Color filter substrate and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11961853-B2
Application number	US-202117298630-A
Country	US
Kind code	B2
Filing date	May 28, 2021
Priority date	Feb 10, 2021
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

A color filter substrate and a manufacturing method thereof are provided. A plurality of grating structures, a sensor unit and a switch unit are integrated on the color filter substrate. As such, in addition to an original light-filtering function, the color filter substrate is given functions of polarizing light rays and sensing light rays.

First claim

The invention claimed is:

1. A color filter substrate, comprising a base substrate, the color filter substrate further comprising:
a plurality of color filters, disposed on the base substrate;
a plurality of grating structures, disposed at a side of the base substrate, configured to generate polarized light;
a sensor unit, disposed at a side of the base substrate, configured to generate an electric current signal after irradiated by a laser; and
a switch unit, disposed at a side of the base substrate as the same as the sensor unit and connected to the sensor unit, configured to receive the electric current signal and allow the electric current signal to pass through the switch unit in response to the switch unit being in a switched-on state,
wherein the both the sensor unit and the switch unit are thin-film transistors, and the plurality of grating structures, the sensor unit and the switch unit are integrated on the color filter substrate, wherein the sensor unit at least comprises a first gate electrode, a first source electrode and a first drain electrode, each of the grating structures comprises a first grating structure and a second grating structure, the second grating structure stacks on a corresponding first grating structure, a material of the first grating structure and a material of the first gate electrode are a same material and belong to a same film layer, and a material of the second grating structure and a material of the first source electrode or the first drain electrode are a same material and belong to a same film layer.

2. The color filter substrate according to claim 1 , wherein the switch unit comprises a second source electrode and a second drain electrode, the first drain electrode is connected to a connecting line connected to an external power source, the first source electrode is connected to the second source electrode, and the second drain electrode is connected to a readout line configured to read out the electric current signal.

3. The color filter substrate according to claim 1 , wherein the switch unit at least comprises a second gate electrode, a material of the first gate electrode and the second gate electrode is a transparent conductive material, and the color filter substrate further comprises:
a light shielding layer, wherein the light shielding layer and the switch unit are disposed at opposite sides of the base substrate, and the light shielding layer is disposed corresponding to the second gate electrode and is configured to prevent the laser from irradiating the switch unit to affect a switch function of the switch unit.

4. The color filter substrate according to claim 1 , further comprising:
an insulating layer, covering the plurality of grating structures, configured to insulate the grating structures.

5. The color filter substrate according to claim 1 , wherein the plurality of color filters are disposed at a first side of the base substrate, the plurality of grating structures, the sensor unit and the switch unit are disposed at a second side of the base substrate, and the first side is opposite to the second side.

6. The color filter substrate according to claim 1 , wherein the plurality of color filters, the plurality of grating structures, the sensor unit and the switch unit are disposed at a same side of the base substrate.

7. A color filter substrate, comprising a base substrate, the color filter substrate further comprising:
a plurality of grating structures, disposed at a side of the base substrate, configured to generate polarized light;
a sensor unit, disposed at a side of the base substrate, configured to generate an electric current signal after irradiated by a laser; and
a switch unit, disposed at a side of the base substrate as the same as the sensor unit and connected to the sensor unit, configured to receive the electric current signal and allow the electric current signal to pass through the switch unit in response to the switch unit being in a switched-on state,
wherein the plurality of grating structures, the sensor unit and the switch unit are disposed on the color filter substrates
wherein the sensor unit is a thin-film transistor and at least comprises a first gate electrode, a first source electrode and a first drain electrode, each of the grating structures comprises a first grating structure and a second grating structure, the second grating structure stacks on a corresponding first grating structure, a material of the first grating structure and a material of the first gate electrode are a same material and belong to a same film layer, and a material of the second grating structure and a material of the first source electrode or the first drain electrode are a same material and belong to a same film layer.

8. The color filter substrate according to claim 7 , wherein both the sensor unit and the switch unit are thin-film transistors, the switch unit comprises a second source electrode and a second drain electrode, the first drain electrode is connected to a connecting line connected to an external power source, the first source electrode is connected to the second source electrode, and the second drain electrode is connected to a readout line configured to read out the electric current signal.

9. The color filter substrate according to claim 7 , wherein both the sensor unit and the switch unit are thin-film transistors and the switch unit at least comprises a second gate electrode, a material of the first gate electrode and the second gate electrode is a transparent conductive material, and the color filter substrate further comprises:
a light shielding layer, wherein the light shielding layer and the switch unit are disposed at opposite sides of the base substrate, and the light shielding layer is disposed corresponding to the second gate electrode and is configured to prevent the laser from irradiating the switch unit to affect a switch function of the switch unit.

10. The color filter substrate according to claim 7 , further comprising:
an insulating layer, covering the plurality of grating structures, configured to insulate the grating structures.

11. The color filter substrate according to claim 7 , further comprising a plurality of color filters disposed on the base substrate, wherein the plurality of color filters are disposed at a first side of the base substrate, the plurality of grating structures, the sensor unit and the switch unit are disposed at a second side of the base substrate, and the first side is opposite to the second side.

12. The color filter substrate according to claim 7 , further comprising a plurality of color filters disposed on the base substrate, wherein the plurality of color filters, the plurality of grating structures, the sensor unit and the switch unit are disposed at a same side of the base substrate.

13. A method for manufacturing a color filter substrate, the method comprising the steps of:
forming a plurality of grating structures, a sensor unit and a switch unit at a side of a base substrate,
wherein the sensor unit is configured to generate an electric current signal after irradiated by a laser, the switch unit is connected to the sensor unit and is configured to receive the electric current signal and allow the electric current signal to pass through the switch unit in response to the switch unit being in a switched-on state, and the plurality of grating structures are configured to generate polarized light; and
wherein the plurality of grating structures, the sensor unit and the switch unit are disposed on the color filter substrate,
wherein the sensor unit is a thin-film transistor and at least comprises a first gate electrode, a firs

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Wang Haijun

Classifications

• H10F39/103 Primary

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title

• H01L27/1443 Primary

  Electricity · mapped topic

• G02F1/133514

  Colour filters · CPC title

• G06F3/042 Primary

  by opto-electronic means · CPC title

• G02F1/1333 Primary

  Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) · CPC title