Optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-11923660-B2
Application number	US-201916973452-A
Country	US
Kind code	B2
Filing date	Jun 6, 2019
Priority date	Jun 11, 2018
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

First claim

The invention claimed is:

1. An optoelectronic semiconductor component comprising a primary light source and a secondary light source, wherein
the primary light source and the secondary light source are monolithically integrated in the semiconductor component so that there is exclusively condensed matter between them so that there is neither an air gap nor a free beam path between the primary light source and the secondary light source;
the primary light source comprises a first resonator which contains a semiconductor layer sequence which is electrically pumped during operation;
a first resonator axis of the first resonator is oriented parallel to a growth direction of the semiconductor layer sequence;
the primary light source is configured to generate a pump laser radiation;
the secondary light source comprises at least one pump medium for generating a secondary radiation and the pump medium is optically pumped by the pump laser radiation; and
the first resonator axis points past the pump medium.

2. The optoelectronic semiconductor component according to claim 1 ,
in which the pump laser radiation is guided only along the resonator axis and resonator end surfaces of the first resonator are opaque to the pump laser radiation,
wherein the optical pumping of the pump medium is performed in a direction perpendicular to the first resonator axis by means of an evanescent field of the pump laser radiation, and
wherein the pump laser radiation does substantially not leave the semiconductor component.

3. The optoelectronic semiconductor component according to claim 1 ,
in which the secondary light source comprises a second resonator in which the pump medium is located,
wherein the secondary radiation is a laser radiation, and
wherein a laser mode of the pump laser radiation overlaps with a laser mode of the secondary radiation.

4. The optoelectronic semiconductor component according to claim 3 ,
in which the second resonator comprises a second resonator axis which is aligned parallel to the first resonator axis with a tolerance of at most 10°.

5. The optoelectronic semiconductor component according to claim 4 ,
in which the first resonator and the second resonator are jointly bounded by at least one Bragg mirror along the first and second resonator axes,
wherein the at least one Bragg mirror is highly reflective for the pump laser radiation and transmissive for the secondary radiation.

6. The optoelectronic semiconductor component according to claim 5 ,
in which the at least one Bragg mirror at at least one resonator end is the only resonator end mirror for both resonators.

7. The optoelectronic semiconductor component according to claim 3 ,
in which the second resonator comprises a second resonator axis which is aligned perpendicular to the first resonator axis with a tolerance of at most 30°,
wherein the secondary light source is designed as an edge-emitting laser.

8. The optoelectronic semiconductor component according to claim 7 ,
in which the pump medium is arranged in an intensity maximum of the pump laser radiation along the first resonator axis.

9. The optoelectronic semiconductor component according to claim 1 ,
in which the first resonator surrounds the pump medium on at least two sides, seen in plan view of the first resonator parallel to the first resonator axis.

10. The optoelectronic semiconductor component according to claim 9 ,
in which the pump medium is surrounded all around by the first resonator when viewed in plan view parallel to the first resonator axis.

11. The optoelectronic semiconductor component according to claim 1 ,
in which for the pump laser radiation a refractive index of the pump medium is at least as large as a refractive index of the semiconductor layer sequence.

12. The optoelectronic semiconductor component according to claim 1 ,
in which a connection layer is located between the primary light source and the secondary light source,
wherein the connection layer has a lower reflectivity for the pump laser radiation than for the secondary radiation and/or the connection layer divides a refractive index jump between the first resonator and the pump medium into two smaller refractive index jumps.

13. The optoelectronic semiconductor component according to claim 1 ,
in which the pump medium is provided with a coating layer reflecting the pump laser radiation and/or the secondary radiation on all sides facing away from the primary light source in a direction transverse to a main emission direction of the secondary radiation.

14. The optoelectronic semiconductor component according to claim 1 ,
comprising a plurality of said primary light sources configured for common optical pumping of said secondary light source.

15. The optoelectronic semiconductor component according to claim 14 ,
in which the primary light sources are stacked on top of each other,
wherein the primary light sources are optically decoupled from each other in a direction parallel to the first resonator axes.

16. The optoelectronic semiconductor component according to claim 1 ,
comprising a plurality of said secondary light sources which are commonly optically pumped by the one or from one of said primary light sources during operation.

17. The optoelectronic semiconductor component according to claim 1 ,
in which the pump medium is partially or completely integrated in a growth substrate of the semiconductor layer sequence.

18. An optoelectronic semiconductor component comprising a primary light source and a secondary light source, wherein
the primary light source and the secondary light source are monolithically integrated in the semiconductor component so that there is exclusively condensed matter between them so that there is neither an air gap nor a free beam path between the primary light source and the secondary light source;
the primary light source comprises a first resonator which contains a semiconductor layer sequence which is electrically pumped during operation;
a first resonator axis of the first resonator is oriented parallel to a growth direction of the semiconductor layer sequence;
the primary light source is configured to generate a pump laser radiation;
the secondary light source comprises at least one pump medium for generating a secondary radiation and the pump medium is optically pumped by the pump laser radiation;
the first resonator axis points past the pump medium; and
the pump laser radiation is guided only along the resonator axis and resonator end surfaces of the first resonator are opaque to the pump laser radiation.

19. An optoelectronic semiconductor component comprising:
a primary light source and a secondary light source, wherein
the primary light source and the secondary light source are monolithically integrated in the semiconductor component so that there is exclusively condensed matter between them,
the primary light source comprises a first resonator which contains a semiconductor layer sequence which is electrically pumped during operation,
a first resonator axis of the first resonator is oriented parallel to a growth direction of the semiconductor layer sequence,
the primary light source is configured to generate a pump laser radiation,
the secondary light source comprises at least one pump medium for generating a secondary radiation and the pump medium is optically pumped by the pump laser radiation, and
the first resonator axis points past the pump medium; and

a plurality of said primary light sources and a plurality of said se

Assignees

• Osram Oled Gmbh

Inventors

• Stojetz Bernhard
• Eichler Christoph
• Lell Alfred
• Gerhard Sven

Classifications

• H01S5/18308 Primary

  having a special structure for lateral current or light confinement · CPC title

• H01S5/041 Primary

  Optical pumping · CPC title

• H01S5/18361

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title