Diamond-like carbon coating for passive and active electronics

Patent metadata

Field	Value
Publication number	US-11961896-B2
Application number	US-202117474879-A
Country	US
Kind code	B2
Filing date	Sep 14, 2021
Priority date	Sep 14, 2021
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp2 and sp3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.

First claim

Having thus described various embodiments of the invention, what is claimed as new and desired to be protected by Letters Patent includes the following:

1. A transistor, comprising:
a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
a source terminal connected to the first end-region;
a drain terminal connected to the second end-region,
wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC);
a DLC layer disposed on top of and extending between the source terminal and the drain terminal; and
a gate terminal disposed on top of the DLC layer,
wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.

2. The transistor of claim 1 , wherein the DLC layer is doped with at least one of iron, silver, copper, nickel, or titanium.

3. The transistor of claim 1 , wherein the DLC layer is doped with silicon.

4. The transistor of claim 1 , wherein the DLC layer comprises a thickness in a range of 5 nanometers to 5 microns.

5. The transistor of claim 1 , wherein the gate terminal comprises polysilicon.

6. The transistor of claim 1 , wherein an sp 2 /sp 3 ratio of the semiconducting DLC is configured for electricity to pass through the semiconducting DLC via hopping conductivity.

7. The transistor of claim 1 , wherein the DLC layer comprises a hydrogen content in a range of 20% to 35%.

8. A transistor, comprising:
a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
a source terminal connected to the first end-region;
a drain terminal connected to the second end-region,
wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
a DLC layer disposed on top of and extending between the source terminal and the drain terminal; and
a gate terminal comprising a refractory metal that is disposed on top of the DLC layer,
wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.

9. The transistor of claim 8 , wherein the DLC layer is doped with at least one of iron, silver, copper, nickel, or titanium.

10. The transistor of claim 8 , wherein the at least one n-type dopant comprises at least one of phosphorous, arsenic, bismuth, or antimony.

11. The transistor of claim 8 , wherein an sp 2 /sp 3 ratio of the semiconducting DLC is configured for electricity to pass through the semiconducting DLC via hopping conductivity.

12. The transistor of claim 8 , wherein the DLC layer comprises a hydrogen content in a range of 20% to 35%.

13. A transistor, comprising:
a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
a source terminal connected to the first end-region;
a drain terminal connected to the second end-region,
wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
a DLC layer disposed on top of and extending between the source terminal and the drain terminal; and
a gate terminal comprising a silicide that is disposed on top of the DLC layer,
wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.

14. The transistor of claim 13 , wherein the DLC layer is doped with at least one of iron, silver, copper, nickel, or titanium.

15. The transistor of claim 13 , wherein the at least one n-type dopant comprises at least one of phosphorous, arsenic, bismuth, or antimony.

16. The transistor of claim 13 , wherein an sp 2 /sp 3 ratio of the semiconducting DLC is configured for electricity to pass through the semiconducting DLC via hopping conductivity.

17. The transistor of claim 13 , wherein the DLC layer comprises a hydrogen content in a range of 20% to 35%.

18. The transistor of claim 13 , wherein the DLC layer is doped with silicon.

19. A transistor, comprising:
a body region having a first end-region and a second end-region, the body region comprising at least one p-type dopant;
a source terminal connected to the first end-region;
a drain terminal connected to the second end-region,
wherein the source terminal and the drain terminal comprise at least one n-type dopant mixed with semiconducting diamond-like carbon (DLC)
a DLC layer disposed on top of and extending between the source terminal and the drain terminal; and
a gate terminal comprising a silicide that is disposed on top of the DLC layer,
wherein the DLC layer electrically isolates the gate terminal from the source terminal and the drain terminal.

20. The transistor of claim 19 , wherein the DLC layer is doped with silicon.

Assignees

• Honeywell Federal Mfg & Tech Llc

Inventors

• Timpson Erik Joseph
• Schlitzer Justin M
• Selter Thomas Matthew
• Walsh Michael

Classifications

• H10D64/661

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation (having lateral variation in the gate structure H10D64/671) · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• H10D8/50

  PIN diodes · CPC title

• H10D12/411

  Insulated-gate bipolar transistors [IGBT] · CPC title

• H10D10/821

  Vertical heterojunction BJTs · CPC title