Film bulk acoustic resonator package with thin film sealing structure and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11949401-B2
Application number	US-202117202802-A
Country	US
Kind code	B2
Filing date	Mar 16, 2021
Priority date	Jul 30, 2020
Publication date	Apr 2, 2024
Grant date	Apr 2, 2024

Abstract

A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.

First claim

What is claimed is:

1. A film bulk acoustic resonator (FBAR) package with a thin film sealing structure, comprising:
a substrate;
an FBAR formed on the substrate and having a bottom electrode, a piezoelectric layer, and a top electrode;
a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR;
a PR (photo-resist) film supportedly located on tops of the inner pad electrodes;
a sealing layer stackedly formed on top of the PR film; and
outer pad electrodes connected to the inner pad electrodes through vias penetrating the PR film and the sealing layer.

2. The FBAR package according to claim 1 , wherein the sealing layer comprises a plurality of thin film gas barriers.

3. The FBAR package according to claim 1 , further comprising a dam formed on the outsides of the inner pad electrodes to surround the entire package.

4. The FBAR package according to claim 3 , wherein the dam is made of the same material as the inner pad electrodes.

5. The FBAR package according to claim 3 , wherein the dam supports the PR film and the sealing layer together at the same height as the inner pad electrodes.

6. The FBAR package according to claim 2 , wherein at least neighboring thin film gas barriers of the plurality of thin film gas barriers are made of different kinds of materials from each other.

7. The FBAR package according to claim 2 , wherein the last thin film gas barrier of the plurality of thin film gas barriers has the highest degree of hydrophobicity.

8. The FBAR package according to claim 2 , wherein the last thin film gas barrier located on the topmost position of the plurality of thin film gas barriers is coated with a hydrophobic material.

9. The FBAR package according to claim 2 , wherein the sealing layer comprises at least one metal thin film gas barrier, and the vias penetrating the PR film and the sealing layer comprise insulating layers formed on the inner peripheral surfaces thereof so as to connect the inner pad electrodes and the outer pad electrodes.

10. The FBAR package according to claim 1 , further comprising a plurality of FBARS and an inner pad electrode located between the outer pad electrodes in such a manner as to be not connected to any outer pad electrode on the section traversing at least two or more FBARs of the plurality of FBARs.

Assignees

• Wisol Co Ltd

Inventors

• Jang Jin Nyoung
• Koutsaroff Ivoyl P

Classifications

• H03H9/105 Primary

  the enclosure being defined by a cover cap mounted on an element forming part of the BAW device · CPC title

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/0514

  consisting of mounting pads or bumps · CPC title

• H03H9/173

  Air-gaps · CPC title

• H03H2003/021

  the resonators or networks being of the air-gap type · CPC title