Light emitting device including planarization layer, method of manufacturing the light emitting device, and display apparatus including the light emitting device

Patent metadata

Field	Value
Publication number	US-11937441-B2
Application number	US-202318325713-A
Country	US
Kind code	B2
Filing date	May 30, 2023
Priority date	Jul 15, 2020
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

Provided a light emitting device including a reflective layer including a plurality of nanostructures that are periodically two-dimensionally arranged, a planarization layer disposed on the reflective layer, a first electrode disposed on the planarization layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein the planarization layer includes a conductive material that is transparent with respect to light emitted by the organic emission layer, and wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures.

First claim

What is claimed is:

1. A light emitting device comprising:
a reflective layer comprising a plurality of nanostructures that are periodically two-dimensionally arranged;
a planarization layer disposed on the reflective layer;
a first electrode disposed on the planarization layer;
an organic emission layer disposed on the first electrode; and
a second electrode disposed on the organic emission layer,
wherein the planarization layer comprises a conductive material that is transparent with respect to light emitted by the organic emission layer,
wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures,
wherein a thickness of the planarization layer is in a range of 10 nm to 50 nm, and
wherein a surface roughness of the planarization layer is less than 1 nm root-mean-square (RMS).

2. The light emitting device of claim 1 , wherein the planarization layer further comprises an organic-inorganic hybrid layer in which reduced graphene oxide is dispersed.

3. The light emitting device of claim 2 , wherein the organic-inorganic hybrid layer comprises an organic silicon compound.

4. The light emitting device of claim 2 , wherein a proportion of the reduced graphene oxide dispersed in the planarization layer is in a range of 1.5 wt % to 15 wt %.

5. The light emitting device of claim 1 , wherein the surface roughness of the planarization layer is in a range of 0.3 nm RMS to 0.5 nm RMS.

6. The light emitting device of claim 1 , wherein the reflective layer comprises a metal material comprising silver (Ag), aluminum (Al), gold (Au), nickel (Ni), or an alloy thereof.

7. A light emitting device comprising:
a reflective layer comprising a plurality of nanostructures that are periodically two-dimensionally arranged;
a planarization layer disposed on the reflective layer;
a first electrode disposed on the planarization layer;
an organic emission layer disposed on the first electrode; and
a second electrode disposed on the organic emission layer,
wherein the planarization layer comprises a conductive material that is transparent with respect to light emitted by the organic emission layer,
wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures,
wherein the first electrode is a transparent electrode and the second electrode is a semi-transmissive electrode that is configured to reflect part of light and transmit a remaining part of the light, and
wherein the second electrode comprises a reflective metal, and a thickness of the second electrode is in a range of 10 nm to 50 nm.

8. The light emitting device of claim 7 , wherein the planarization layer further comprises an organic-inorganic hybrid layer in which reduced graphene oxide is dispersed.

9. The light emitting device of claim 8 , wherein the organic-inorganic hybrid layer comprises an organic silicon compound.

10. The light emitting device of claim 8 , wherein a proportion of the reduced graphene oxide dispersed in the planarization layer is in a range of 1.5 wt % to 15 wt %.

11. The light emitting device of claim 7 , wherein the reflective layer comprises a metal material comprising silver (Ag), aluminum (Al), gold (Au), nickel (Ni), or an alloy thereof.

12. A light emitting device comprising:
a reflective layer comprising a plurality of nanostructures that are periodically two-dimensionally arranged;
a planarization layer disposed on the reflective layer;
a first electrode disposed on the planarization layer;
an organic emission layer disposed on the first electrode; and
a second electrode disposed on the organic emission layer,
wherein the planarization layer comprises a conductive material that is transparent with respect to light emitted by the organic emission layer,
wherein the planarization layer is disposed on upper surfaces of the plurality of nanostructures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures, and
wherein the reflective layer and the second electrode form a micro cavity having a resonance wavelength.

13. The light emitting device of claim 12 , wherein the resonance wavelength of the micro cavity is λ, a diameter of each of the plurality of nanostructures of the reflective layer, a height of each of the plurality of nanostructures, and a period of the plurality of nanostructures are determined such that an optical length of the micro cavity satisfies nλ/2, where n is a natural number.

14. The light emitting device of claim 12 , wherein a period of the plurality of nanostructures is less than the resonance wavelength of the micro cavity.

15. The light emitting device of claim 12 , wherein the planarization layer further comprises an organic-inorganic hybrid layer in which reduced graphene oxide is dispersed.

16. The light emitting device of claim 15 , wherein the organic-inorganic hybrid layer comprises an organic silicon compound.

17. The light emitting device of claim 15 , wherein a proportion of the reduced graphene oxide dispersed in the planarization layer is in a range of 1.5 wt % to 15 wt %.

18. A light emitting device comprising:
a reflective layer comprising a plurality of nanostructures that are periodically two-dimensionally arranged;
a planarization layer disposed on the reflective layer;
a first electrode disposed on the planarization layer;
an organic emission layer disposed on the first electrode; and
a second electrode disposed on the organic emission layer,
wherein the planarization layer comprises a conductive material that is transparent with respect to light emitted by the organic emission layer,
wherein the planarization layer is disposed on upper surfaces of the plurality of nano structures such that an air gap is provided between adjacent nanostructures of the plurality of nanostructures,
wherein the reflective layer further comprises a base,
wherein the plurality of nanostructures protrude toward the planarization layer from an upper surface of the base, and
wherein the reflective layer further comprises a plurality of recesses that are recessed from the upper surface of the base and two-dimensionally provided.

19. The light emitting device of claim 18 , wherein the reflective layer and the second electrode form a micro cavity having a resonance wavelength,
wherein the organic emission layer is configured to emit visible light comprising light of a first wavelength and light of a second wavelength,
wherein the first wavelength is λ, a diameter of each of the plurality of nanostructures of the reflective layer, a height of each of the plurality of nanostructures, and a period of the plurality of nanostructures are determined such that an optical length of the micro cavity satisfies nλ/2, where n is a natural number, and
wherein a diameter of each of the plurality of recesses is determined such that the plurality of recesses are configured to absorb the light of the second wavelength.

20. The light emitting device of claim 18 , wherein the planarization layer further comprises an organic-inorganic hybrid layer in which reduced graphene oxide is dispersed.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Bae Juncheol
• Jang Wonseok
• Joo Wonjae
• Whang Dongmok

Classifications

• H10K59/878

  comprising reflective means · CPC title

• H10K59/10

  OLED displays · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K50/11

  characterised by the electroluminescent [EL] layers · CPC title

• H10K50/85 Primary

  Arrangements for extracting light from the devices · CPC title