Protection device, load drive system, protection method, and recording medium

Patent metadata

Field	Value
Publication number	US-11936370-B2
Application number	US-202217742736-A
Country	US
Kind code	B2
Filing date	May 12, 2022
Priority date	May 14, 2021
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

A protection device is capable of protecting a load drive system at an appropriate timing according to a temperature of a power semiconductor. The protection device includes: a capacitor configured to output a voltage according to a charge accumulated by a first current; and a protection circuit configured to: (i) determine whether or not the voltage output by the capacitor exceeds a certain threshold value; (ii) generate a second current having a magnitude according to information related to the temperature of the power semiconductor which drives a load; and (iii) change a magnitude of the first current based on the second current.

First claim

What is claimed is:

1. A protection device comprising:
a capacitor configured to output a voltage according to a charge accumulated by a first current; and
a protection circuit configured to: (i) determine whether or not the voltage output by the capacitor exceeds a certain threshold value; (ii) generate a second current having a magnitude according to information related to a temperature of a power semiconductor which drives a load; and (iii) increase the first current as the second current becomes smaller.

2. The protection device according to claim 1 ,
wherein the protection circuit is further configured to: (i) output an on-command in a case where the power semiconductor is in an on-state; and (ii) stop the output of the on-command in a case where the voltage output by the capacitor exceeds the threshold value.

3. The protection device according to claim 1 , wherein:
the protection circuit includes a current generation circuit configured to generate the second current;
the current generation circuit includes a voltage generation circuit configured to generate a voltage of which a value is configured to be changed according to the temperature of the power semiconductor, a first operational amplifier, a second operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, and a fifth resistor; and
a non-inverting input terminal of the first operational amplifier is connected to the voltage generation circuit, an inverting input terminal of the first operational amplifier is connected to an output terminal of the first operational amplifier and a first terminal of the first resistor, a non-inverting input terminal of the second operational amplifier is connected to a first terminal of the third resistor and a first terminal of the fourth resistor, an inverting input terminal of the second operational amplifier is connected to a second terminal of the first resistor and a first terminal of the second resistor, an output terminal of the second operational amplifier is connected to a second terminal of the second resistor and a first terminal of the fifth resistor, a second terminal of the fourth resistor is connected to a second terminal of the fifth resistor and the capacitor, and a second terminal of the third resistor is connected to a ground terminal.

4. The protection device according to claim 3 ,
wherein the voltage generation circuit includes a thermistor and a constant current source, and is configured to apply a voltage generated in the thermistor to the non-inverting input terminal of the first operational amplifier in a case where a current generated by the constant current source flows through the thermistor.

5. The protection device according to claim 3 ,
wherein the voltage generation circuit includes a diode and a constant current source, and is configured to apply a voltage generated in the diode to the non-inverting input terminal of the first operational amplifier in a case where a current generated by the constant current source flows through the diode.

6. The protection device according to claim 3 ,
wherein the voltage generation circuit includes a current source configured to: (i) generate a current according to a temperature change of the power semiconductor and a sixth resistor; and (ii) apply a voltage generated in the sixth resistor to the non-inverting input terminal of the first operational amplifier in a case where the current generated by the current source flows through the sixth resistor.

7. A load drive system comprising:
the protection device according to claim 1 ; and
a drive device including the power semiconductor which is to be protected by the protection device.

8. A protection method comprising:
outputting a voltage according to a charge accumulated by a first current; and
determining whether or not the voltage exceeds a certain threshold value, generating a second current having a magnitude according to information related to a temperature of a power semiconductor which drives a load, and increasing the first current as the second current becomes smaller.

9. A non-transitory computer-readable recording medium recording program for causing a computer to execute a process comprising:
outputting a voltage according to a charge accumulated by a first current; and
determining whether or not the voltage exceeds a certain threshold value, generating a second current having a magnitude according to information related to a temperature of a power semiconductor which drives a load, and increasing the first current as the second current becomes smaller.

10. The protection method according to claim 8 , further comprising:
connecting a non-inverting input terminal of a first operational amplifier of a current generation circuit to a voltage generation circuit that generates a voltage of which a value is changed according to the temperature of the power semiconductor;
connecting an inverting input terminal of the first operational amplifier to an output terminal of the first operational amplifier and a first terminal of a first resistor;
connecting a non-inverting input terminal of a second operational amplifier to a first terminal of a third resistor and a first terminal of a fourth resistor;
connecting an inverting input terminal of the second operational amplifier to a second terminal of the first resistor and a first terminal of a second resistor;
connecting an output terminal of the second operational amplifier to a second terminal of the second resistor and a first terminal of a fifth resistor;
connecting a second terminal of the fourth resistor to a second terminal of the fifth resistor and a capacitor; and
connecting a second terminal of the third resistor to a ground terminal.

11. The non-transitory computer-readable recording medium according to claim 9 , wherein the process further comprises:
connecting a non-inverting input terminal of a first operational amplifier of a current generation circuit to a voltage generation circuit that generates a voltage of which a value is changed according to the temperature of the power semiconductor;
connecting an inverting input terminal of the first operational amplifier to an output terminal of the first operational amplifier and a first terminal of a first resistor;
connecting a non-inverting input terminal of a second operational amplifier to a first terminal of a third resistor and a first terminal of a fourth resistor;
connecting an inverting input terminal of the second operational amplifier to a second terminal of the first resistor and a first terminal of a second resistor;
connecting an output terminal of the second operational amplifier to a second terminal of the second resistor and a first terminal of a fifth resistor;
connecting a second terminal of the fourth resistor to a second terminal of the fifth resistor and a capacitor; and
connecting a second terminal of the third resistor to a ground terminal.

Assignees

• Mitsubishi Heavy Ind Ltd

Inventors

• Yoshino Yusuke
• Nakagami Takashi
• Iida Ryo

Classifications

• H03K17/0822 Primary

  in field-effect transistor switches · CPC title

• H02H1/0007

  concerning the detecting means (in general G01R or other subclasses of G01; reed switches H01H71/2445) · CPC title

• H03K17/082 Primary

  by feedback from the output to the control circuit · CPC title

• H03K17/14

  Modifications for compensating variations of physical values, e.g. of temperature · CPC title

• H03K2217/0081

  Power supply means, e.g. to the switch driver · CPC title