Glass and melt solder for the passivation of semiconductor components

Patent metadata

Field	Value
Publication number	US-11926565-B2
Application number	US-202318187384-A
Country	US
Kind code	B2
Filing date	Mar 21, 2023
Priority date	Mar 13, 2020
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

First claim

What is claimed is:

1. A glass powder comprising the following constituents in % by mole:

SiO 2
15.0 to
30.0

Al 2 O 3
0.0 to
8.0

B 2 O 3
14.0 to
25.0

ZnO
43.0 to
65.0

MgO
0.0 to
8.0

wherein the glass powder has a particle size distribution that is characterized by a spread (d90−d10)/d50 of at least 1.80 and at most 6.00,
wherein the glass powder has a mean particle size d50 of 1.0 μm to 10.0 μm,
wherein the volume portion of particles with sizes below 1.0 μm is limited to at most 30% by volume of the glass, and
wherein the sum of the contents of SiO 2 and ZnO in the glass is at least 73.0% by mole.

2. The glass powder according to claim 1 , wherein the glass powder has an average thermal expansion which in a temperature range of 300° C. to Tg−20° C. does not differ from the average thermal expansion of polycrystalline silicon by more than 0.90 ppm/K, wherein Tg is the glass-transition temperature of the glass and the thermal expansion is measured at a test specimen of 5×5×50 mm after melting the glass at a temperature of 700 to 750° C.

3. The glass powder according to claim 1 , wherein the glass powder has a glass-transition temperature Tg of at least 550° C.

4. The glass powder according to claim 1 , wherein the glass powder displays an etching rate of less than 20.0 μm/min in a 20% HNO 3 solution and/or less than 15.0 μm/min in a 5% HF solution at 20° C.

5. The glass powder according to claim 1 , comprising Na, K, Li, Cs, Rb, Cu, Hg, Cd, Cr and/or Fe in a portion of at most 100 ppm.

6. The glass powder according to claim 1 , comprising less than 1.0% by mole of Bi 2 O 3 , less than 100 ppm of PbO, less than 50 ppm of As 2 O 3 and/or less than 50 ppm of Sb 2 O 3 .

7. A semiconductor component comprising a passivation layer made of a glass powder according to claim 1 .

8. The glass powder according to claim 1 , wherein the content of Al 2 O 3 is at most 3.0% by mole.

9. The glass powder according to claim 1 , wherein the amount of BaO is less than 100 ppm, and wherein the amount of CaO is less than 100 ppm.

10. A glass powder comprising the following constituents in % by mole:

SiO 2
15.0 to
30.0

Al 2 O 3
0.0 to
3.0

B 2 O 3
14.0 to
25.0

ZnO
40.0 to
65.0

MgO
0.0 to
8.0

wherein the glass powder has a particle size distribution that is characterized by a spread (d90−d10)/d50 of at least 1.80 and at most 6.00,
wherein the glass powder has a mean particle size d50 of 1.0 μm to 10.0 μm, and
wherein the volume portion of particles with sizes below 1.0 μm is limited to at most 30% by volume of the glass.

11. The glass powder according to claim 10 , wherein the glass powder has an average thermal expansion which in a temperature range of 300° C. to Tg−20° C. does not differ from the average thermal expansion of polycrystalline silicon by more than 0.90 ppm/K, wherein Tg is the glass-transition temperature of the glass and the thermal expansion is measured at a test specimen of 5×5×50 mm after melting the glass at a temperature of 700 to 750° C.

12. The glass powder according to claim 10 , wherein the glass powder has a glass-transition temperature Tg of at least 550° C.

13. The glass powder according to claim 10 , wherein the glass powder displays an etching rate of less than 20.0 μm/min in a 20% HNO 3 solution and/or less than 15.0 μm/min in a 5% HF solution at 20° C.

14. The glass powder according to claim 10 , comprising Na, K, Li, Cs, Rb, Cu, Hg, Cd, Cr and/or Fe in a portion of at most 100 ppm.

15. The glass powder according to claim 10 , comprising less than 1.0% by mole of Bi 2 O 3 , less than 100 ppm of PbO, less than 50 ppm of As 2 O 3 and/or less than 50 ppm of Sb 2 O 3 .

16. A semiconductor component comprising a passivation layer made of a glass powder according to claim 10 .

Assignees

• Schott Ag

Inventors

• Bartelt Linda Johanna
• Trizzino Antonio
• Gold Julia
• Pichler-Wilhelm Sabine
• Letz Martin
• Hovhannisyan Martun

Classifications

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/43 Primary

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• C03C8/14 Primary

  Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions · CPC title

• C03C3/093

  containing zinc or zirconium · CPC title