having a thickness between about 10 nm and about 100 nm. 8. The composition of claim 7 , wherein the film has a roughness between about 1 nm and about 5 nm. 9. The composition of claim 1 , wherein the perovskite has a bandgap between about 2.2 eV and about 3.0 eV. 10. The composition of claim 1 , wherein the perovskite is capable of demonstrating chiral induced spin selectivity. 11. The composition of claim 8 , wherein the film of the perovskite is polycrystalline. 12. A device comprising: a ferromagnetic (FM) electrode; a non-FM electrode; and a perovskite film comprising A 2 BX 4 , wherein: the perovskite film is positioned between the FM electrode and the non-FM electrode, A comprises an R-form of a chiral molecule comprising at least one of or an S-form of the chiral molecule, B comprises a cation, and X comprises an anion. 13. The device of claim 12 configured to operate as at least one of an FM electrode, a spin filter, a spin polarized LED, a spin polarized laser, an op spin-valve, a spin-diode, a spin-transistor, a chiral-light detector, a switchable optical memory, a polarization selective optical multiplexor, or an ultrafast modulator. 14. The device of claim 12 , wherein the non-FM electrode comprises a transparent conducting oxide (TCO). 15. The device of claim 14 , wherein the TCO comprises indium tin oxide. 16. The device of claim 12 , wherein the FM electrode comprises nickel and iron. 17. The device of claim 16 , wherein the FM electrode has a thickness between about 1 nm and about 10 nm. 18. The device of claim 12 , further comprising: a metal layer, wherein: the FM electrode is positioned between the metal layer and the perovskite film. 19. The device of claim 18 , wherein the metal layer is a gold layer. 20. The device of claim 12 , wherein the perovskite film demonstrates spin-polarization of charge transport when a current is injected into the perovskite film.
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