High q modified barium magnesium tantalate for high frequency applications
US-2019300378-A1 · Oct 3, 2019 · US
US11926533B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11926533-B2 |
| Application number | US-202217671450-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2022 |
| Priority date | May 31, 2016 |
| Publication date | Mar 12, 2024 |
| Grant date | Mar 12, 2024 |
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Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba3NiTa2O9 and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the Ba3NiTa2O9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.
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What is claimed is: 1. A method of making a high Q material comprising: providing Ba 3 NiTa 2 O 9 ; and incorporating one of Ba 2 MgWO 6 , Ba 8 LiTa 5 WO 24 , Ba 3 LaTa 3 O 12 , BaLaLiWO 6 , Ba 4 Ta 2 WO 12 , Ba 2 La 2 MgW 2 O 12 , Sr 3 LaTa 3 O 12 , and SrLaTaO 12 into the Ba 3 NiTa 2 O 9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz. 2. The method of claim 1 wherein the solid solution does not include tin. 3. The method of claim 1 wherein the solid solution contains at least 95% Ba 3 NiTa 2 O 9 . 4. The method of claim 1 wherein the solid solution contains at least 97% Ba 3 NiTa 2 O 9 . 5. The method of claim 1 wherein the solid solution has a dielectric constant of at least 25. 6. The method of claim 1 further comprising incorporating MgTa2O6 into the Ba 3 NiTa 2 O 9 . 7. The method of claim 1 wherein the solid solution has a Q value of greater than 17000 at about 10 GHz. 8. The method of claim 1 further comprising incorporating the solid solution into a cellular base station. 9. The method of claim 1 further comprising incorporating the solid solution into a millimeter wave filter. 10. The method of claim 1 further comprising incorporating the solid solution into a collision avoidance system. 11. The method of claim 1 further comprising incorporating the solid solution into a resonator or isolator. 12. A method of making a composite material, the method comprising: providing Ba 3 NiTa 2 O 9 ; and incorporating one of Ba 2 MgWO 6 , Ba 8 LiTa 5 WO 24 , Ba 3 LaTa 3 O 12 , BaLaLiWO 6 , Ba 4 Ta 2 WO 12 , Ba 2 La 2 MgW 2 O 12 , Sr 3 LaTa 3 O 12 , and SrLaTaO 12 into the Ba 3 NiTa 2 O 9 to form a composite material having a high Q value of greater than 12000 at about 10 GHz. 13. The method of claim 12 wherein the composite material does not include tin. 14. The method of claim 12 wherein the composite material contains at least 95% Ba 3 NiTa 2 O 9 . 15. The method of claim 12 wherein the composite material contains at least 97% Ba 3 NiTa 2 O 9 . 16. The method of claim 12 wherein the composite material has a dielectric constant of at least 25. 17. The method of claim 12 further comprising incorporating MgTa2O6 into the composite material. 18. The method of claim 12 wherein the composite material has a Q value of greater than 17000 at about 10 GHz. 19. The method of claim 12 further comprising incorporating the composite material into a cellular base station. 20. The method of claim 12 further comprising incorporating the composite material into a resonator or isolator.
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