Method of producing guest-free silicon clathrate, apparatus for producing guest-free silicon clathrate

Patent metadata

Field	Value
Publication number	US-11955628-B2
Application number	US-202217729725-A
Country	US
Kind code	B2
Filing date	Apr 26, 2022
Priority date	Jun 4, 2021
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

[Problem] To improve productivity of guest-free silicon clathrates[Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.

First claim

The invention claimed is:

1. A method of producing a guest-free silicon clathrate, comprising:
a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound;
a stirring step of stirring the silicon clathrate compound contained in a container, performed by using a protrusion on an inner wall surface of the container;
a guest removing step of irradiating the silicon clathrate compound contained in the container with an electromagnetic wave from an outside of the container to remove the guest while suctioning gas inside the container and while rotating the container, wherein the container is made of transparent quartz glass; and
an adsorbing step of adsorbing the removed guest using a cooling member and an adsorbent.

2. The method of producing a guest-free silicon clathrate according to claim 1 , further comprising:
mixing the silicon clathrate compound and a Li source after the synthesizing step and synthesizing a silicon clathrate compound containing Li;
forming voids by removing Li from the silicon clathrate compound containing Li to obtain a silicon clathrate compound having the voids; and
performing the guest removing step on the silicon clathrate compound having the voids.

Assignees

• Toyota Motor Co Ltd

Inventors

• Abe Nobuhira

Classifications

• H01M4/386 Primary

  Silicon or alloys based on silicon · CPC title

• B01J19/122

  Incoherent waves (gamma-radiation B01J19/082) · CPC title

• B01J19/28

  Moving reactors, e.g. rotary drums (B01J19/08 takes precedence) · CPC title

• C01B33/037 Primary

  Purification (by zone-melting C30B13/00) · CPC title

• B01J2219/1203

  Incoherent waves · CPC title