Pulse compression photoconductive semiconductor switches
US-2022123211-A1 · Apr 21, 2022 · US
US11942760B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11942760-B2 |
| Application number | US-201817271428-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2018 |
| Priority date | Dec 19, 2018 |
| Publication date | Mar 26, 2024 |
| Grant date | Mar 26, 2024 |
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A high-voltage switch, whose operation leverages the speed of electrons to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, the high-voltage switch includes a first electrode, a second electrode spaced apart from the first electrode, a region of non-absorbing material occupying a portion of the space between the first and second electrodes and allowing a laser pulse to propagate therethrough without substantial absorption, and a region of absorbing material occupying another portion of the space and producing a charged particle cloud upon receiving the laser pulse. The high-voltage switch remains “on” upon the charged particle cloud reaching an electrode and until it has been collected by the electrode, and where the high-voltage switch remains “off” subsequent to the collection and until another generated charged particle cloud reaches the electrode.
Opening claim text (preview).
What is claimed is: 1. A high-voltage switch, comprising: a first electrode configured to receive a voltage having a first polarity; a second electrode that is spaced apart from the first electrode and configured to receive a voltage having a second polarity or to be connected to a ground level; a first region of non-absorbing material that occupies at least a portion of a space between the first and second electrodes, the non-absorbing material allowing a laser pulse to propagate therethrough without substantial absorption of the laser pulse; and a first region of absorbing material occupying at least another portion of the space between the first and the second electrodes, the first region of absorbing material configured to produce a charged particle cloud upon receiving the laser pulse, wherein the high-voltage switch is configured to generate an output current upon the charged particle cloud reaching either the first or the second electrodes and until the charged particle cloud has been collected by the first or the second electrodes, and wherein the high-voltage switch is configured to generate substantially no output current subsequent to the collection of the charged particle cloud by the first or the second electrodes and until another generated charged particle cloud reaches either the first or the second electrodes. 2. The high-voltage switch of claim 1 , wherein the first region of non-absorbing material and first region of absorbing material are shaped as layers. 3. The high-voltage switch of claim 1 , wherein the high-voltage switch comprises a second region of non-absorbing material, and wherein: the first electrode is positioned at a top section of the high-voltage switch, the first region of non-absorbing material is positioned below the first electrode, the first region of absorbing material is positioned below the first region of absorbing material, the second region of non-absorbing material is positioned below the first region of absorbing material, and the second electrode is positioned below the second region of non-absorbing material such as to allow the laser pulse upon propagation through the first region of absorbing material and the second region of non-absorbing material to be reflected back to the first region of absorbing material for generation of a new charged particle cloud. 4. The high-voltage switch of claim 1 , wherein: the first electrode is positioned at a top section of the high-voltage switch, the first region of absorbing material is positioned below the first electrode, the first region of non-absorbing material is positioned below the first region of absorbing material, and the second electrode is positioned below the first region of non-absorbing material such as to allow the laser pulse upon propagation through the first region of absorbing material and the first region of non-absorbing material to be reflected back to the first region of absorbing material for generation of a new charged particle cloud. 5. The high-voltage switch of claim 1 , wherein the high-voltage switch comprises a mirror, and wherein: the first electrode is positioned at a top section of the high-voltage switch, the first region of absorbing material is positioned below the first electrode, the first region of non-absorbing material is positioned below the first region of absorbing material, the second electrode, comprising a substantially transparent material, is positioned below the first region of non-absorbing material, the substantially transparent material allowing the laser pulse to propagate therethrough without substantial absorption of the laser pulse, and the mirror is positioned below and spaced apart from the second electrode such as to allow the laser pulse upon propagation through the second electrode to be reflected back from the mirror and to the first region of absorbing material for generation of a new charged particle cloud. 6. The high-voltage switch of claim 1 , wherein the first electrode comprises a plurality of conductor regions that are spaced apart and the high-voltage switch comprises a plurality of regions of non-absorbing material, and wherein: the first electrode is positioned at a top section of the high-voltage switch, the plurality of regions of non-absorbing material, including the first region of non-absorbing material, are positioned to align with spaces between the plurality of conductor regions, the first region of absorbing material is positioned below a first conductor region of the plurality of conductor regions, and the second electrode is positioned below the first region of absorbing material. 7. The high-voltage switch of claim 1 , wherein the first electrode comprises two conductor regions that are spaced apart, wherein the second electrode comprises a conductor sheet, wherein the first region of non-absorbing material and first region of absorbing material are formed as layers, and wherein: the first electrode is positioned at a top section of the high-voltage switch, the first region of absorbing material is positioned at the top section of the high-voltage switch and in between the two conductor regions of the first electrode, the first region of non-absorbing material is positioned below the first electrode and the first region of absorbing material, and the second electrode is positioned below the first region of non-absorbing material. 8. The high-voltage switch of claim 7 , wherein the first region of absorbing material is configured to enable two-photon absorption of the laser pulse. 9. The high-voltage switch of claim 1 , wherein a bandgap of the non-absorbing material is higher than a bandgap of the absorbing material. 10. The high-voltage switch of claim 1 , wherein a wavelength of the laser pulse is selected based on properties of the absorbing material. 11. The high-voltage switch of claim 1 , wherein the absorbing material comprises vanadium-doped silicon carbide, wherein the non-absorbing material comprises undoped silicon carbide, and wherein the first electrode and the second electrode comprise a metal or a metallic alloy. 12. A high-voltage switch, comprising: a first electrode comprising a plurality of conductor regions that are spaced apart and configured to receive a voltage having a first polarity, wherein the first electrode is positioned at a top section of the high-voltage switch; a second electrode that is spaced apart from the first electrode and configured to receive a voltage having a second polarity or to be connected to a ground level; at least one laser gain medium that occupies a portion of a space between the first and second electrodes, wherein the at least one laser gain medium is configured to generate a laser pulse; and a region of absorbing material occupying at least another portion of the space between the first and the second electrodes and positioned below the plurality of conductor regions of the first electrode, the region of absorbing material configured to produce a charged particle cloud upon receiving the laser pulse, wherein the second electrode is positioned below the region of absorbing material, wherein the high-voltage switch is configured to generate an output current upon the charged particle cloud reaching either the first or the second electrodes and until the charged particle cloud has been collected by the first or the second electrodes, and wherein the high-voltage switch is configured to generate substantially no output current subsequent to the collection of the charged particle cloud by the first or the second electrodes and until another generated charged particle cloud reaches either the first or the second
for applying pulses to the laser · CPC title
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N79/00) · CPC title
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