Conductive structure, manufacturing method therefor, and electrode comprising conductive structure

Patent metadata

Field	Value
Publication number	US-11926558-B2
Application number	US-201615559742-A
Country	US
Kind code	B2
Filing date	Mar 28, 2016
Priority date	Mar 27, 2015
Publication date	Mar 12, 2024
Grant date	Mar 12, 2024

Abstract

The present specification relates to a conductive structure body, a method for manufacturing the same, and an electrode and an electronic device including the conductive structure body.

First claim

The invention claimed is:

1. A conductive structure body, comprising:
a substrate;
a metal layer provided on the substrate; and
a light reflection reducing layer provided on at least one surface of the metal layer,
wherein the light reflection reducing layer consists of MoTi a O x N y (0<a≤2, 0<x≤3, 0<y≤2, x+y>0, and a, x and y mean ratios of the number of atoms of Ti, O and N, respectively), and
wherein the light reflection reducing layer has an element content of O and N that satisfy 0<N at % /O at % ≤0.02,
wherein the element content of O of the light reflection reducing layer is 42,5 at % or more and less than 53.9 at %,
wherein the element content of Mo of the light reflection reducing layer is 28.6 at % or more and 33.2 at %,
wherein the element content of Ti of the light reflection reducing layer is 12.7 at % or more and 14.5 at % or less, and
wherein the element content of N of the light reflection reducing layer is 1.3 at % or more and 4.6 at % or less.

2. The conductive structure body of claim 1 , wherein the light reflection reducing layer is provided between the metal layer and the substrate, and total reflectance measured in an opposite direction to a surface with the light reflection reducing layer of the substrate is 35% or less.

3. The conductive structure body of claim 1 , wherein the substrate, the metal layer, and the light reflection reducing layer are sequentially provided and total reflectance measured in an opposite direction to a surface with the metal layer of the light reflection reducing layer is 35% or less.

4. The conductive structure body of claim 1 , wherein the light reflection reducing layers are provided on an upper surface and a lower surface of the metal layer.

5. The conductive structure body of claim 1 , wherein a thickness of the light reflection reducing layer is 10 nm or more and 400 nm or less.

6. The conductive structure body of claim 1 , wherein a mean extinction coefficient k in a visible light area of the conductive structure body is 0.1 to 15.

7. The conductive structure body of claim 1 , wherein a mean refractive index in a visible light area of the conductive structure body is 2 to 3.

8. The conductive structure body of claim 1 , wherein the metal layer and the light reflection reducing layer include a metal pattern layer and a light reflection reducing pattern layer including a plurality of apertures, respectively.

9. The conductive structure body of claim 8 , wherein line widths of the metal pattern layer and the light reflection reducing pattern layer are 0.1 μm or more and 100 μm or less.

10. The conductive structure body of claim 8 , wherein a line gap between adjacent pattern lines of the metal pattern layer and the light reflection reducing pattern layer is 0.1 μm or more and 100 μm or less.

11. The conductive structure body of claim 8 , wherein the line width of the light reflection reducing pattern layer is 80% or more and 120% or less of the line width of the metal pattern layer.

12. A method for manufacturing the conductive structure body of claim 1 , the method comprising:
preparing a substrate;
forming a metal layer on the substrate, and
forming a light reflection reducing layer on the metal layer,
wherein the light reflection reducing layer consists of MoTi a O x N y (0<a≤2, 0<x≤3, 0<y≤2, x+y>0, and a, x and y mean ratios of the number of atoms of Ti, O and N, respectively), and
wherein the light reflection reducing layer has an element content of O and N that satisfy 0<N at % /O at % ≤0.02,
wherein the element content of O of the light reflection reducing layer is 42,5 at % or more and less than 53.9 at %,
wherein the element content of Mo of the light reflection reducing layer is 28.6 at % or more and 33.2 at %,
wherein the element content of Ti of the light reflection reducing layer is 12.7 at % or more and 14.5 at % or less, and
wherein the element content of N of the light reflection reducing layer is 1.3 at % or more and 4.6 at % or less.

13. The method of claim 12 , wherein the forming of the light reflection reducing layer uses a sputtering method in which partial pressure of oxygen gas and partial pressure of nitrogen gas satisfy Equation 2 below.

0
≤

N

2
sccm

O

2
sccm

<
10

[

Equation
⁢

2

]

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14. An electrode including the conductive structure body of claim 1 .

15. An electronic device including the conductive structure body of any claim 1 .

Assignees

• Lg Chemical Ltd

Inventors

• Lee Ilha
• Lee Seung Heon
• Jang Song Ho
• Oh Dong Hyun
• Hwang Ji Young
• Kim Ki-Hwan
• Seo Han Min
• Park Chan Hyoung
• Park Sun Young

Classifications

• H10K59/8791

  Arrangements for improving contrast, e.g. preventing reflection of ambient light · CPC title

• H10K59/805

  Electrodes · CPC title

• C03C17/36 Primary

  at least one coating being a metal · CPC title

• B32B3/266

  characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12 · CPC title

• B32B9/04

  comprising such {particular} substance as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)} · CPC title