Light-emitting device including nanostructures and display apparatus including the same

Patent metadata

Field	Value
Publication number	US-11943952-B2
Application number	US-202117165522-A
Country	US
Kind code	B2
Filing date	Feb 2, 2021
Priority date	Aug 3, 2020
Publication date	Mar 26, 2024
Grant date	Mar 26, 2024

Abstract

Provided is a light-emitting device including a reflective layer including a plurality of nano-structures two-dimensionally disposed regularly and a low-refractive-index layer disposed adjacent to the plurality of nano-structures, a first electrode disposed on the reflective layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein each of the plurality of nano-structures includes a non-metallic material, and the low-refractive-index layer includes a dielectric material having a second refractive index lower than a first refractive index of the non-metallic material.

First claim

What is claimed is:

1. A light-emitting device comprising:
a reflective layer comprising a plurality of nano-structures two-dimensionally disposed regularly and a low-refractive-index layer disposed adjacent to the plurality of nano-structures;
a first electrode disposed on the reflective layer;
an organic emission layer disposed on the first electrode; and
a second electrode disposed on the organic emission layer,
wherein each of the plurality of nano-structures comprises a non-metallic material, and the low-refractive-index layer comprises a dielectric material having a second refractive index lower than a first refractive index of the non-metallic material, and
wherein the non-metallic material comprises at least one of BaTiO 3 , Cr 2 O 3 , HfO 2 , ZnS, ZnSe, GaP, InP, GaAs, GaN, and AlAs 2 .

2. The light-emitting device of claim 1 , wherein the first electrode is a transparent electrode, and the second electrode is a semi-transmissive electrode that is configured to reflect a part of light and transmits a remaining part of the light.

3. The light-emitting device of claim 1 , wherein the reflective layer and the second electrode form a micro-cavity having a resonance wavelength.

4. The light-emitting device of claim 3 , wherein a diameter of each of the plurality of nano-structures, a height of each of the plurality of nano-structures, and a period of the plurality of nano-structures of the reflective layer are determined such that the reflective layer has a highest reflectance for light having a wavelength corresponding to the resonance wavelength of the micro-cavity.

5. The light-emitting device of claim 4 , wherein the period of the plurality of nano-structures is smaller than the resonance wavelength of the micro-cavity.

6. The light-emitting device of claim 5 , wherein the period of the plurality of nano-structures ranges from 200 nm to 500 nm.

7. The light-emitting device of claim 4 , wherein the height of each of the plurality of nano-structure ranges from 20 nm to 200 nm.

8. The light-emitting device of claim 1 , wherein a top surface of the low-refractive-index layer is disposed on top surfaces of the plurality of nano-structures, the top surfaces of the plurality of nano-structures are spaced apart from the first electrode, and the top surface of the low-refractive-index layer directly contacts the first electrode.

9. The light-emitting device of claim 1 , wherein top surfaces of the plurality of nano-structures and a top surface of the low-refractive-index layer are disposed on a same plane, and the top surfaces of the plurality of nano-structures and the top surface of the low-refractive-index layer directly contact the first electrode.

10. The light-emitting device of claim 1 , wherein the reflective layer further comprises a metal reflective film that is flat and directly contacts bottom surfaces of the plurality of nano-structures.

11. The light-emitting device of claim 10 , wherein the low-refractive-index layer is disposed on a top surface of the metal reflective film that is not in contact with the bottom surfaces of the plurality of nano-structures and is disposed on a bottom surface of the metal reflective film.

12. The light-emitting device of claim 1 , wherein the reflective layer further comprises a metal reflective film that is flat and is disposed on a bottom surface of the low-refractive-index layer.

13. The light-emitting device of claim 1 , wherein the low-refractive-index layer comprises a first low-refractive-index layer disposed on bottom surfaces of the plurality of nano-structures and a second low-refractive-index layer disposed on side surfaces and top surfaces of the plurality of nano-structures, and
wherein the first low-refractive-index layer and the second low-refractive-index layer comprise dielectric materials having different refractive indexes.

Assignees

• Samsung Electronics Co Ltd
• Iucf Hyu

Inventors

• Song Sunjin
• Song Seokho
• Joo Wonjae

Classifications

• H10K50/868

  Arrangements for polarized light emission (H10K50/86 takes precedence) · CPC title

• H10K50/805

  Electrodes · CPC title

• H10K50/856

  comprising reflective means · CPC title

• H10K50/852

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K50/858 Primary

  comprising refractive means, e.g. lenses · CPC title