Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
US-9219202-B2 · Dec 22, 2015 · US
US11932793B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11932793-B2 |
| Application number | US-202217748789-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2022 |
| Priority date | Jun 29, 2021 |
| Publication date | Mar 19, 2024 |
| Grant date | Mar 19, 2024 |
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The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 μm≤R≤40 μm; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as r inner .
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What is claimed is: 1. A phosphor with garnet structure, wherein the phosphor comprises the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element and 0.43-1.46% of Ce element; the shortest distance from the surface of one side of the phosphor to the surface of the opposite side through the centroid of the phosphor is defined as R, 5 μm≤R≤40 μm; any distance from the phosphor surface to the centroid is r, 0<r<½R; and the space with the distance from the phosphor surface to the centroid direction being less than or equal to r is defined as r inner , and the space with the distance from the phosphor surface to the centroid direction being greater than r is defined as r outer , whereat the ratio of the weight percentage of Ga elements in any unit volume in r outer to r inner is n, and 0≤n≤1. 2. The phosphor of claim 1 , wherein R of the phosphor is 10 μm≤R≤30 μm. 3. The phosphor with garnet structure of claim 2 , wherein the value range of r is, 0.5 μm≤r≤⅓R. 4. The phosphor with garnet structure of claim 3 , wherein the value range of n is, 0≤n≤0.5. 5. The phosphor of claim 1 , wherein the phosphor comprises, in percentage by weight, 40.6-45.2% of Y element, 10.9-21.9% of Al element, 2.2-19.8% of Ga element, 27.7-32% of O element, 0.67-1.2% of Ce element. 6. The phosphor of claim 5 , wherein R of the phosphor is 10 μm≤R≤30 μm. 7. The phosphor with garnet structure of claim 1 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light. 8. The phosphor with garnet structure of claim 5 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light. 9. The phosphor with garnet structure of claim 2 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light. 10. The phosphor with garnet structure of claim 3 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light. 11. The phosphor with garnet structure of claim 4 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light. 12. A light-emitting device, comprises the phosphor with garnet structure of claim 1 . 13. The light-emitting device of claim 12 , further comprising other phosphor, wherein the other phosphor comprises one or more of (Ca, Sr, Ba)AlSiN 3 :Eu, (Mg, Ca, Sr, Ba) 2 SiO 4 :Eu, (Ca, Sr) 3 SiO 5 :Eu, ZnS:Cu, ZnS:Ag, (Li, Na, K) 3 ZrF 7 :Mn, (Li, Na, K) 2 (Ti, Zr)F 6 :Mn, (Li, Na, K) 2 (Si, Ge)F 6 :Mn, (Ca, Sr, Ba)(Ti,Zr)F 6 :Mn, (Sr, Ca)S:Eu, Y 2 O 3 :Eu, (Sr, Ca, Ba, Mg) 5 (PO 4 ) 3 Cl:Eu, (Ca, Sr, Ba)MgAl 10 O 7 :Eu, (Ca, Sr, Ba) Si 2 O 2 N 2 :Eu. 14. The light-emitting device of claim 12 , wherein the phosphor comprises, in percentage by weight, 40.6-45.2% of Y element, 10.9-21.9% of Al element, 2.2-19.8% of Ga element, 27.7-32% of O element, 0.67-1.2% of Ce element. 15. The light-emitting device of claim 12 , wherein R of the phosphor is 10 μm≤R≤30 μm. 16. The light-emitting device of claim 15 , wherein the value range of r is, 0.5 μm≤r≤⅓R. 17. The light-emitting device of claim 16 , wherein the value range of n is, 0≤n≤0.5. 18. The light-emitting device of claim 12 , wherein the peak wavelength thereof is 515 nm to 550 nm under excitation of blue light.
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