Broadband electro-absorption optical modulator using on-chip RF input signal termination

Patent metadata

Field	Value
Publication number	US-11927839-B2
Application number	US-202017019706-A
Country	US
Kind code	B2
Filing date	Sep 14, 2020
Priority date	Sep 14, 2020
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

First claim

What is claimed is:

1. An electro-absorption optical modulator comprising
a substrate of a first conductivity type, the substrate defined as comprising a top major surface;
an electro-absorption modulating device formed along a longitudinal extent of the substrate, the electro-absorption modulating device including an active layer and an optical waveguiding layer of a second conductivity type disposed over the active layer, the optical waveguiding layer configured to receive an incoming continuous wave (CW) optical signal and generate an optically modulated output signal therefrom;
a dielectric layer disposed on a portion of the top major surface of the substrate at a spaced-apart location separate from the electro-absorption modulating device;
a conductive layer disposed over the dielectric layer, wherein the combination of the substrate, the dielectric layer and the conductive layer form a distributed capacitance within the electro-absorption optical modulator;
a stripline conductor disposed over an extended portion of the optical waveguiding layer;
an RF signal input path coupled to the stripline conductor for providing an electrical input RF modulating signal to the electro-absorption modulating device; and
a resistive RF signal termination path coupled between the stripline conductor and the conductive layer, the conductive layer providing an AC ground termination for the electrical input RF modulating signal of the electro-absorption optical modulator.

2. The electro-absorption optical modulator as defined in claim 1 wherein the modulator further comprises
a termination resistor disposed along the resistive RF signal termination path, the termination resistor sized to provide impedance matching with a source of the electrical input RF modulating signal.

3. The electro-absorption optical modulator as defined in claim 2 wherein the modulator further comprises
a wirebond disposed in series with the termination resistor, the wirebond having an inductance selected to provide enhancement of the modulator gain at the Nyquist frequency of the electrical input RF modulating signal.

4. The electro-absorption optical modulator of claim 1 wherein the modulator further comprises
a de-Q-ing resistor coupled between the conductive layer and an off-chip capacitor, minimizing creation of a resonant frequency within the resistive RF signal termination path.

5. The electro-absorption optical modulator of claim 1 wherein a DC voltage source is coupled to the conductive layer, the DC voltage source providing a reverse bias DC voltage for operating the electro-absorption modulating device.

6. The electro-absorption optical modulator of claim 5 wherein the modulator further comprises a bias-T input network coupled to both the DC voltage source and the electrical input modulating signal source, coupling both inputs to the stripline conductor.

7. The electro-absorption optical modulator of claim 1 wherein the substrate comprises n-type InP, the active layer an MQW structure of quaternary materials, and the optical waveguiding layer comprises p-type InP.

8. The electro-absorption optical modulator as defined in claim 7 wherein the MQW comprises a structure formed of either one of InGaAsP and InGaAlAs crystal alloys.

9. An electro-absorption modulated laser comprising
a laser diode source biased to emit a CW optical beam; and
an electro-absorption optical modulator chip including
a substrate of a first conductivity type, the substrate defined as comprising a top major surface;
an electro-absorption modulating device formed along a longitudinal extent of the substrate, the electro-absorption modulating device including an active layer and an optical waveguiding layer of a second conductivity type disposed over the active layer, the optical waveguiding layer configured to receive the continuous wave (CW) optical beam from the laser diode source and generate an optically modulated output signal therefrom;
a dielectric layer disposed on a portion of the top major surface of the substrate at a spaced-apart location separate from the electro-absorption modulating device;
a conductive layer disposed over the dielectric layer, wherein the combination of the substrate, the dielectric layer and the conductive layer form a distributed capacitance within the electro-absorption optical modulator chip;
a stripline conductor disposed over an extended portion of the optical waveguiding layer;
an RF signal input path coupled to the stripline conductor for providing an electrical input RF modulating signal to the electro-absorption modulating device; and
a resistive RF signal termination path coupled between the stripline conductor and the conductive layer, the conductive layer providing an AC ground termination for the electrical input RF modulating signal of the electro-absorption modulated laser.

10. The electro-absorption modulated laser as defined in claim 9 wherein the laser diode source is formed on the substrate in optical alignment with the electro-absorption modulating device.

Assignees

• Ii Vi Delaware Inc

Inventors

• Kaikkonen Andrei
• Adams David
• Lewen Robert
• Chitica Nicolae

Classifications

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• H01S5/0601

  comprising an absorbing region (H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026) · CPC title

• G02F1/0157

  using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE] · CPC title

• G02F2202/101

  Ga×As and alloy · CPC title

• G02F2202/102

  In×P and alloy · CPC title