Automatic adjustment method and automatic adjustment device of beam of semiconductor apparatus, and training method of parameter adjustment model

Patent metadata

Field	Value
Publication number	US-11955309-B2
Application number	US-202117369077-A
Country	US
Kind code	B2
Filing date	Jul 7, 2021
Priority date	May 26, 2021
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

First claim

What is claimed is:

1. An automatic adjustment method of a beam of a semiconductor apparatus, comprises:
generating the beam by the semiconductor apparatus;
obtaining a wave curve of the beam;
segmenting the wave curve into a plurality of sections;
obtaining a slope of each of the sections;
obtaining a plurality of environmental factors of the semiconductor apparatus; and
analyzing at least one parameter adjustment command of the semiconductor apparatus through a parameter adjustment model according to the slopes and the environmental factors.

2. The automatic adjustment method according to claim 1 , wherein a quantity of the sections is identical to a quantity of magnetic fields of the semiconductor apparatus.

3. The automatic adjustment method according to claim 1 , wherein the sections have identical length.

4. The automatic adjustment method according to claim 1 , wherein each of the environmental factors affects the beam.

5. The automatic adjustment method according to claim 1 , wherein a quality of at least one parameter adjustment command is pleural.

6. The automatic adjustment method according to claim 1 , wherein the at least one parameter adjustment command is an upward adjustment command or a downward adjustment command.

7. A automatic adjustment device of a beam of a semiconductor apparatus, comprising:
an input unit, configured to obtain a wave curve of the beam and a plurality of environmental factors of the semiconductor apparatus;
a segmentation unit, configured to segment the wave curve into a plurality of sections;
a calculation unit, configured to calculate a slope of each of the sections; and
a parameter adjustment model, configured to analyze at least one parameter adjustment command of the semiconductor apparatus according to the slopes and the environmental factors.

8. The automatic adjustment device according to claim 7 , wherein a quantity of the sections is identical to a quantity of magnetic fields of the semiconductor apparatus.

9. The automatic adjustment device according to claim 7 , wherein the sections have identical length.

10. The automatic adjustment device according to claim 7 , wherein each of the environmental factors affects the beam.

11. The automatic adjustment device according to claim 7 , wherein a quantity of at least one parameter adjustment command is pleural.

12. The automatic adjustment device according to claim 7 , wherein the at least one parameter adjustment command is an upward adjustment command or a downward adjustment command.

13. A training method of a parameter adjustment model of a semiconductor apparatus, wherein the semiconductor apparatus has a beam, and the training method comprises:
obtaining a plurality of environmental factors of the semiconductor apparatus;
obtaining a parameter adjustment command of the semiconductor apparatus;
generating the beam by the semiconductor apparatus according to the parameter adjustment command;
obtaining a wave curve of the beam;
segmenting the wave curve into a plurality of sections;
obtaining a slope of each of the sections; and
training the parameter adjustment model according to the environmental factors, the slopes and the parameter adjustment command.

14. The training method according to claim 13 , wherein a quantity of sections is identical to a quantity of magnetic fields of the semiconductor apparatus.

15. The training method according to claim 13 , wherein the sections have identical length.

16. The training method according to claim 13 , wherein each of the environmental factors affects the beam.

17. The training method according to claim 13 , wherein a quantity of the at least one parameter adjustment command is pleural.

18. The training method according to claim 13 , wherein the at least one parameter adjustment command is an upward adjustment command or a downward adjustment command.

19. The training method according to claim 13 , wherein in the step of training the parameter adjustment model, reinforcement learning reward or loss is assigned according to gentleness of the slopes of the sections.

Assignees

• United Microelectronics Corp

Inventors

• Li Zheng-Yang
• Kuo Chian-Chen
• Lu yi-cheng
• Kung Ji-Fu

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H01J37/08 Primary

  Ion sources; Ion guns · CPC title

• H01J27/18

  with an applied axial magnetic field · CPC title

• H01J37/302 Primary

  Controlling tubes by external information, e.g. program control (H01J37/304 takes precedence) · CPC title