Pressure sensor

US11940347B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11940347-B2
Application numberUS-202117508249-A
CountryUS
Kind codeB2
Filing dateOct 22, 2021
Priority dateApr 26, 2019
Publication dateMar 26, 2024
Grant dateMar 26, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

First claim

Opening claim text (preview).

What is claimed is: 1. A pressure sensor that detects a pressure of a pressure medium, comprising: a stem having a pressure introduction hole into which the pressure medium is introduced, and a diaphragm that is deformable according to the pressure of the pressure medium; and a strain detecting element being arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm, wherein the strain detecting element has a portion made of polysilicon, and a doping layer having a higher electrical resistivity than the polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element. 2. The pressure sensor according to claim 1 , wherein the strain detecting element has a plurality of gauge resistors composed of the polysilicon and whose resistance value changes according to deformation of the diaphragm, and a wiring layer connecting the gauge resistors so as to form a bridge circuit, and a pad portion composed of an electrode film and connected to the wiring layer, the wiring layer has a connecting portion for connecting adjacent gauge resistors so as to form the bridge circuit, and an extending portion drawn out from the connecting portion, and the pad portion is connected only to the extending portion. 3. The pressure sensor according to claim 1 , wherein the strain detecting element has a plurality of gauge resistors composed of the polysilicon and whose resistance value changes according to deformation of the diaphragm, and a wiring layer connecting the gauge resistors so as to form a bridge circuit, and a pad portion composed of an electrode film and connected to the wiring layer, the wiring layer has a connecting portion for connecting adjacent gauge resistors so as to form the bridge circuit, and an extending portion drawn out from the connecting portion, a protective film covers the strain detecting element, and has an opening for exposing the pad portion on the diaphragm, and the opening is formed inside the extending portion in a normal direction with respect to a surface direction of the diaphragm without intersecting an end of the extending portion. 4. The pressure sensor according to claim 1 , wherein the stem has a first stem forming a diaphragm side and a second stem forming an opening end side of the pressure introduction hole, wherein the first stem and the second stem are joined by a welded portion, the first stem has a wall portion formed between the welded portion and the diaphragm, and a thickness of the wall portion between an inner wall surface and an outer wall surface is thinner than that of a portion where the welded portion is formed.

Assignees

Inventors

Classifications

  • G01L9/04Primary

    of resistance-strain gauges · CPC title

  • Electrical connection means · CPC title

  • Details about the mounting of the sensor to support or covering means · CPC title

  • Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation · CPC title

  • of piezo-resistive devices · CPC title

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Frequently asked questions

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What does patent US11940347B2 cover?
A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain de…
Who is the assignee on this patent?
Denso Corp, Nagano Keiki Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01L9/04. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 26 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).