Additive manufacturing of active devices using dielectric, conductive and magnetic materials
US-10254499-B1 · Apr 9, 2019 · US
US11951542B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11951542-B2 |
| Application number | US-202117223120-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 6, 2021 |
| Priority date | Apr 6, 2021 |
| Publication date | Apr 9, 2024 |
| Grant date | Apr 9, 2024 |
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The presently disclosed subject matter relates to multi-material electrical contacts, and methods of making multi-material electrical contact comprising a functionally graded monolithic structure, having a first metal and a second metal, an amount of the second metal as compared to an amount of the first metal increases with distance in the structure from a first surface to a second opposing surface of the structure such that the second metal content increases continuously or incrementally throughout the height of the electrical contact.
Opening claim text (preview).
What is claimed is: 1. A method of forming an electrical contact comprising a functionally graded monolithic structure, the method comprising: operating at least one material feeder to release a feed of a first metal selected from a group consisting of copper, silver, aluminum, gold, platinum, and combinations thereof, and a second metal selected from a group consisting of aluminum oxide, chromium, chromium carbide, tungsten, tungsten carbide, molybdenum, molybdenum carbide, vanadium, vanadium carbide, and combinations thereof, wherein the first and second metals are each in a solid state and a powder form, and the second metal has a higher melting temperature as compared to a melting temperature of the first metal, and wherein the melting temperatures of the first and second metals differ by at least 1400° F.; depositing the first metal and second metal on a substrate by applying a compressed gas to the first and second metals to eject the first and second metals toward the substrate, wherein the depositing is performed under a pressure sufficient to form a solid state bond between the first and second metals, and wherein the first and second metals are ejected onto the substrate at an angle between 75° to 105°; and forming an electrical contact comprising a functionally graded monolithic structure, wherein an amount of the second metal as compared to an amount of the first metal increases with distance in the structure from a first surface of the structure to a second opposing surface of the structure such that the second metal content increases continuously or incrementally throughout height of the electrical contact, while maintaining the structure at a temperature that is below the melting temperature of both the first and second metals, keeping the first and second metals in a solid state. 2. The method of claim 1 , further comprising: combining the first and second metals by mixing; and placing the combined metals in the same material feeder. 3. The method of claim 1 , wherein: the at least one material feeder comprises a first material feeder and a second material feeder; the first material feeder is operated to release the feed of the first metal, and the second material feeder is operated to release the feed of the second metal; and the first and second metals are mixed when the metals are ejected by applying the compressed gas. 4. The method of claim 1 , wherein the compressed gas comprises a primary gas selected from the group consisting of helium, nitrogen, compressed air, hydrogen or combination thereof. 5. The method of claim 1 , wherein the method is conducted in a cold spray additive manufacturing device. 6. The method of claim 5 , wherein the released metals are ejected toward the substrate through a cold spray system nozzle. 7. The method of claim 6 , wherein the at least one material feeder is located upstream of the cold spray system nozzle. 8. The method of claim 6 , wherein the at least one material feeder releases at least one of the first or second metals into the cold spray system nozzle. 9. The method of claim 5 , wherein the pressure under which the released first and second metals are ejected toward the substrate changes when the location of the at least one material feeder is changed. 10. The method of claim 1 , wherein the first and second metals each have a particle size of from 5 microns to 120 microns. 11. The method of claim 1 , wherein at least one of the following is varied during an operating step: a ratio of a volume or weight of the first metal to a volume or weight of the second metal; or a ratio of average or mean particle size of the powder of the first metal to average or mean particle size of the powder of the second metal. 12. The method of claim 1 , wherein a composition of the metal in the at least one material feeder is changed during an operating step. 13. The method of claim 1 , wherein a composition of the metal in the at least one material feeder is controlled by a computer program. 14. The method of claim 1 , wherein the electrical contact is formed within a period of time of between 2 minutes and 25 minutes. 15. The method of claim 1 , wherein the first metal has an electrical conductivity of at least 25 millisiemens per meter. 16. The method of claim 1 , wherein: the first metal comprises a soft metal selected from the group consisting of copper, silver, aluminum, gold, platinum, or a combination thereof, and the second metal has a constituent that is an arc resistance particle. 17. The method of claim 16 , wherein the second metal comprises a hard metal selected from the group consisting of chromium, chromium carbide, tungsten, tungsten carbide, molybdenum, molybdenum carbide, vanadium, vanadium carbide, aluminum oxide, and a combination thereof.
Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS] · CPC title
for changing the material composition, e.g. by mixing · CPC title
Processes of additive manufacturing · CPC title
Pre-treatment · CPC title
Products made by additive manufacturing · CPC title
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