Precursor supply unit, substrate processing system, and method of fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11959170-B2
Application number	US-202117333820-A
Country	US
Kind code	B2
Filing date	May 28, 2021
Priority date	Aug 18, 2017
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
providing a precursor and a carrier gas on a substrate in a chamber; and
providing a reaction gas, which is reacted with the precursor, on the substrate to form a thin film on the substrate through reaction with the precursor,
wherein the providing the precursor and the carrier gas comprises:
supplying the carrier gas into a precursor passage space between a supporting membrane of an inner container and an inner bottom surface of an outer container, the inner container containing a precursor source;
providing the carrier gas to the precursor source on the supporting membrane through pores of the supporting membrane; and
obtaining the precursor through the pores using the carrier gas, without a reduction in supply pressures of the carrier gas and the precursor according to consumption of the precursor source in the inner container.

2. The method of claim 1 , wherein the pores of the supporting membrane allow the carrier gas and the precursor to pass therethrough, and the supporting membrane supports the precursor source to separate a source consumption space on the precursor source from the precursor passage space.

3. The method of claim 2 , wherein the providing, the precursor and the carrier gas further comprises exhausting the precursor and the carrier gas in the precursor passage space to supply the precursor and the carrier gas into the chamber.

4. The method of claim 1 , further comprising providing a purge gas in the chamber, after the providing the precursor or after the providing the reaction gas.

5. The method of claim 1 , wherein forming the thin film comprises depositing an atomic layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Soyoung
• Lee Hyunjae
• Kim Ik Soo
• Lee Jang-Hee

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• B01B1/005

  Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions · CPC title

• C23C16/4485

  by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title