Crystallized glass substrate

US11926559B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11926559-B2
Application numberUS-202318154042-A
CountryUS
Kind codeB2
Filing dateJan 13, 2023
Priority dateAug 9, 2018
Publication dateMar 12, 2024
Grant dateMar 12, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOL zero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 μm, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOL zero , which is a product of the compressive stress CS on the outermost surface and the stress depth DOL zero (μm), is 4.8×10 4 or more.

First claim

Opening claim text (preview).

What is claimed is: 1. A crystallized glass substrate including a surface with a compressive stress layer, wherein a stress depth DOL zero of the compressive stress layer is 45 to 200 μm, the stress depth DOL zero being a depth at which the compressive stress is 0 MPa, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, CS×DOL zero , which is a product of the compressive stress CS on the outermost surface and the stress depth DOL zero (μm), is 4.8×10 4 or more, and the crystallized glass substrate comprises, by wt % in terms of oxide: 5.0% or more of a Na 2 O component; and 2.0% or more of a TiO 2 component. 2. The crystallized glass substrate according to claim 1 , wherein a sum of the stress depths from both surfaces of the crystallized glass substrate, 2×DOL zero , is 10 to 80% of a thickness T of the crystallized glass substrate. 3. The crystallized glass substrate according to claim 1 , comprising: by wt % in terms of oxide, 40.0% to 70.0% of a SiO 2 component; 11.0% to 25.0% of an Al 2 O 3 component; 5.0% to 19.0% of a Na 2 O component; 0% to 9.0% of a K 2 O component; 1.0% to 18.0% of one or more selected from a MgO component and a ZnO component; 0% to 3.0% of a CaO component; and 2.0% to 12.0% of a TiO 2 component. 4. The crystallized glass substrate according to claim 1 , wherein a thickness T of the crystallized glass substrate is 0.1 to 1.0 mm. 5. The crystallized glass substrate according to claim 1 , wherein E/ρ, which is a ratio of Young's modulus E(GPa) to a specific gravity ρ, is 31 or more. 6. The crystallized glass substrate according to claim 1 , wherein a sum of the compressive stress CS on the outermost surface and a central stress CT determined by curve analysis is 600 to 1400 MPa. 7. The crystallized glass substrate according to claim 1 , wherein the stress depth DOL zero is 70 to 110 μm, the compressive stress CS of the outermost surface is 550 to 890 MPa, the central stress CT is 100 to 250 MPa, and a sum of the compressive stress CS on the outermost surface and the central stress CT is 800 to 1200 MPa. 8. The crystallized glass substrate according to claim 1 , wherein the stress depth DOL zero is 65 to 85 μm, the compressive stress CS on the outermost surface is 700 to 860 MPa, the central stress CT is 120 to 240 MPa, and a thickness T of the crystallized glass substrate is 0.15 to 0.7 mm.

Assignees

Inventors

Classifications

  • C03C21/002Primary

    to perform ion-exchange between alkali ions (C03C21/005 takes precedence) · CPC title

  • for ion-sensitive glass · CPC title

  • containing SiO2, Al2O3 and monovalent metal oxide as main constituents · CPC title

  • Glasses, glazes or enamels with special properties · CPC title

  • C03C3/085Primary

    containing an oxide of a divalent metal · CPC title

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What does patent US11926559B2 cover?
To provide a crystallized glass substrate including a surface with a compressive stress layer, in which a stress depth DOL zero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 μm, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and CS×DOL zero , which is a product of the compressive stress CS on the out…
Who is the assignee on this patent?
Ohara Kk
What technology area does this patent fall under?
Primary CPC classification C03C21/002. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 12 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).