Semiconductor device including a bidirectional switch

Patent metadata

Field	Value
Publication number	US-11923276-B2
Application number	US-202318110144-A
Country	US
Kind code	B2
Filing date	Feb 15, 2023
Priority date	Nov 29, 2016
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

A semiconductor includes a carrier; a semiconductor element arranged on the carrier; a first row of terminals arranged along a first side face of the carrier; a second row of terminals arranged along a second side face of the carrier opposite the first side face; and an encapsulation body encapsulating the semiconductor element, wherein the semiconductor element comprises a first transistor structure and a second transistor structure, wherein the first row of terminals comprises a first gate terminal, a first sensing terminal coupled, and a first power terminal, wherein the second row of terminals, a second sensing terminal, and a second power terminal.

First claim

What is claimed is:

1. A semiconductor device forming a bidirectional switch, the semiconductor device comprising:
a carrier;
a semiconductor element arranged on the carrier;
a first row of terminals arranged along a first side face of the carrier;
a second row of terminals arranged along a second side face of the carrier opposite the first side face; and
an encapsulation body encapsulating the semiconductor element,
wherein the semiconductor element comprises a first transistor structure and a second transistor structure, the first transistor structure and a second transistor structure each comprising a gate electrode, and a first power electrode,
wherein the first row of terminals comprises a first gate terminal coupled with the gate electrode of the first transistor structure, a first sensing terminal independently connected with the first power electrode of the first transistor structure, and a first power terminal of the bidirectional switch coupled with the first power electrode of the first transistor structure,
wherein the second row of terminals comprises a second gate terminal coupled with the gate electrode of the second transistor structure, a second sensing terminal independently connected with the first power electrode of the second transistor structure, and a second power terminal of the bidirectional switch coupled with the first power electrode of the second transistor structure.

2. The semiconductor device of claim 1 , wherein the semiconductor element comprises a III-V semiconductor.

3. The semiconductor device of claim 2 , wherein the III-V semiconductor is GaN.

4. The semiconductor device of claim 1 , wherein the first and the second rows of terminals are physically separated from the carrier.

5. The semiconductor device of claim 1 , wherein the first and the second transistor structures comprise a common second power electrode.

6. The semiconductor device of claim 5 , wherein the second power electrode is a drain electrode.

7. The semiconductor device of claim 1 , wherein each of the gate electrode of the first transistor structure, the first power electrode of the first transistor structure, the gate electrode of the second transistor structure, and the first power electrode of the second transistor structure are disposed on a main face of the semiconductor element that is opposite from the carrier.

8. The semiconductor device of claim 7 , wherein the semiconductor element comprises a second power electrode disposed on a lower face of the semiconductor element that faces the carrier, wherein the second power electrode is coupled to the carrier.

9. The semiconductor device of claim 8 , wherein the first power electrode of the first transistor structure and the first power electrode of the second transistor structure are drain electrodes, and wherein the second power electrode is a source electrode.

10. The semiconductor device of claim 8 , wherein the first power electrode of the first transistor structure and the first power electrode of the second transistor structure are source electrodes, and wherein the second power electrode is a drain electrode.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Otremba Ralf
• Schiess Klaus
• Treu Michael

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title