Optical-sensing device, manufacturing method thereof, and display panel

Patent metadata

Field	Value
Publication number	US-11925039-B2
Application number	US-202016972627-A
Country	US
Kind code	B2
Filing date	Nov 17, 2020
Priority date	Sep 7, 2020
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

First claim

What is claimed is:

1. An optical-sensing device, comprising:
a substrate;
a sensor thin film transistor (TFT) disposed on the substrate, the sensor TFT comprising a first active layer; and
a switch TFT disposed on the substrate and connected with the sensor TFT, the switch TFT comprising a second active layer;
wherein the first active layer comprises a first indium gallium zinc oxide (IGZO) layer, a perovskite layer disposed on the first IGZO layer, and a first graphene layer disposed on the first IGZO layer; and the second active layer comprises a second IGZO layer.

2. The optical-sensing device in claim 1 , wherein the second active layer further comprises a second graphene layer disposed on the second IGZO layer.

3. The optical-sensing device in claim 1 , wherein the sensor TFT comprises:
a first bottom gate electrode disposed on the substrate;
an insulating layer covering the first bottom gate electrode;
the first active layer disposed on the insulating layer;
a first source electrode and a first drain electrode disposed on the insulating layer and connected with two ends of the first active layer; and
a planarization layer covering the first active layer, the first source electrode, and the first drain electrode.

4. The optical-sensing device in claim 3 , wherein the switch TFT comprises:
a second bottom gate electrode disposed on the substrate;
the insulating layer covering the second bottom gate electrode;
the second active layer disposed on the insulating layer;
a second source electrode and a second drain electrode disposed on the insulating layer and connected with two ends of the second active layer; and
the planarization layer covering the second active layer, the second source electrode, and the second drain electrode;
wherein the second source electrode connects with the first drain electrode.

5. The optical-sensing device in claim 3 , wherein the sensor TFT further comprises a first top gate electrode disposed on the planarization layer and corresponding to the first active layer.

6. The optical-sensing device in claim 1 , further comprising a storage capacitance structure disposed on the substrate, wherein the storage capacitance structure is electrically connected with the sensor TFT and/or the switch TFT.

7. A display panel, comprising a liquid crystal display panel and an optical-sensing device disposed on the liquid crystal display panel, the optical-sensing device comprising:
a substrate;
a sensor TFT, disposed on the substrate and comprising a first active layer; and
a switch TFT, disposed on the substrate, connected with the sensor TFT, and comprising a second active layer;
wherein the first active layer comprises a first indium gallium zinc oxide (IGZO) layer, a perovskite layer disposed on the first IGZO layer, and a first graphene layer disposed on the first IGZO layer; and the second active layer comprises a second IGZO layer.

8. The display panel in claim 7 , wherein the second active layer further comprises a second graphene layer disposed on the second IGZO layer.

9. The display panel in claim 7 , wherein the sensor TFT comprises:
a first bottom gate electrode disposed on the substrate;
an insulating layer covering the first bottom gate electrode;
the first active layer disposed on the insulating layer;
a first source electrode and a first drain electrode disposed on the insulating layer and connected with two ends of the first active layer; and
a planarization layer covering the first active layer, the first source electrode, and the first drain electrode.

10. The display panel in claim 9 , wherein the switch TFT comprises:
a second bottom gate electrode disposed on the substrate;
the insulating layer covering the second bottom gate electrode;
the second active layer disposed on the insulating layer;
a second source electrode and a second drain electrode disposed on the insulating layer and connected with two ends of the second active layer; and
the planarization layer covering the second active layer, the second source electrode, and the second drain electrode;
wherein the second source electrode connects with the first drain electrode.

11. The display panel in claim 9 , wherein the sensor TFT further comprises a first top gate electrode disposed on the planarization layer and corresponding to the first active layer.

12. The display panel in claim 7 , further comprising a storage capacitance structure disposed on the substrate, wherein the storage capacitance structure is electrically connected with the sensor TFT and/or the switch TFT.

13. An optical-sensing device, comprising:
a substrate;
a sensor thin film transistor (TFT) disposed on the substrate, the sensor TFT comprising a first active layer; and
a switch TFT disposed on the substrate and connected with the sensor TFT, the switch TFT comprising a second active layer;
wherein the first active layer comprises a first indium gallium zinc oxide (IGZO) layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer and a second graphene layer disposed on the second IGZO layer.

14. The optical-sensing device in claim 13 , wherein the sensor TFT comprises:
a first bottom gate electrode disposed on the substrate;
an insulating layer covering the first bottom gate electrode;
the first active layer disposed on the insulating layer;
a first source electrode and a first drain electrode disposed on the insulating layer and connected with two ends of the first active layer; and
a planarization layer covering the first active layer, the first source electrode, and the first drain electrode.

15. The optical-sensing device in claim 14 , wherein the switch TFT comprises:
a second bottom gate electrode disposed on the substrate;
the insulating layer covering the second bottom gate electrode;
the second active layer disposed on the insulating layer;
a second source electrode and a second drain electrode disposed on the insulating layer and connected with two ends of the second active layer; and
the planarization layer covering the second active layer, the second source electrode, and the second drain electrode;
wherein the second source electrode connects with the first drain electrode.

16. The optical-sensing device in claim 14 , wherein the sensor TFT further comprises a first top gate electrode disposed on the planarization layer and corresponding to the first active layer.

17. The optical-sensing device in claim 13 , further comprising a storage capacitance structure disposed on the substrate, wherein the storage capacitance structure is electrically connected with the sensor TFT and/or the switch TFT.

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Wang Haijun

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K39/30 Primary

  Devices controlled by radiation · CPC title

• G02F1/13338 Primary

  Input devices, e.g. touch panels · CPC title

• H10F39/107

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

• G02F1/13312

  Circuits comprising photodetectors for purposes other than feedback · CPC title