Switching device and resistance variable device

Patent metadata

Field	Value
Publication number	US-11963459-B2
Application number	US-202117469778-A
Country	US
Kind code	B2
Filing date	Sep 8, 2021
Priority date	Sep 18, 2020
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1−A) (0.5+B), Y=A (0.5+B), and W=1−X−Y, where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾<A, and −0.06≤B and Y≤0.45 are satisfied when ⅓≤A≤¾.

First claim

What is claimed is:

1. A switching device, comprising: a first electrode; a second electrode; and a switching layer disposed between the first electrode and the second electrode, wherein
the switching layer contains a material containing a first cation element Z, tellurium, and nitrogen, wherein
the material contains 5 atomic % or more of each of the first cation element Z, tellurium, and nitrogen, and
when an atomic ratio of tellurium is X, an atomic ratio of nitrogen is Y, an atomic ratio of the first cation element Z is W, a ratio of Z 2 Te 3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of the first cation element Z, tellurium, and nitrogen is A, and a change amount in the atomic ratio of nitrogen from the straight line connecting Z 2 Te 3 and ZN in the ternary phase diagram is B, the material has a composition satisfying:
X= 1.2(1− A )(0.5+ B )  General equation 1:

Y=A (0.5+ B )  General equation 2:

W= 1− X−Y   General equation 3:

where −0.06≤B≤0.06 is satisfied when ⅓>A and ¾<A, and −0.06≤B and Y≤0.45 are satisfied when ⅓≤A≤¾.

2. The switching device according to claim 1 , wherein
the first cation element Z contains at least one selected from a group consisting of aluminum, gallium, indium, antimony, and bismuth.

3. The switching device according to claim 1 , wherein
the first cation element Z contains aluminum.

4. The switching device according to claim 1 , wherein
the material further contains at least one selected from a group consisting of boron, carbon, and phosphorus.

5. The switching device according to claim 1 , wherein
the material further contains at least one selected from a group consisting of boron, carbon, and phosphorus in a range of 10 atomic % or less.

6. The switching device according to claim 1 , wherein
at least part of the switching layer has an amorphous structure.

7. A resistance variable device, comprising:
the switching device according to claim 1 ; and
a resistance variable layer electrically connected to the switching layer of the switching device.

8. The resistance variable device according to claim 7 , wherein
the first cation element Z contains at least one selected from a group consisting of aluminum, gallium, indium, antimony, and bismuth.

9. The resistance variable device according to claim 7 , wherein
the first cation element Z contains aluminum.

10. The resistance variable device according to claim 7 , wherein
the material further contains at least one selected from a group consisting of boron, carbon, and phosphorus.

Assignees

• Kioxia Corp

Inventors

• Takehira Hiroshi
• Komatsu Katsuyoshi
• Daibou Tadaomi
• Kawai Hiroki
• Ito Yuichi

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C19/0841

  using electric current · CPC title

• H10N50/80

  Constructional details · CPC title