Dielectric material, device comprising dielectric material, and method of preparing dielectric material

Patent metadata

Field	Value
Publication number	US-11946154-B2
Application number	US-202017126902-A
Country	US
Kind code	B2
Filing date	Dec 18, 2020
Priority date	Dec 30, 2019
Publication date	Apr 2, 2024
Grant date	Apr 2, 2024

Abstract

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

First claim

What is claimed is:

1. A dielectric material comprising:
a layered perovskite compound comprising a material phase of at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase,
wherein a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. in a range of about −15 percent (%) to about 15%, and
a permittivity is 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

2. The dielectric material of claim 1 , wherein the layered perovskite compound comprising the Dion-Jacobson phase is represented by Formula 1:
AB 2 C n−3 D n O 3n+1   (Formula 1)

wherein, in Formula 1,
A includes a monovalent element,
B includes a divalent element,
C includes a monovalent element,
D includes a pentavalent element, and
n is an integer from 3 to 6.

3. The dielectric material of claim 1 , wherein A and C in Formula 1 each independently include at least one of sodium (Na), potassium (K), and rubidium (Rb).

4. The dielectric material of claim 1 , wherein B in Formula 1 includes at least one of calcium (Ca), strontium (Sr), and barium (Ba).

5. The dielectric material of claim 1 , wherein D in Formula 1 includes at least one of niobium (Nb), vanadium (V), and tantalum (Ta).

6. The dielectric material of claim 1 , wherein the layered perovskite compound comprising the Dion-Jacobson phase is represented by Formula 2:
ACa 2 C n−3 Nb n O 3n+1   (Formula 2)

wherein, in Formula 2,
A includes at least one of Na, K, and Rb,
C includes at least one of Na, K, and Rb, and
n is an integer from 3 to 6.

7. The dielectric material of claim 1 , wherein the layered perovskite compound comprising the Dion-Jacobson phase comprising at least one of
KCa 2 Nb 3 O 10 , KCa 2 NaNb 4 O 13 , KCa 2 Na 2 Nb 5 O 16 , KCa 2 Na 3 Nb 6 O 19 , KCa 2 KNb 4 O 13 , KCa 2 K 2 Nb 5 O 16 , KCa 2 K 3 Nb 6 O 19 , KCa 2 RbNb 4 O 13 , KCa 2 Rb 2 Nb 5 O 16 , KCa 2 Rb 3 Nb 6 O 19 , NaCa 2 Nb 3 O 10 , NaCa 2 KNb 4 O 13 , NaCa 2 K 2 Nb 5 O 16 , NaCa 2 K 3 Nb 6 O 19 , NaCa 2 NaNb 4 O 13 , NaCa 2 Na 2 Nb 5 O 16 , NaCa 2 Na 3 Nb 6 O 19 , NaCa 2 RbNb 4 O 13 , NaCa 2 Rb 2 Nb 5 O 16 , NaCa 2 Rb 3 Nb 6 O 19 , RbCa 2 Nb 3 O 10 , RbCa 2 KNb 4 O 13 , RbCa 2 K 2 Nb 5 O 16 , RbCa 2 K 3 Nb 6 O 19 , RbCa 2 RbNb 4 O 13 , RbCa 2 Rb 2 Nb 5 O 16 , RbCa 2 Rb 3 Nb 6 O 19 , RbCa 2 NaNb 4 O 13 , RbCa 2 Na 2 Nb 5 O 16 , and RbCa 2 Na 3 Nb 6 O 19 .

8. The dielectric material of claim 1 , wherein the dielectric material is a sinter of the layered perovskite compound comprising at least one selected from the Dion-Jacobson phase, the Aurivillius phase, and the Ruddlesden-Popper phase.

9. The dielectric material of claim 8 , wherein a difference between a position of a peak shown in a range of about 200 reciprocal centimeters (cm −1 ) to about 300 cm −1 in a Raman spectrum of the dielectric material and a position of a peak shown in a range of about 200 cm −1 to about 300 cm −1 in a Raman spectrum of a non-sintered layered perovskite compound used in preparing the dielectric material is 5 cm −1 or less.

10. The dielectric material of claim 1 , wherein the layered perovskite compound comprising the Aurivillius phase is represented by Formula 3:
(Bi 2 O 2 )(A′ n−1 B′ n O 3n+1 )  (Formula 3)

wherein, in Formula 3,
A′ includes at least one of a monovalent, a divalent, and a trivalent element,
B′ includes at least one of a trivalent, a pentavalent, and a hexavalent element, and
n is an integer from 3 to 6.

11. The dielectric material of claim 10 , wherein A′ in Formula 3 includes at least one of Na, K, Rb, Ca, and Sr, and
B′ includes at least one of scandium (Sc), lanthanum (La), titanium (Ti), zirconium (Zr), hafnium (Hf) vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl).

12. The dielectric material of claim 1 , wherein the layered perovskite compound comprising the Ruddlesden-Popper phase is represented by Formula 4:
A″ n″−1 B″ 2 C″ n″ O 3n″+1   (Formula 4)

wherein, in Formula 4,
A″ includes at least one of a monovalent, a divalent, and a trivalent element,
B″ includes at least one of a monovalent, a divalent, and a trivalent element,
C″ includes at least one of a trivalent, a quadrivalent, a pentavalent, and a hexavalent element, and
n″ is an integer from 1 to 6.

13. The dielectric material of claim 12 , wherein A″ and B″ each independently include at least one of Na, K, Rb, Ca, Sr, and Ba, and
C″ includes at least one of Sc, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Al, Ga, In, and Tl.

14. The dielectric material of claim 1 , further comprising a metal salt,
wherein the layered perovskite compound and the metal salt is in a solid solution.

15. The dielectric material of claim 14 , wherein the solid solution of the layered perovskite compound and the metal salt is represented by Formulae 5 to 7:
x M a X b - (1-x) ·AB 2 C n−3 D n O 3n+1   (Formula 5)

wherein, in Formula 5,
A includes a monovalent element,
B includes a divalent element,
C includes a monovalent element,
D includes a pentavalent element, and
n is an integer from 3 to 6,
M includes an element of Group 1, 2, or 3 of the Periodic Table of Elements,
X includes a monovalent anion, a divalent anion, or a trivalent anion, excluding halogen, and
0<x<1, 1≤a≤3, and 1≤b≤4;
x M a X b -(1 −x )[(Bi 2 O 2 )(A′ n−1 B′ n O 3n+1 )]  (Formula 6)

wherein, in Formula 6,
A′ includes a monovalent, divalent, or trivalent element,
B′ includes a trivalent, pentavalent, or hexavalent element, and
n is an integer from 3 to 6,
M includes an element of Group 1, 2, or 3 of the Periodic Table of Elements,
X includes a monovalent anion, a divalent anion, or a trivalent anion, excluding halogen, and
0<x<1, 1≤a≤3, and 1≤b≤4;
x M a X b -(1 −x )A″ n−1 B″ 2 C″ n O 3n+1   (Formula 7)

wherein, in Formula 7,
A″ includes a monovalent, divalent, or trivalent element,
B″ includes a monovalent, divalent, or trivalent element,
C″ includes a trivalent, quadrivalent, pentavalent, or hexavalent element, and
n is an integer from 1 to 6,
M includes an element of Group 1, 2, or 3 of the Periodic Table of Elements,
X includes a monovalent anion, a divalent anion, or a trivalent anion, excluding halogen, and
0<x<1, 1≤a≤3, and 1≤b≤4.

16. A device comprising:
a plurality of electrodes; and
the dielectric material of claim 1 disposed between a plurality of the electrodes.

17. The device of claim 16 , wherein the device is a capacitor.

18. The device of claim 17 , wherein the capacitor is a laminated capacitor,
the plurality of electrodes include a plurality of internal electrodes, and
the dielectric material is alternately disposed between the plurality of internal electrodes.

19. The device of claim 18 , wherein a permittivity of the dielectric material is 500 or greater in a range of about 1 kHz to about 1 MHz.

20. A method of preparing a dielectric material comprising:
preparing a mixture of a layered perovskite compound and a metal salt, the layered perovskite compound comprising a material phase of at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyungjun
• Kwak Chan
• Sasaki Takayoshi
• Ebina Yasuo
• Lee Changsoo
• Jung Dohwon
• Jo Giyoung
• Taniguchi Takaaki

Classifications

• C30B1/023 Primary

  from solids with amorphous structure · CPC title

• C03C17/001

  General methods for coating; Devices therefor · CPC title

• C03C17/23

  Oxides (C03C17/02 takes precedence) · CPC title

• C04B2235/3258

  Tungsten oxides, tungstates, or oxide-forming salts thereof · CPC title

• C04B2235/768

  Perovskite structure ABO3 · CPC title