Capacitor structures and apparatus containing such capacitor structures

Patent metadata

Field	Value
Publication number	US-11935883-B2
Application number	US-202318096222-A
Country	US
Kind code	B2
Filing date	Jan 12, 2023
Priority date	Jun 27, 2019
Publication date	Mar 19, 2024
Grant date	Mar 19, 2024

Abstract

Capacitor structures, and apparatus containing similar capacitor structures, might include a first conductive region having a first portion and second and third portions extending from an upper surface of its first portion, a second conductive region having a first portion and a second portion extending from an upper surface of its first portion, a dielectric overlying the second portion of the first conductive region, a conductor overlying the dielectric, and a conductive element overlying the third portion of the first conductive region and overlying the second portion of the second conductive region, wherein the first conductive region has a first conductivity type and the second conductive region has a second conductivity type different than the first conductivity type.

First claim

What is claimed is:

1. A capacitor structure, comprising:
a first conductive region comprising a first portion having an upper surface at a first level, a second portion extending from the upper surface of the first portion of the first conductive region to have an upper surface at a second level overlying the first level, and a third portion adjacent to the second portion of the first conductive region and extending from the upper surface of first portion of the first conductive region to have an upper surface at a third level overlying the first level, wherein the first conductive region has a first conductivity type;
a second conductive region adjacent the first conductive region and comprising a first portion having an upper surface, and a second portion extending from the upper surface of the first portion of the second conductive region to have an upper surface at the third level, wherein the second conductive region has a second conductivity type different than the first conductivity type;
a dielectric overlying the second portion of the first conductive region;
a conductor overlying the dielectric; and
a conductive element overlying the third portion of the first conductive region and overlying the second portion of the second conductive region.

2. The capacitor structure of claim 1 , wherein the second level and the third level are a same level.

3. The capacitor structure of claim 1 , wherein the conductor and the conductive element comprises a same conductive material.

4. The capacitor structure of claim 3 , further comprising a second dielectric between the conductive element and the third portion of the first conductive region and between the conductive element and the second portion of the second conductive region.

5. The capacitor structure of claim 1 , wherein the conductive element is in contact with the upper surface of the third portion of the first conductive region and in contact with the upper surface of the second portion of the second conductive region.

6. The capacitor structure of claim 1 , wherein the capacitor structure further comprises a portion of a semiconductor between the third portion of the first conductive region and the second portion of the second conductive region.

7. An integrated circuit device, comprising:
a first conductor configured to receive a first voltage level;
a second conductor configured to receive a second voltage level different than the first voltage level; and
a decoupling capacitor connected between the first conductor and the second conductor, wherein the decoupling capacitor has a structure comprising:
a first conductive region comprising a first raised portion and a second raised portion spaced apart from the first raised portion, wherein the first conductive region has a first conductivity type;
a second conductive region comprising a raised portion adjacent the second raised portion of the first conductive region, wherein the second conductive region has a second conductivity type different than the first conductivity type;
a dielectric overlying the first raised portion of the first conductive region;
a third conductor overlying the dielectric and connected to the first conductor; and
a conductive element overlying the second raised portion of the first conductive region and overlying the raised portion of the second conductive region.

8. The integrated circuit device of claim 7 , wherein the conductive element is in contact with an upper surface of the second raised portion of the first conductive region and in contact with an upper surface of the raised portion of the second conductive region.

9. The integrated circuit device of claim 8 , wherein the conductive element has a conductivity type selected from a group consisting of the first conductivity type and the second conductivity type.

10. The integrated circuit device of claim 7 , wherein the structure of the decoupling capacitor further comprises a second dielectric between the conductive element and the second raised portion of the first conductive region and between the conductive element and the raised portion of the second conductive region.

11. The integrated circuit device of claim 7 , wherein the structure of the decoupling capacitor further comprises a semiconductor between the second raised portion of the first conductive region and the raised portion of the second conductive region.

12. The integrated circuit device of claim 11 , wherein the conductive element is further overlying the semiconductor.

13. A voltage generation circuit, comprising;
a plurality of stages, wherein each stage of the plurality of stages comprises a respective voltage isolation device and a respective coupling capacitor connected to its respective voltage isolation device;
wherein the respective coupling capacitor for at least one stage of the plurality of stages has a structure comprising:
a first conductive region comprising a first raised portion and a second raised portion spaced apart from the first raised portion, wherein the first conductive region has a first conductivity type;
a second conductive region comprising a raised portion adjacent the second raised portion of the first conductive region, wherein the second conductive region has a second conductivity type different than the first conductivity type;
a dielectric overlying the first raised portion of the first conductive region;
a conductor overlying the dielectric; and
a conductive element overlying the second raised portion of the first conductive region and overlying the raised portion of the second conductive region.

14. The voltage generation circuit of claim 13 , wherein the dielectric is a first dielectric, wherein the conductor is a first conductor, and wherein the structure of the respective coupling capacitor for the at least one stage of the plurality of stages further comprises:
a second dielectric between the conductive element and the second raised portion of the first conductive region and between the conductive element and the raised portion of the second conductive region.

15. The voltage generation circuit of claim 13 , wherein the conductive element of the respective coupling capacitor for the at least one stage of the plurality of stages is in contact with an upper surface of the second raised portion of the first conductive region and in contact with an upper surface of the raised portion of the second conductive region.

16. The voltage generation circuit of claim 15 , wherein the conductive element has a conductivity type selected from the first conductivity type and the second conductivity type.

17. The voltage generation circuit of claim 13 , further comprising a semiconductor between the second raised portion of the first conductive region and the raised portion of the second conductive region.

18. The voltage generation circuit of claim 13 , wherein the voltage generation circuit further comprises an additional stage comprising a respective voltage isolation device without a respective coupling capacitor.

19. The voltage generation circuit of claim 13 , wherein the voltage generation circuit is a charge pump selected from a group consisting of a negative charge pump and a positive charge pump.

20. The voltage generation circuit of claim 13 , wherein the conductor of the respective coupling capacitor for the at least one stage of the plurality of stages is configured to receive a clock signal.

Assignees

• Micron Technology Inc
• Lodestar Licensing Group Llc

Inventors

• Mikhalev Vladimir
• Violette Michael

Classifications

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10W42/60

  protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10D8/25

  Zener diodes · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10D89/921

  characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses · CPC title