Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

Patent metadata

Field	Value
Publication number	US-11953833-B2
Application number	US-202016843232-A
Country	US
Kind code	B2
Filing date	Apr 8, 2020
Priority date	Oct 11, 2017
Publication date	Apr 9, 2024
Grant date	Apr 9, 2024

Abstract

A compound represented by Formula (1). [In the formula, X represents a halogen atom or an alkoxy group, R 1 represents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2-1), and a group represented by Formula (R2-2), R 2 represents a group represented by Formula (R2-1) or (R2-2), n0 represents an integer of 0 or greater, n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5.]

First claim

The invention claimed is:

1. A compound represented by Formula (1)

[in the formula, X represents a halogen atom or an alkoxy group, R 1 represents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2-1), and a group represented by Formula (R2-2), R 2 represents a group represented by Formula (R2-1) or (R2-2), n0 represents an integer of 0 or greater, n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5]

[in the formulae, R 21 and R 22 each independently represents an alkyl group having 1 to 5 carbon atoms, n represents a natural number, and the wavy line represents a bonding site].

2. The compound according to claim 1 ,
wherein R 21 or R 22 represents any of a methyl group, an isopropyl group, or a tert-butyl group.

3. A substrate for pattern formation, which has a surface chemically modified by the compound according to claim 1 .

4. A photodegradable coupling agent formed of the compound according to claim 1 .

5. A pattern formation method of forming a pattern on a surface of an object to be treated, the method comprising:
chemically modifying the surface to be treated using the compound according to claim 1 ;
irradiating the chemically modified surface to be treated with light having a predetermined pattern to generate a latent image formed of a hydrophilic region and a water-repellent region; and
disposing a pattern-forming material in the hydrophilic region or the water-repellent region.

6. The pattern formation method according to claim 5 ,
wherein the predetermined pattern corresponds to a circuit pattern for an electronic device.

7. The pattern formation method according to claim 5 ,
wherein the pattern-forming material contains a conductive material, a semiconductor material, or an insulating material.

8. The pattern formation method according to claim 7 ,
wherein the conductive material is formed of a conductive fine particle dispersion liquid.

9. The pattern formation method according to claim 7 ,
wherein the semiconductor material is formed of an organic semiconductor material dispersion liquid.

10. A pattern formation method of forming a pattern on a surface of an object to be treated, the method comprising:
chemically modifying the surface to be treated using the compound according to claim 1 ;
irradiating the chemically modified surface to be treated with light having a predetermined pattern to generate a latent image formed of a hydrophilic region and a water-repellent region; and
disposing a catalyst for electroless plating in the hydrophilic region and performing electroless plating.

11. The pattern formation method according to claim 5 ,
wherein the object is a substrate having flexibility.

12. The pattern formation method according to claim 5 ,
wherein the object is formed of a resin material.

13. The pattern formation method according to claim 5 ,
wherein the light includes light having a wavelength included in a range of 200 nm to 450 nm.

14. A transistor production method of producing a transistor which includes a gate electrode, a source electrode, and a drain electrode, the method comprising:
forming at least one electrode among the gate electrode, the source electrode, and the drain electrode using the pattern formation method according to claim 5 .

Assignees

• Nikon Corp
• Univ Kanagawa

Inventors

• Kawakami Yusuke
• Yamaguchi Kazuo
• Itou Michiko

Classifications

• H10K10/82

  Electrodes · CPC title

• G03F7/0755 Primary

  Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence) · CPC title

• C07F7/0838 Primary

  Compounds with one or more Si-O-Si sequences (compounds with a ring containing only alternating Si and O atoms, i.e. cyclosilanes C07F7/21) · CPC title

• C07F7/1804

  Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title

• C23C18/204

  Radiation, e.g. UV, laser · CPC title