Phase shifter and phased array antenna

Patent metadata

Field	Value
Publication number	US-11929535-B2
Application number	US-202017437517-A
Country	US
Kind code	B2
Filing date	Nov 23, 2020
Priority date	Nov 29, 2019
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

A phase shifter includes a substrate, a signal transmission structure disposed on the substrate, and a phase adjustment structure disposed on the substrate. The phase adjustment structure includes a conductive structure, at least one semiconductor structure disposed between the signal transmission structure and the conductive structure, a first insulating layer disposed between the conductive structure and the at least one semiconductor structure, and at least one first bias voltage line electrically connected to the conductive structure. Orthogonal projections, on the substrate, of the signal transmission structure, the conductive structure and the at least one semiconductor structure overlap with one another. An orthogonal projection, on the substrate, of the first insulating layer is located at least in a region in which the orthogonal projections, on the substrate, of the conductive structure and the at least one semiconductor structure overlap.

First claim

What is claimed is:

1. A phase shifter, comprising:
a substrate;
a signal transmission structure disposed on the substrate; and
a phase adjustment structure disposed on the substrate, wherein the phase adjustment structure includes:
a conductive structure;
at least one semiconductor structure disposed between the signal transmission structure and the conductive structure, orthogonal projections, on the substrate, of the signal transmission structure, the conductive structure, and the at least one semiconductor structure overlapping with one another;
a first insulating layer disposed between the conductive structure and the at least one semiconductor structure; an orthogonal projection, on the substrate, of the first insulating layer being located at least in a region in which the orthogonal projections, on the substrate, of the conductive structure and the at least one semiconductor structure overlap; and
at least one first bias voltage line electrically connected to the conductive structure.

2. The phase shifter according to claim 1 , wherein the signal transmission structure includes a first ground electrode and a first signal line, and the first ground electrode and the first signal line are respectively disposed on two opposite sides of the substrate in a thickness direction thereof, wherein
each semiconductor structure is electrically connected to the first signal line; and
an orthogonal projection, on the substrate, of each semiconductor structure overlaps with an orthogonal projection, on the substrate, of the first signal line.

3. The phase shifter according to claim 2 , further comprising:
a second bias voltage line, the second bias voltage line being electrically connected to the first signal line.

4. The phase shifter according to claim 2 , wherein the conductive structure includes at least one first conductive sub-structure, and an orthogonal projection, on the substrate, of each first conductive sub-structure overlaps with an orthogonal projection, on the substrate, of the first signal line; and
the at least one first conductive sub-structure is configured to be in one-to-one correspondence with the at least one semiconductor structure.

5. The phase shifter according to claim 4 , wherein the first signal line includes a main structure and at least one branch structure; the at least one branch structure is electrically connected to the main structure, and a direction in which an orthogonal projection, on the substrate, of each branch structure extends intersects a direction in which an orthogonal projection, on the substrate, of the main structure extends;
the at least one branch structure is configured to be in one-to-one correspondence with the at least one first conductive sub-structure, and the orthogonal projection, on the substrate, of each branch structure overlaps with an orthogonal projection, on the substrate, of a corresponding first conductive sub-structure.

6. The phase shifter according to claim 5 , wherein the conductive structure further includes at least one second conductive sub-structure:
at least one orthogonal projection, on the substrate, of the at least one second conductive sub-structure do not overlap with the orthogonal projection, on the substrate, of the first signal line; and
each second conductive sub-structure is electrically connected to at least one first conductive sub-structure.

7. The phase shifter according to claim 6 , wherein the conductive structure includes a plurality of first conductive sub-structures;
the at least one second conductive sub-structure includes a plurality of second conductive sub-structures; each second conductive sub-structure is electrically connected to at least one of the plurality of first conductive sub-structures, and different second conductive sub-structures are electrically connected to different first conductive sub-structures.

8. The phase shifter according to claim 7 , wherein not all second conductive sub-structures are connected to a same number of first conductive sub-structures.

9. The phase shifter according to claim 6 , wherein the at least one first bias voltage line is configured to be in one-to-one correspondence with the at least one second conductive sub-structure, and each first bias voltage line is electrically connected to a corresponding second conductive sub-structure.

10. The phase shifter according to claim 4 , wherein the first signal line includes a plurality of signal line segment structures spaced apart; orthogonal projections, on the substrate, of the plurality of signal line segment structures do not overlap with one another, and orthogonal projections, on a plane perpendicular to a direction in which the first signal line extends, of the plurality of signal line segment structures all overlap with one another;
an orthogonal projection, on the substrate, of an end, opposite to an adjacent signal line segment structure, of each signal line segment structure overlaps with an orthogonal projection, on the substrate, of one corresponding first conductive sub-structure.

11. The phase shifter according to claim 10 , wherein the conductive structure further includes at least one third conductive sub-structure;
at least one orthogonal projection, on the substrate, of the at least one third conductive sub-structure do not overlap with the orthogonal projections, on the substrate, of the plurality of signal line segment structures; and
each third conductive sub-structure is electrically connected to two adjacent first conductive sub-structures corresponding to opposite ends of two adjacent signal line segment structures.

12. The phase shifter according to claim 11 , further comprising:
a plurality of third bias voltage lines, wherein
the plurality of third bias voltage lines are configured to be in one-to-one correspondence with the plurality of signal line segment structures, and each third bias voltage line is electrically connected to a corresponding signal line segment structure;
the at least one first bias voltage line is configured to be in one-to-one correspondence with the at least one third conductive sub-structure, and each first bias voltage line is electrically connected to a corresponding third conductive sub-structure.

13. The phase shifter according to claim 1 , wherein the signal transmission, structure includes a second signal line, and a second ground electrode and a third ground electrode disposed at two opposite sides of the second signal line in a width direction thereof; the second signal line, the second ground electrode and the third ground electrode are located on a same side of the substrate;
each semiconductor structure is electrically connected to the second signal line; an orthogonal projection, on the substrate, of the semiconductor structure overlaps with an orthogonal projection, on the substrate, of the second signal line, and the orthogonal projection, on the substrate, of the semiconductor structure does not overlap with orthogonal projections, on the substrate, of the second ground electrode and the third ground electrode.

14. The phase shifter according to claim 13 , wherein the conductive structure includes at least one fourth conductive sub-structure, and an orthogonal projection, on the substrate, of each fourth conductive sub-structure overlaps with the orthogonal projection, on the substrate, of the second signal line, wherein
the at least one fourth conductive sub-structure is configured to be in one-to-one correspondence with the at least one semiconductor structure.

15. The phase shifter according to claim 14 , further comprising:
a fourth bias vo

Assignees

• Beijing Boe Sensor Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Ting Tienlun

Classifications

• H01P1/18 Primary

  Phase-shifters (H01P1/165 takes precedence) · CPC title

• H01Q3/36

  with variable phase-shifters · CPC title

• H01Q3/34 Primary

  by electrical means (active lenses or reflecting arrays H01Q3/46) · CPC title

• H01P1/185 Primary

  using a diode or a gas filled discharge tube · CPC title